Datasheet VTP1112 Datasheet (PerkinElmer)

VTP Process Photodiodes VTP1112

PACKAGE DIMENSIONS inch (mm)

CASE 19 TO-46 LENSED HERMETIC

CHIP ACTIVE AREA: .0025 in

2

(1.6 mm2)

ABSOLUTE MAXIMUM RATINGS

PRODUCT DESCRIPTION

Small area planar silicon photodiode in a
lensed. dual lead TO-46 package. Cathode is
common to the case. These diodes exhibit l ow
dark cu rrent u nder reverse bia s and fast spee d
of response.

Storage Temperature: -40°C to 110°C
Operating Temper ature: -40°C to 110°C

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)

SYMBOL CHARACTERISTIC TEST CONDITIONS

I

TC I

V

TC V

R

Re Responsivity 940 nm .033 A/(W/cm
S

λ

range

V

θ

NEP Noise Equivalent Power 8. 7 x 10

Short Circuit Current H = 100 fc, 2850 K 30 90 µA

SC

SCISC

OC

OCVOC

I

D
SH

C

J

R

λ

p
BR
1/2

D* Specific Detectivity 1.5 x 10

Temperature Coefficient 2850 K .20 %/°C

Open Circuit Voltage H = 100 fc, 2850 K 350 mV

Temperature Coefficient 2850 K -2.0 mV/°C
Dark Current H = 0, VR = 50 V 7 nA
Shunt Resistance H = 0, V = 10 mV .5 GΩ
Junction Capacitance H = 0, V = 15 V 6 pF

Sensitivity @ Peak .55 A/W
Spectral Application Range 400 1150 nm
Spectral Response - Peak 925 nm
Breakdown Voltage 50 140 V
Angular Resp. - 50% Resp. Pt. ±15 Degrees

Min. Typ. Max.

VTP1112

-14

(Typ.)

12

(Typ.)

UNITS

WHz⁄

cm Hz

2

)

/ W

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto

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