Datasheet VTP100 Datasheet (PerkinElmer)

VTP Process Photodiod es VTP100

PACKAGE DIMENSIONS inch (mm)

CASE 52 FLAT SIDELOOKER

PRODUCT DESCRIPTION

CHIP ACTIVE AREA: .012 in

2

(7.45 mm2)

Planar silicon photodiode in a molded plastic
sidelooker package. The package material is
infrared transmitting (blocking visible light).
These di odes exhibit low dark cur rent and fast

ABSOLUTE MAXIMUM RATINGS

Stor ag e Tempe rat ure: -40°C t o 10 0°C
Operating Tempera t ure: -40°C t o 10 0°C

speed of response.

ELECTRO-OPTICA L CHARACTERI ST ICS @ 25°C (See also VTP curves, page 46)

SYMBOL CHARACTERISTIC TEST CONDITIONS

I

TC I

V

TC V

R

Re Responsivity 940 nm .036 .047 A/(W/cm
S

λ

range

V

θ

NEP Noise Equivalent Power 2.5 x 10

Short Circuit Current H = 100 fc, 2850 K 35 55 µA

SC

SCISC

OC

OCVOC

I

D
SH

C

J

R

λ

p
BR
1/2

D* Specific Detectivity 1.1 x 10

Temperature Coefficient 2850 K .24 %/°C

Open Circuit Voltage H = 100 fc, 2850 K 300 mV

Temperature Coefficient 2850 K -2.0 mV/°C
Dark Current H = 0, VR = 10 V 30 nA
Shunt Resistance H = 0, V = 10 mV .25 GΩ
Junction Capacitance H = 0, V = 3 V 50 pF

Sensitivity @ Peak .50 A/W
Spectral Application Range 725 1150 nm
Spectral Response - Peak 925 nm
Breakdown Voltage 30 140 V
Angular Resp. - 50% Resp. Pt. ±70 Degrees

Min. Typ. Max.

VTP100

-14
13

(Typ.)

(Typ.)

UNITS

WHz⁄

cm Hz

2

)

/ W

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto

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