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VTP Process Photodiodes VTP1232
PACKAGE DIMENSIONS inch (mm)
(Also available in infrared transmitting visible
blocking version)
CHIP ACTIVE AREA: .0036 in
CASE 26 T-1¾
2
(2.326 mm2)
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
This photodiode features the largest detection
area available in a clear, endlooking T-1¾
package. Co mbin ed wit h exce ll ent da rk c ur ren t,
it can fulfill the demands of many difficult
applications.
Storage Temperature: -40°C to 100°C
Operating Temper ature: -40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
SYMBOL CHARACTERISTIC TEST CONDITIONS
I
TC I
Re Responsivity 880 nm 0.06 0.076 A/(W/cm
V
TC V
λ
range
S
Short Circuit Current H = 100 fc, 2850 K 100 µA
SC
SCISC
OC
OCVOC
I
D
C
J
λ
p
R
Temperature Coefficient 2850 K 0.20 %/°C
Open Circuit Voltage H = 100 fc, 2850 K .42 mV
Temperature Coefficient 2850 K -2.0 mV/°C
Dark Current H = 0, VR = 10 V 25 nA
Junction Capacitance H = 0, V = 0 V .18 .30 nF
Spectral Application Range 400 1100 nm
Spectral Response - Peak 920 nm
Sensitivity @ Peak 0.60 A/W
Min. Typ. Max.
VTP1232
UNITS
2
)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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