Page 1
GaAlAs Infrared Emitting Diodes
T-1¾ (5 mm) Pl astic Package — 880 nm
PACKA GE DIMENSIONS inch (mm)
VTE1291-1, 1291-2
DESCRIPTION
CHIP SIZE: .015" x .015"
This narrow beam angle 5 mm plastic packaged emitter contains a double wirebonded, GaAlAs, 880 nm IRED chip. This cost effective
design is well suit ed for dc or high current pulse applications. This devic e i s a UL recogn i zed component for smok e alarm appli cations
(UL file #S3506).
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
CASE 26 T-1¾ (5 mm)
Maximum Temperatures
Storage and Operating: -40°C to 100°C
Continuous Power Dissipation: 200 mW
Derate above 30°C: 2.86 mW/°C
Maximum Continuous Current: 100 mA
Derate above 30°C: 1.43 mA/°C
Peak Forward Current, 10 µs, 100 pps: 2.5 A
T emp. Coefficient of Power Output (T yp .): -.8%/°C
Maximum Reverse Voltage: 5.0V
Maximum Reverse Current @ V
= 5V: 10 µA
R
Peak Wavelength (Typical): 880 nm
Junction Capacitance @ 0V, 1 MHz (Typ.): 23 pF
Response Time @ I
= 20 mA
F
Rise: 1.0 µs Fall: 1.0 µs
Lead Soldering Temperature: 260°C
(1.6 mm from case, 5 seconds max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Output Forward Drop
Irradiance
Part Number
E
e
2
mW/cm
Min. Typ. mm mm Min. Typ. Typ. Max.
VTE1291-1 2.5 3.3 36 6.4 32 20 100 1.5 2.0 ±12°
VTE1291-2 5.0 6.5 36 6.4 65 25 100 1.5 2.0 ±12°
Condition I
distance Diameter mW/sr mW
Radiant
Intensity
e
Total Power
P
O
Test
Current
I
FT
mA
(Pulsed)
V
@ I
Volts
F
FT
Half Power Beam
Angle
θ
1/2
Typ.
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
118
Loading...