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VTP Process Photodiod es VTP4085, 408 5S
PACKAGE DIMENSIONS inch (mm)
CASE 13 CERAMIC
CHIP ACTIVE AREA: .032 in
PRODUCT DESCRIPTION
2
(21 mm2)
Large area planar silicon mounted on a two lead
ceramic substrate and coated with a layer of
clear epoxy. Low junction capacitance permits
ABSOLUTE MAXIMUM RATINGS
Stor age Temperatur e: -20°C t o 75°C
Operating Tempera t ure: -20°C t o 75°C
fa st response t ime.
ELECTRO-OPTICA L CHARACTERI ST ICS @ 25°C (See also VTP curves, page 46)
SYMBOL CHARACTERISTIC TEST CONDITIONS
I
TC I
I
V
TC V
R
TC R
λ
range
S
Short Circuit Current H = 100 fc, 2850 200 200 µA
SC
SCISC
SC
OC
OCVOC
I
D
SH
SHRSH
C
J
λ
p
Sensitivity @ Peak .55 .55 A/W
R
Temperature Coefficient 2850 K .20 .20 %/°C
Short Circuit Current 100 µW/cm2, 940 nm 11.4 15 11.4 15 µA
Open Circuit Voltage H = 100 fc, 2850 K .33 .33 mV
Temperature Coefficient 2850 K -2.0 -2.0 mV/°C
Dark Current H = 0, VR = 100 V 100 15 50 nA
Shunt Resistance H = 0, V = 10 mV 2.0 4.0 MΩ
Tem peratur e Coefficient H = 0, V = 10 mV -11 -11 %/°C
Junction Capacitance H = 0, V = 0 V .35 .35 nF
Spectral Application Range 400 1100 400 1100 nm
Spectral Response - Peak 925 925 nm
VTP4085 VTP4085S
Min. Typ. Max. Min. Typ. Max.
UNITS
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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