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VTP Process Photodiod es VTP1012
PACKAGE DIMENSIONS inch (mm)
CASE 17 TO-46 HERMETIC
CHIP ACTIVE AREA: .0025 in
2
(1.6 mm2)
PRODUCT DESCRIPTION
Small area planar silico n photodiode in a “flat”
window TO-46 pack ag e. Ca tho de i s co mmon t o
ABSOLUTE MAXIMUM RATINGS
Stor ag e Tempe rat ure: -40°C t o 11 0°C
Operating Tempera ture: -40°C t o 11 0°C
the case. These diodes exhibit low dark current
under reverse bi as and fast speed of response.
ELECTRO-OPTICA L CHARACTERI ST ICS @ 25°C (See also VTP curves, page 46)
SYMBOL CHARACTERISTIC TEST CONDITIONS
I
TC I
V
TC V
R
Re Responsivity 940 nm .011 A/(W/cm
S
λ
range
V
θ
NEP Noise Equivalent Power 8.7 x 10
Short Circuit Current H = 100 fc, 2850 K 10 17 µA
SC
SCISC
OC
OCVOC
I
D
SH
C
J
R
λ
p
BR
1/2
D* Specific Detectivity 1.5 x 10
Temperature Coefficient 2850 K .20 %/°C
Open Circuit Voltage H = 100 fc, 2850 K 350 mV
Temperature Coefficient 2850 K -2.0 mV/°C
Dark Current H = 0, VR = 50 V 7 nA
Shunt Resistance H = 0, V = 10 mV .5 GΩ
Junction Capacitance H = 0, V = 15 V 6 pF
Sensitivity @ Peak .55 A/W
Spectral Application Range 400 1150 nm
Spectral Response - Peak 925 nm
Breakdown Voltage 50 140 V
Angular Resp. - 50% Resp. Pt. ±35 Degrees
Min. Typ. Max.
VTP1012
-14
(Typ.)
12
(Typ.)
UNITS
WHz⁄
cm Hz
2
)
/ W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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