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VTP Process Photodiodes VTP7110
PACKAG E DIMENSIONS inch (mm)
CASE 7 LATERAL
PRODUCT DESCRIPTION
CHIP ACTIVE AREA: .0011 in
2
(0.684 mm2)
Small area plan ar silico n photodi ode in a clea r,
lensed sidelooking package. These diodes
exhibit l ow dark cur rent unde r reverse bias an d
fas t speed of r esponse.
ABSOLUTE MAXIMUM RAT INGS
Storage Temperature: -40°C to 85°C
Operati ng Temperature: -40°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
SYMBOL CHARACTERISTIC TEST CONDITIONS
I
TC I
V
TC V
R
Re Responsivity 940 nm .015 A/(W/cm
S
λ
range
V
θ
NEP Noise Equivalent Power 1.9 x 10
Short Circuit Current H = 100 fc, 2850 K 6 9 µA
SC
SCISC
OC
OCVOC
I
D
SH
C
J
R
λ
p
BR
1/2
D* Specific Detectivity 5.3 x 10
Tem perature Coefficient 2850 K .20 %/°C
Open Circuit Voltage H = 100 fc, 2850 K 350 mV
Temperature Coefficient 2850 K -2.0 mV/°C
Dark Current H = 0, VR = 10 V 35 nA
Shunt Resistance H = 0, V = 10 mV 7 GΩ
Junction Capacitance H = 0, V = 3 V 25 pF
Sensitivity @ Peak .55 A/W
Spectral Application Range 400 1150 nm
Spectral Response - Peak 925 nm
Breakdown Voltage 30 140 V
Angular Resp. - 50% Resp. Pt. ±58 Degrees
Min. Typ. Max.
VTP7110
-13
(Typ.)
11
(Typ.)
UNITS
WHz⁄
cm Hz
2
)
/ W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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