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VTB Process Photodiodes VTB1112, 1113
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a
CASE 19 TO-46 LENSED HERMETIC
CHIP ACTIVE AREA: .0025 in
ABSOLUTE MAXIMUM RATINGS
2
(1.60 mm2)
lensed, dual lead TO-46 package. Cathode is
common to the case. These diodes have very
high shunt resistance and have good blue
Storage Temperature: -40°C to 110°C
Operating Temper ature: -40°C to 110°C
response.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL CHARACTERISTIC TEST CONDITIONS
I
TC I
V
TC V
R
TC R
S
λ
range
V
θ
NEP Noise Equivalent Power 3.0 x 10
Short Circuit Current H = 100 fc, 2850 K 30 60 30 60 µA
SC
SCISC
OC
OCVOC
I
D
SH
SHRSH
C
J
R
λ
p
BR
1/2
D* Specific Detectivit y 4.2 x 10
Tem perature Coefficient 2850 K .12 .23 .12 .23 %/°C
Open Circuit Voltage H = 100 fc, 2850 K 490 490 mV
Temperature Coefficient 2850 K -2.0 -2.0 mV/°C
Dark Current H = 0, VR = 2.0 V 100 20 pA
Shunt Resistance H = 0, V = 10 mV .25 7.0 GΩ
Temperat ure Coefficient H = 0, V = 10 mV -8.0 -8.0 %/°C
Junction Capacitance H = 0, V = 0 .31 .31 nF
Sensitivity 365 nm .19 .19 A/W
Spectral Application Range 320 1100 320 1100 nm
Spectral Response - Peak 920 920 nm
Breakdown Voltage 2 40 2 40 V
Angular Resp. - 50% Resp. Pt. ±15 ±15 Degrees
VTB1112 VTB1113
Min. Typ. Max. Min. Typ. Max.
-14
(Typ .) 5.9 x 10
12
(Typ.) 2.1 x 10 13 (Typ.)
-15
(Typ.)
UNITS
WHz⁄
cm Hz
/ W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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