Page 1
Dual Epitaxial Planer Transistor
NPN+PNP Silicon
Features:
* Epitaxial Planar Die Construction
* Ldeal For Low Power Amplification and S witching
Maximum Ratings
2
3
4
5
NPN+PNP
W4413DW
1
6
SOT-363(SC-88)
6
5
4
1
2
3
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board,
T =25 ℃
A
Thermal Resistance from Junction to Ambient
Junction Temperature
(1)
Symbol
V
CEO
V
CBO
V
EBO
l
C
Symbol Max
P
D
R
θJA
T
J
200
625
150
Value
40
-40
60
-40
6.0
-5.0
600
-600
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
℃/
W
℃
Storage Temperature
Device Marking
W4413DW = K13
WEITRON
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Tstg
-55 to +150
℃
07-Jun-20121/4
Page 2
W4413DW
NPN Electrical Characteristics (T
Characteristics
=25 C unless otherwise noted)
A
Symbol
Min
Typ
Max
Off Characteristics
Collector-Emitter Breakdown Voltage
(lC= 1.0mA)
Collector-Base Breakdown Voltage
(lC= 100 µA)
Emitter-Base Breakdown Voltage
(lE= 100µA)
Collector Cutoff Current
(VCB= 50V)
Collector Cutoff Current
(VCE= 35V)
Emitter Cutoff Current
(VEB= 5.0V)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
l
CBO
l
CEO
l
EBO
40
60
6.0
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.5
0.1
On Characteristics
DC Current Gain
(lC= 0.1 mA, VCE= 1.0V) 20 - - (lC= 1.0 mA, VCE= 1.0V) 40 - - -
(lC= 10 mA, VCE= 1.0V) 80 - - (lC= 150 mA, VCE= 1.0V) 100 - -300
(lC= 500 mA, VCE= 2.0V) 40 - - -
h
FE
Unit
V
V
V
µA
µA
µA
Collector-Emitter Saturation Voltage
V
(lC= 150 mA, lB= 15mA)
(lC= 500 mA, lB= 50mA)
CE(sat)
-
-
-
-
0.4
0.75
Base-Emitter Saturation Voltage
V
(lC= 150 mA, lB= 15mA) 0.75 - 0.95
(lC= 500 mA, lB= 50mA)
BE(sat)
1.2--
Small-Signal Characteristics
Current-Gain-Bandwidth Product
(VCE= 10.0 V, l
= 20mA, f = 100MHz)
C
Output Capacitance
(VCB= 5.0V, f = 1.0MHz)
Delay Time
(VCC= 30V, V
BE=2.0V,I
=150mA,I
C
Rise Time
(VCC= 30V, V
BE=2.0V,I
=150mA,I
C B1
Storage Time
(VCC= 30V,
=150mA, I
I
C
= -I =15mA)
B1 B2
Fall Time
(VCC= 30V,
=150mA, I
I
C
= -I =15mA)
B1 B2
B1
=15mA)
=15mA)
f
T
Cob
t
d
t
r
t
s
t
f
250
-
-
-
-
-
-
-
-
-
-
- -
6.5
15 nS
20
225
30
V
V
MHz
P
f
nS
nS
nS
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Page 3
W4413DW
PNP Electrical Characteristics (T
Characteristics
=25 C unless otherwise noted)
A
Symbol
Min
Typ
Max
Off Characteristics
Collector-Emitter Breakdown Voltage
(lC= -1.0mA)
Collector-Base Breakdown Voltage
(lC= -100 µA)
Emitter-Base Breakdown Voltage
(lE= -100µA)
Collector Cutoff Current
(VCB= -50V)
Collector Cutoff Current
(VCE= -35V)
Emitter Cutoff Current
(VEB= -5.0V)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
l
CBO
l
CEO
l
EBO
-40
-40
-5.0
-
-
-
-
-
-
-
-
-
-
-
-
-0.1
-0.5
-0.1
On Characteristics
DC Current Gain
(lC= -0.1 mA, VCE= -1.0V) 30 - - (lC= -1.0 mA, VCE= -1.0V) 60 - - -
(lC= -10 mA, VCE= -1.0V) 100 - - (lC= -150 mA, VCE= -2.0V) 100 - -300
(lC= -500 mA, VCE= -2.0V) 20 - - -
h
FE
Unit
V
V
V
µA
µA
µA
Collector-Emitter Saturation Voltage
V
(lC= -150 mA, lB= -15mA)
(lC= -500 mA, lB= -50mA)
CE(sat)
-
-
-
-
-0.4
-0.75
Base-Emitter Saturation Voltage
V
(lC= -150 mA, lB= -15mA) -0.75 - -0.95
BE(sat)
(lC= -500 mA, lB= -50mA) -1.3--
Small-Signal Characteristics
Current-Gain-Bandwidth Product
(VCE= -10.0 V, I
=-20mA, f = 100MHz)
C
Output Capacitance
(VCB= -10.0V, f = 1.0MHz)
Delay Time
(VCC= -30V, V
BE= -2.0V,I
= -150mA,I
C
Rise Time
(VCC= -30V, V
BE= -2.0V,I
= -150mA,I
C
Storage Time
(VCC= -30V,
= -150mA, I
I
C
= -I = -15mA)
B1 B2
Fall Time
(VCC= -30V,
= -150mA, I
I
C
= -I = -15mA)
B1 B2
= -15mA)
B1
= -15mA)
B1
f
T
Cob
t
d
t
r
t
s
t
f
200
-
-
-
-
-
-
-
-
-
-
- -
8.5
15 nS
20
225
30
V
V
MHz
P
f
nS
nS
nS
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Page 4
W4413DW
SOT-363 Package Outline Dimensions
A
6 5 4
B
C
1 2 3
E
D
H
K
J
L
M
Dim
A
B
C
D
E
H
J
K
L
M
SOT-363
Min
0.10
1.15
2.00
0.65 REF
0.30
1.80
-
0.80
0.25
0.10
Unit:mm
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.10
0.40
0.25
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