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VTB Process Photodiodes VTB6061
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
CASE 15 TO-8 HERMETIC
CHIP ACTIVE AREA: .058 in
2
(37.7 mm2)
Large area planar silicon photodiode in a “flat”
window, dual lead TO-8 package. Cathode is
ABSOLUTE MAXIMUM RATINGS
common to the case. These diodes have very
high shunt resistance and have good blue
response.
Storage Temperature: -40°C to 110°C
Operating Temper ature: -40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL CHARACT ER I ST IC TEST COND I TI ONS
I
TC I
V
TC V
R
TC R
S
λ
range
V
θ
NEP Noise Equivalent Power 5.7 x 10
Short Circuit Current H = 100 fc, 2850 K 260 350 µA
SC
SCISC
OC
OCVOC
I
D
SH
SHRSH
C
J
R
λ
p
BR
1/2
D* Specific Detectivit y 1.1 x 10
Tem perature Coefficient 2850 K .12 .23 %/ °C
Open Circuit Voltage H = 100 fc, 2850 K 490 mV
Temperature Coefficient 2850 K -2.0 mV/°C
Dark Current H = 0, VR = 2.0 V 2.0 pA
Shunt Resistance H = 0, V = 10 mV .10 GΩ
Temperat ure Coefficient H = 0, V = 10 mV -8.0 %/°C
Junction Capacitance H = 0, V = 0 8.0 nF
Sensitivity 365 nm 0.1 A/W
Spectral Application Range 320 1100 nm
Spectral Response - Peak 920 nm
Breakdown Voltage 2 40 V
Angular Resp. - 50% Resp. Pt. ±55 Degrees
Min. Typ. Max.
VTB6061
-14
(Typ.)
13
(Typ.)
UNITS
WHz⁄
cm Hz
/ W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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