Page 1
.050" NPN Phototransistors
TO-46 Flat W i n dow Package
PACKAGE DIMENSIONS inch (mm)
VTT1015, 16, 17
CASE 1 TO-46 (FLAT WINDOW)
CHIP TYPE: 50T
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
A large area high sensitivity NPN silicon phototransistor in
a flat lensed, hermetically sealed, TO-46 package. The
hermetic package offers superior protection from hostile
environments. The base connection is brought out
allowing conventional transistor biasing. These devices
are spectrally matched to the VTE10xx series of IREDs.
Max i mum Temperatures
Storage Temperature: -40°C to 110°C
Operating Temperature: -40°C to 110°C
Continuous Power Dissipation: 250 mW
Derate above 30°C: 3.12 mW/°C
Max i mum Curr ent: 200 mA
Lead Soldering Temperature: 260°C
(1.6 mm from case, 5 sec. max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Light Current Dark Current
l
Part Number
mA
Min. Max.
VTT1015 0.4 — 100 (5) 25 20 40 6.0 0.40 5.0 ±35°
VTT1016 1.0 — 100 (5) 25 20 30 6.0 0.40 5.0 ±35°
VTT1017 2.5 — 100 (5) 25 10 20 4.0 0.40 8.0 ±35°
C
fc (mW/cm
V
= 5.0 V
CE
H
2
)
(nA)
Max.
l
CEO
H = 0
V
CE
(Volts)
Collector
Breakdown
V
BR(CEO)
l
= 100 µA
C
H = 0
Volts, Min. Volts, Min. Volts, Max. µsec, Typ. Typ.
Emitter
Breakdown
V
BR(ECO)
lE = 100 µA
H = 0
Saturation
Voltage
V
CE(SAT)
lC = 1.0 mA
H = 400 fc
Rise/Fall Time
tR/t
F
lC = 1.0 mA
R
= 100 Ω
L
Angular
Response θ
1/2
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
102
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