Datasheet VS-VSKU91-16P Specification

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ADD-A-PAK

AAP Gen 7 (TO-240AA) Power Modules

PRIMARY CHARACTERISTICS

I

T(AV)

Type Modules - thyristor, standard

Package AAP Gen 7 (TO-240AA)

VS-VSKU91.., VS-VSKV91.. Series

Thyristor/Thyristor, 95 A

FEATURES

• High voltage

• Industrial standard package

• Low thermal resistance

• UL approved file E78996

• Designed and qualified for industrial level

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

BENEFITS

• Excellent thermal performances obtained by the usage of

95 A

exposed direct bonded copper substrate

• Up to 1600 V

• High surge capability

• Easy mounting on heatsink

Vishay Semiconductors

MECHANICAL DESCRIPTION

The AAP Gen 7 (TO-240AA), new generation of AAP module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.

ELECTRICAL DESCRIPTION

These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

2

I

t 200 kA2s

V

RRM

T

Stg

T

J

85 °C 95

150

50 Hz 2000

60 Hz 2094

50 Hz 20

60 Hz 18.26

Range 400 to 1600 V

-40 to +125 °C

-40 to +125 °C

A

kA2s

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ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

TYPE NUMBER

VS-VSK.91

V

, MAXIMUM

VOLTAGE

CODE

RRM

REPETITIVE PEAK

REVERSE VOLTAGE

V

04 400 500 400

08 800 900 800

12 1200 1300 1200

16 1600 1700 1600

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current I

Maximum continuous RMS on-state current I

Maximum peak, one-cycle non-repetitive
on-state current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t

Maximum value of threshold voltage V

Maximum value of on-state 
slope resistance

Maximum on-state voltage drop V
Maximum non-repetitive rate of rise of

turned on current

Maximum holding current I

Maximum latching current I

Notes

(1)I2

t for time tx = I2t x t

(2)

Average power = V

(3)

16.7 % x  x IAV < I <  x I

(4)

I >  x I

AV

T(TO)

x

x I

T(AV)

AV

+ rt x (I

T(RMS)

T(AV)

T(RMS)

I

TSM

T(TO)

r

t

dI/dt

2

)

180° conduction, half sine wave,
T

= 85 °C

C

DC 150

T

C

t = 10 ms

t = 8.3 ms 2094

t = 10 ms

t = 8.3 ms 1760

t = 10 ms

t = 8.3 ms 18.26

t = 10 ms

t = 8.3 ms 12.91
t = 0.1 ms to 10 ms, no voltage reapplied 

(1)

T

= TJ maximum

J

Low level

(2)

High level

Low level

(2)

High level

ITM =  x I

TM

= 25 °C, from 0.67 V

T

J

I

=  x I

TM

TJ = 25 °C, anode supply = 6 V,

H

resistive load, gate open circuit

TJ = 25 °C, anode supply = 6 V, resistive load 400

L

No voltage
reapplied

100 % V

RRM



reapplied

No voltage
reapplied

100 % V

RRM



reapplied

(3)

TJ = TJ maximum

(4)

(3)

TJ = TJ maximum

(4)

T(AV)TJ

T(AV)

= 25 °C 1.73 V

,

DRM

, Ig = 500 mA, tr < 0.5 μs, tp > 6 μs

Vishay Semiconductors

V

, MAXIMUM REPETITIVE

DRM

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

Sinusoidal
half wave,
initial T

Initial T

V

= TJ maximum

J

= TJ maximum

J

95

78 °C

2000

1682

20

14.14

200 kA

0.97

1.1

2.76

2.38

150 A/μs

250

I

RRM, IDRM

AT 125 °C

mA

15

A

A

kA2s

2

V

m

mA

s

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TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak gate current I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

TJ = - 40 °C

Maximum gate voltage required to trigger V

GT

T

= 25 °C 2.5

J

T

= 125 °C 1.7

J

Anode supply = 6 V
resistive load

TJ = - 40 °C

Maximum gate current required to trigger I

Maximum gate voltage that will not trigger V

Maximum gate current that will not trigger I

GD

GT

T

TJ = 125 °C, rated V

GD

TJ = 125 °C, rated V

= 25 °C 150

J

= 125 °C 80

J

Anode supply = 6 V
resistive load

applied 0.25 V

DRM

applied 6 mA

DRM

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse and off-state 
leakage current at V

RRM

, V

DRM

Maximum RMS insulation voltage V

Maximum critical rate of rise of off-state voltage dV/dt T

I

RRM,

I

DRM

TJ = 125 °C, gate open circuit 15 mA

50 Hz

INS

= 125 °C, linear to 0.67 V

J

DRM

Vishay Semiconductors

12

3.0

3.0 A

10

4.0

270

3000 (1 min)

3600 (1 s)

1000 V/μs

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Junction operating and storage
temperature range

Maximum internal thermal resistance,
junction to case per leg

Typical thermal resistance,
case to heatsink per module

to heatsink

Mounting torque ± 10 %

busbar 3

Approximate weight

Case style JEDEC

, T

T

J

Stg

R

thJC

DC operation 0.22

-40 to +125 °C

°C/W

R

thCS

Mounting surface flat, smooth and greased 0.1

A mounting compound is recommended and the

4

torque should be rechecked after a period of

Nm

3 hours to allow for the spread of the compound.

75 g

2.7 oz.

®

AAP Gen 7 (TO-240AA)

R CONDUCTION PER JUNCTION

DEVICES

VSK.91.. 0.04 0.048 0.063 0.085 0.125 0.033 0.052 0.067 0.088 0.127 °C/W

Note

• Table shows the increment of thermal resistance R

SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

when devices operate at different conduction angles than DC

thJC

UNITS

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Average on-state current (A)

Maximum allowable case temperature (°C)

0 20406080100

70

80

90

100

110

120

130

180°
120°

90°
60°
30°

RthJC (DC) = 0.22°C/W

0 20406080100120140160

70

80

90

100

110

120

130

180°
120°

90°
60°
30°

DC

RthJC (DC) = 0.22°C/W

Average on-state current (A)

Maximum allowable case temperature (°C)

Average on-state current (A)

Maximum average on-state power loss (W)

0 20406080100

0

20

40

60

80

100

120

140

160

180°
120°

90°
60°
30°

RMS limit

Per leg, Tj = 125°C

Average on-state current (A)

Maximum average on-state power loss (W)

0 20406080100120140160

0

20

40

60

80

100

120

140

160

180

200

220

180°
120°

90°
60°
30°

RMS limit

DC

Per leg, Tj = 125°C

Peak half sine wave on-state current (A)

Number of equal amplitude half cycle current pulses (N)

110100

800

1000

1200

1400

1600

1800

At any rated load condition and with

rated Vrrm applied following surge

Initial Tj = Tj max

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100s

Per leg

VS-VSKU91.., VS-VSKV91.. Series

Vishay Semiconductors

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

Fig. 4 - On-State Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current

2000

1800

1600

Maximum Non-repetitive Surge Current

Versus Pulse Train Duration. Control

of conduction may not be maintained.

Initial Tj = 125°C

No Voltage Reapplied

Rated Vrrm reapplied

1400

Fig. 3 - On-State Power Loss Characteristics

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1200

1000

Peak half sine wave on-state current (A)

800

Per leg

0.01 0.1 1

Pulse train duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

4

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Total output current (A)

Maximum allowable ambient temperature (°C)

Maximum total power loss (W)

0 20 40 60 80 100 120 140

RthSA = 0.1 °C/W

0.2 °C/W

0.3 °C/W

0.5 °C/W
1 °C/W

0 100 200 300 400

0

100

200

300

400

500

600

700

800

900

60°

(rect)

3 x VSK.91 Series

6-pulse midpoint

connection bridge

Tj = 125°C

Instantaneous on-state voltage (V)

Instantaneous on-state current (A)

0.51.01.52.02.53.03.5

1

10

100

1000

Tj = 25°C

Tj = 125°C

Per leg

VS-VSKU91.., VS-VSKV91.. Series

Vishay Semiconductors

700

180°

600

500

400

∼

(sine)

180°

(rect)

300

200

Maximum total power loss (W)

100

single phase bridge connected

0

0 50 100 150 200

Total output current (A)

RthSA = 0.1 °C/W

0.2 °C/W

0.3 °C/W

0.5 °C/W
1 °C/W
2 °C/W

2 x VSK.91 Series

Tj = 125°C

0 20 40 60 80 100 120 140

Maximum allowable ambient temperature (°C)

Fig. 7 - On-State Power Loss Characteristics

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Fig. 8 - On-State Power Loss Characteristics

Fig. 9 - On-State Voltage Characteristics

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Square wave pulse duration (s)

Transient thermal impedance Z

thJC

(°C/W)

0.001 0.01 0.1 1 10

0.001

0.01

0.1

1

Steady state value

RthJC = 0.22 °C/W

(DC operation)

Per leg

0.1

1

10

100

0.001 0.01 0.1 1 10 100 1000

(b)

(a)

Rec tang ular ga te pulse

(4) (3) (2) (1)

TJ = -4 0 ° C

TJ = 25 ° C

TJ = 1 2 5 ° C

a)Recommended load line for

b)Recommended load line for

VGD

IGD

Fr e q u e n c y Lim i t e d b y PG ( A V )

(1) PGM = 200 W, t p = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms

<= 30% ra te d di/ d t: 15 V, 40 o hm s
tr = 1 µs, tp >= 6 µs

rated di/ dt: 20 V, 20 ohms
tr = 0.5 µs, t p >= 6 µs

IRK.71../ .91.. Series

Instantaneous gate voltage (V)

Instantaneous gate current (A)

VSK.

VS-VSKU91.., VS-VSKV91.. Series

Vishay Semiconductors

Fig. 10 - Thermal Impedance Z

ORDERING INFORMATION TABLE

Device code

VS-VS

Characteristics

thJC

Fig. 11 - Gate Characteristics

KU91/16

21 43 5

1

- Vishay Semiconductors product

2

- Module type

3

- Circuit configuration (see Circuit Configuration table)

Note

• To order the optional hardware go to www.vishay.com/doc?95172

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4

- Current code (95 A)

- Voltage code (see Voltage Ratings table)

5

6

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CIRCUIT CONFIGURATION

CIRCUIT DESCRIPTION

VS-VSKU91.., VS-VSKV91.. Series

CIRCUIT

CONFIGURATION CODE

Vishay Semiconductors

CIRCUIT DRAWING

VSKU

1

(1)

+

G1
(4)

G1
(4)

K1
(5)

K1
(5)

(2)

(3)

(1)

(2)

(3)

-

-

-

+

+

Two SCRs common cathodes U

Two SCRs common anodes V

2

3

4 5 7 6

VSKV

1

2

3

4 5 7 6

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95368

K2
(7)G2(6)

K2
(7)G2(6)

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ADD-A-PAK Generation VII - Thyristor

35 REF.

30 ± 0.5

(1.18 ± 0.020)

29 ± 0.5

(1 ± 0.020)

Viti M5 x 0.8

Screws M5 x 0.8

18 (0.7) REF.

15.5 ± 0.5

(0.6 ± 0.020)

Fast-on tab 2.8 x 0.8 (0.110 x 0.03)

6.7 ± 0.3 (0.26 ± 0.012)

30 ± 1 (1.18 ± 0.039)

24 ± 0.5

(1 ± 0.020)

1

2

3

4 5 7 6

80 ± 0.3 (3.15 ± 0.012)

92 ± 0.75 (3.6 ± 0.030)

20 ± 0.5 (0.79 ± 0.020)

20 ± 0.5 (0.79 ± 0.020)

15 ± 0.5 (0.59 ± 0.020)

22.6 ± 0.2
(0.89 ± 0.008)

6.3 ± 0.2 (0.248 ± 0.008)

5.8 ± 0.25 (0.228 ± 0.010)

4 ± 0.2 (0.157 ± 0.008)

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

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