Datasheet VT6T11 Datasheet (ROHM)

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Power management (dual transistors)

VT6T11

zStructure zDimensions (Unit : mm) PNP silicon epitaxial planar transistor

zFeatures

1) Very small package with two transistors.

2) Suitable for current mirror circuits.

zApplications

Current mirror circuits

zPackaging specifications zInternal circuit

Type VT6T11

Package Code Basic ordering

unit (pieces)

Taping

T2R

8000

zAbsolute maximum ratings (Ta=25°C)

Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage

Collector current

Total

Power dissipation

Element

Symbol

V VCEO VEBO −5

ICP P

Junction temperature Storage temperature

∗1

Pw=1mS Single pulse

∗2

Each terminal mounted on a recommended land

CBO −20 V

stg

Limits

−20 V

∗1

−400

150

∗2

120

j 150

−55 to +150 °C

Unit

V mA −200 mA

mW mW

°C

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage

DC current gain DC current gain ratio Transition frequency Output capacitance

CEO

BV BV

CBO

EBO

CBO

EBO

CE(sat)

(Tr1) /

Cob

(Tr2)

−20

−5

−

120

0.9

−

−0.12

−

350

VMT6

Each lead has same dimensions.

(6) (5) (4)

(1) (3)(2)

−

−0.1

−0.30

560

1.1 MHz

−

V V V

µA µA

−

1.2 ± 0.1

0.14

(6) (4)(5)

0.1

0.1 ±

1.2

0.92

(1) (3)(2)

Tr1

0.14

I V V

I V

V V V

0.4

0.8 ± 0.1

Abbreviated symbol : T11

Tr2

= −1mA = −50µA = −50µA

= −20V

= −5V

= −100mA, IB= −10mA

= −2V, IC= −1mA

= −10V, IE=10mA, f=100MHz

= −10V, IE=0A, f=1MHz

0.16

(1) Base (2) Emitter (3) Emitter (4) Collector (5) Collector (5) Base (6) Collector (6) Base

0.1 ±

0.5 ± 0.1

0.2

0 ~ 0.05

0.05

0.13

0.1

0.05

0.2

UNIT : mm

(Tr1) (Tr1) (Tr2) (Tr2) (Tr1) (Tr2) (Tr1) (Tr2)

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2009.06 - Rev.A

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Data Sheet VT6T11

zElectrical characteristics curves

B=1.0mA

-1000

C (mA)

-100

-10

VCE =2V

Ta=125°C

25°C

-55°C

-100

-1

-0.1

COLLECTOR CURRENT : I

-0.01

COLLECTOR CURRENT : IC (mA)

0 -0.2 -0.4 -0.6 -0.8 -1

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE :

-1

Ta=25

°C

IC/I

B = 20/1

IC/I

CE(sat) (V)

B =10/1

-0.1

VOLTAGE : V

COLLECTOR SATURATION

-0.01

CE(sat) (V)

-0.1

VOLTAGE : V

COLLECTOR SATURATION

-0.01

-1 -10 -100 -1000

COLLECTOR CURRENT : IC (mA)

B=0.9mA

-80

-60

-40

-20

0 -1-2-3-4-5

-1

IC/IB= 10/1

Ta=125°C

25°C

-55°C

-1 -10 -100 -1000

COLLECTOR CURRENT : I

B=0.8mA

CE (V)

Ta=25

C (mA)

°C

B=0.7mA

B=0.6mA

B=0.5mA

B=0.4mA

B=0.3mA

IB=0.2mA

B=0.1mA

B=0mA

1000

Ta=125°C

DC CURENT GAIN : h

25°C

-55°C

-0.1 -1 -10 -100 -1000

COLLECTOR CURRENT : I

1000

VCE = 10V

Ta=25

(MHz)

°C

100

TRANSITION FREQUENCY :f

-0.1 -1 -10 -100 -1000

EMITTER CURRENT : I

VCE=2V

C (mA)

E (mA)

100

Cob

Cib (pF)

Cob (pF)

Ta=25

°C

f=1MHz

E=0

C=0

0.1

-0.01 -0.1 -1 -10 -100

COLLECTOR TO BASE VOLTAGE : V

EMITTER TO BASE VOLTAGE : V

Cib

CB (V)

EB(V)

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Notes

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