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VTP Process Photodiodes VTP8440
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a re cessed ceramic
CASE 21 8 mm CERAMIC
CHIP ACTIVE AREA: .008 in
ABSOLUTE MAXIMUM RATINGS
2
(5.16 mm2)
package. Ch ip is coated with a protect ive layer
of clear epoxy. These diodes exhibit low dark
current under reverse bias and fast speed of
Storage Temperature: -20°C to 75°C
Operati ng Tem perature: -20°C to 75°C
response.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
SYMBOL CHARACTERISTIC TEST CONDITIONS
I
TC I
V
TC V
R
Re Responsivity 940 nm .025 A/(W/cm
S
λ
range
V
θ
NEP Noise Equivalent Power 1.3 x 10
Short Circuit Current H = 100 fc, 2850 K 30 55 µA
SC
SCISC
OC
OCVOC
I
D
SH
C
J
R
λ
p
BR
1/2
D* Specific Detectivity 1.8 x 10
Temperature Coefficient 2850 K .20 %/°C
Open Circuit Voltage H = 100 fc, 2850 K 350 mV
Temperature Coefficient 2850 K -2.0 mV/°C
Dark Current H = 0, VR = 50 V 15 nA
Shunt Resistance H = 0, V = 10 mV .5 GΩ
Junction Capacitance H = 0, V = 15 V 15 pF
Sensitivity @ Peak .55 A/W
Spectral Application Range 400 1150 nm
Spectral Response - Peak 925 nm
Breakdown Voltage 50 140 V
Angular Resp. - 50% Resp. Pt. ±50 Degrees
Min. Typ. Max.
VTP8440
-13
(Typ.)
12
(Typ.)
UNITS
WHz⁄
cm Hz
2
)
/ W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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