Page 1
VUO 30
Three Phase
Rectifier Bridge
V
RSM
VV
900 800 VUO 30-08NO3
1300 1200 VUO 30-12NO3
1500 1400 VUO 30-14NO3
1700 1600 VUO 30-16NO3
1900 1800 VUO 30-18NO3*
* delivery time on request
Symbol Test Conditions Maximum Ratings
I
dAV
I
dAVM
I
FSM
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 450 A2s
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight typ. 50 g
V
RRM
Type
~
~
~
① TC = 85°C, module 37 A
① module 50 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A
VR = 0 t = 8.3 ms (60 Hz), sine 330 A
T
= T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 290 A
t = 10 ms (50 Hz), sine 270 A
VR = 0 t = 8.3 ms (60 Hz), sine 460 A2s
TVJ = T
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 355 A2s
t = 10 ms (50 Hz), sine 365 A2s
-40...+125 °C
125 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 3000 V~
I
£ 1 mA t = 1 s 3600 V~
ISOL
Mounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
I
dA V
V
+
= 37 A
= 800-1800 V
RRM
+
+
~
–
-
Features
●
Package with DCB ceramic base plate
●
Isolation voltage 3600 V~
●
Planar passivated chips
●
Blocking voltage up to 1800 V
●
Low forward voltage drop
●
¼" fast-on terminals
●
UL registered E 72873
Applications
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Rectifier for DC motors field current
Advantages
●
Easy to mount with two screws
●
Space and weight savings
●
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
~
~
-
Symbol Test Conditions Characteristic Values
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a Max. allowable acceleration 50 m/s
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
① for resistive load at bridge output
IXYS reserves the right to change limits, test conditions and dimensions.
VR= V
VR= V
;T
RRM
;T
RRM
= 25°C 0.3 mA
VJ
= T
VJ
VJM
5mA
IF= 150 A; TVJ = 25°C 2.55 V
For power-loss calculations only 0.9 V
11 mW
per diode, DC current 2.4 K/W
per module 0.4 K/W
per diode, DC current 3.0 K/W
per module 0.5 K/W
Creeping distance on surface 10 mm
Creepage distance in air 9.4 mm
© 2000 IXYS All rights reserved
2
Use output terminals in parallel
connection!
1 - 2
Page 2
VUO 30
Fig. 1 Surge overload current
: Crest value, t: duration
I
FSM
Fig. 2 I2t versus time (1-10 ms) Fig. 3 Max. forward current at case
Fig. 4 Power dissipation versus forward current and ambient temperature
temperature
Fig. 5 Transient thermal impedance junction to heatsink per diode
© 2000 IXYS All rights reserved
Constants for Z
iR
calculation:
thJK
(K/W) ti (s)
thi
1 0.489 0.0717
2 0.544 0.1241
3 1.376 0.1214
4 0.6 0.620
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