Datasheet VS-VSKH91-16P, VS-VSKH91-16S90P Specification

VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series

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AAP Gen 7 (TO-240AA) Power Modules

Thyristor/Diode and Thyristor/Thyristor, 95 A

PRIMARY CHARACTERISTICS

I

or I

T(AV)

F(AV)

Type Modules - thyristor, standard

Package AAP Gen 7 (TO-240AA)

MECHANICAL DESCRIPTION

The AAP Gen 7 (TO-240AA), new generation of AAP module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.

95 A

Vishay Semiconductors

FEATURES

• High voltage

• Industrial standard package

• Low thermal resistance

• UL approved file E78996

• Designed and qualified for industrial level

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

BENEFITS

• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate

• Up to 1600 V

• High surge capability

• Easy mounting on heatsink

ELECTRICAL DESCRIPTION

These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

or I

I

T(AV)

F(AV)

I

O(RMS)

I

TSM,

I

FSM

2

I

t

2

I

t 200 kA2s

V

RRM

T

Stg

T

J

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85 °C 95

As AC switch 210

50 Hz 2000

60 Hz 2094

50 Hz 20

60 Hz 18.26

Range 400 to 1600 V

-40 to +125 °C

-40 to +125 °C

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A

kA2s

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ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

TYPE NUMBER

VS-VSK.91

, MAXIMUM

V

VOLTAGE

CODE

RRM

REPETITIVE PEAK

REVERSE VOLTAGE

V

04 400 500 400

06 600 700 600

08 800 900 800

10 1000 1100 1000

12 1200 1300 1200

14 1400 1500 1400

16 1600 1700 1600

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current (thyristors) I

Maximum average forward current (diodes) I

T(AV)

F(AV)

180° conduction, half sine wave,

= 85 °C

T

C

Vishay Semiconductors

V

, MAXIMUM REPETITIVE

DRM

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

V

95

I

RRM, IDRM

AT 125 °C

mA

15

Maximum continuous RMS on-state current,
as AC switch

Maximum peak, one-cycle non-repetitive
on-state or forward current

2

Maximum I

Maximum I

t for fusing I2t

2

t for fusing I2t

Maximum value or threshold voltage V

Maximum value of on-state 
slope resistance

Maximum peak on-state or forward voltage

Maximum non-repetitive rate of rise of
turned on current

Maximum holding current I

Maximum latching current I

Notes

(1)I2

t for time tx = I2t x t

(2)

Average power = V

(3)

16.7 % x  x IAV < I <  x I

(4)

I >  x IAV

T(TO)

x

x I

T(AV)

AV

+ rt x (I

T(RMS)

2

)

I

O(RMS)

I

TSM

or

I

FSM

T(TO)

r

t

V

TM

V

FM

dI/dt

H

L

or

I

(RMS)

t = 10 ms

t = 8.3 ms 2094

t = 10 ms

t = 8.3 ms 1760

t = 10 ms

t = 8.3 ms 18.26

t = 10 ms

t = 8.3 ms 12.91
t = 0.1 ms to 10 ms, no voltage reapplied 

(1)

T

= TJ maximum

J

Low level

(2)

High level

Low level

(2)

High level

ITM =  x I

IFM =  x I

TJ = 25 °C, from 0.67 V
I

=  x I

TM

No voltage
reapplied

Sinusoidal
half wave,

100 % V

RRM



initial T

reapplied

No voltage
reapplied

Initial TJ = TJ maximum

100 % V

RRM



reapplied

(3)

TJ = TJ maximum

(4)

(3)

TJ = TJ maximum

(4)

T(AV)

TJ = 25 °C 1.73 V

F(AV)

,

, Ig = 500 mA, tr < 0.5 μs, tp > 6 μs

T(AV)

DRM

I

(RMS)

= TJ maximum

J

TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit

TJ = 25 °C, anode supply = 6 V, resistive load 400

210

2000

1682

20

14.14

kA2s

200 kA

0.97

1.1

2.76

2.38

m

150 A/μs

250

A

V

mA

2

s

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TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak gate current I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

TJ = -40 °C

Maximum gate voltage required to trigger V

T

GT

= 25 °C 2.5

J

T

= 125 °C 1.7

J

Anode supply = 6 V
resistive load

TJ = -40 °C

Maximum gate current required to trigger I

Maximum gate voltage that will not trigger V

Maximum gate current that will not trigger I

GT

GD

T

TJ = 125 °C, rated V

GD

TJ = 125 °C, rated V

= 25 °C 150

J

= 125 °C 80

J

Anode supply = 6 V
resistive load

applied 0.25 V

DRM

applied 6 mA

DRM

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse and off-state 
leakage current at V

RRM

, V

DRM

Maximum RMS insulation voltage V

Maximum critical rate of rise of off-state voltage dV/dt T

I

RRM,

I

DRM

INS

TJ = 125 °C, gate open circuit 15 mA

50 Hz

= 125 °C, linear to 0.67 V

J

DRM

Vishay Semiconductors

12

3.0

3.0 A

10

4.0

270

3000 (1 min)

3600 (1 s)

1000 V/μs

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Junction operating and storage
temperature range

Maximum internal thermal resistance,
junction to case per leg

Typical thermal resistance,
case to heatsink per module

to heatsink

Mounting torque ± 10 %

busbar 3

Approximate weight

Case style JEDEC

T

, T

J

Stg

R

thJC

DC operation 0.22

-40 to +125 °C

°C/W

R

thCS

Mounting surface flat, smooth and greased 0.1

A mounting compound is recommended and
the torque should be rechecked after a period of

4

Nm

3 hours to allow for the spread of the compound.

75 g

2.7 oz.

®

AAP Gen 7 (TO-240AA)

R CONDUCTION PER JUNCTION

DEVICES

VSK.91.. 0.04 0.048 0.063 0.085 0.125 0.033 0.052 0.067 0.088 0.127 °C/W

Note

• Table shows the increment of thermal resistance R

SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

when devices operate at different conduction angles than DC

thJC

UNITS

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VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series

Average on-state current (A)

Maximum allowable case temperature (°C)

0 20406080100

70

80

90

100

110

120

130

180°
120°

90°
60°
30°

RthJC (DC) = 0.22°C/W

Average on-state current (A)

Maximum average on-state power loss (W)

0 20406080100

0

20

40

60

80

100

120

140

160

180°
120°

90°
60°
30°

RMS limit

Per leg, Tj = 125°C

Peak half sine wave on-state current (A)

Pulse train duration (s)

0.01 0.1 1

800

1000

1200

1400

1600

1800

2000

Per leg

Maximum Non-repetitive Surge Current

Versus Pulse Train Duration. Control

of conduction may not be maintained.

Initial Tj = 125°C

No Voltage Reapplied

Rated Vrrm reapplied

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Fig. 1 - Current Ratings Characteristics

130

RthJC (DC) = 0.22°C/W

120

110

100

DC

90

180°
120°

90°

80

60°

Maximum allowable case temperature (°C)

30°

70

0 20406080100120140160

Average on-state current (A)

Fig. 2 - Current Ratings Characteristics

220

200

180

160

140

180°
120°

90°
60°
30°

DC

120

RMS limit

100

80

60

40

20

0

Maximum average on-state power loss (W)

Per leg, Tj = 125°C

0 20406080100120140160

Average on-state current (A)

Fig. 4 - On-State Power Loss Characteristics

1800

At any rated load condition and with

rated Vrrm app lied following surge

1600

Initial T j = Tj max

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100s

1400

1200

1000

Per leg

Peak half sine wave on-state current (A)

800

110100

Number of equal amplitude half cycle current pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 3 - On-State Power Loss Characteristics

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Fig. 6 - Maximum Non-Repetitive Surge Current

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400

350

300

250

180°
120°

90°
60°
30°

200

150

100

50

VSK.91 Series

Maximum total on-state power loss (W)

0

0 40 80 120 160 200 240

Total RMS output current (A)

Fig. 7 - On-State Power Loss Characteristics

700

180°

600

500

400

∼

(sine)

180°

(rect)

300

RthSA = 0.1 °C/W

0.2 °C/W

0.3 °C/W

0.5 °C/W

0.7 °C/W
1 °C/W

1.5 °C/W
3 °C/W

Per module

Tj = 125°C

0 20 40 60 80 100 120 140

Maximum allowable ambient temperature (°C)

RthSA = 0.1 °C/W

0.2 °C/W

0.3 °C/W

0.5 °C/W
1 °C/W
2 °C/W

200

Maximum total power loss (W)

100

single phase bridge connected

0

050100150200

Total output current (A)

Fig. 8 - On-State Power Loss Characteristics

900

800

700

600

500

(rect)

400

300

200

Maximum total power loss (W)

100

three phase bridge connected

0

0 40 80 120 160 200 240

Total output current (A)

Fig. 9 - On-State Power Loss Characteristics

2 x VSK.91 Series

Tj = 125°C

120°

3 x VSK.91 Series

Tj = 125°C

0 20 40 60 80 100 120 140

Maximum allowable ambient temperature (°C)

RthSA = 0.1 °C/W

0.2 °C/W

0.3 °C/W

0.5 °C/W
1 °C/W

0 20 40 60 80 100 120 140

Maximum allowable ambient temperature (°C)

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0.1

1

10

100

0.001 0.01 0.1 1 10 100 1000

(b)

(a)

Rectangular gate pulse

(4) (3) (2) (1)

TJ = - 4 0 ° C

TJ = 2 5 °C

TJ = 1 2 5 ° C

a)Recommended load line for

b)Recommended load line for

VGD

IGD

Fr e q u e n c y Lim i te d b y PG ( A V )

(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, t p = 1 ms
(3) PGM = 30 W, t p = 2 ms
(4) PGM = 12 W, t p = 5 ms

<= 30% ra ted d i/ d t: 15 V, 40 o hm s
tr = 1 µs, t p >= 6 µs

rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs

IRK.71../ .91.. Series

Instantaneous gate voltage (V)

Instantaneous gate current (A)

VSK.

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1000

Per leg

100

Vishay Semiconductors

10

Tj = 125°C

Instantaneous on-state current (A)

Tj = 25°C

1

0.5 1.0 1.5 2.0 2.5 3.0 3.5

Instantaneous on-state voltage (V)

Fig. 10 - On-State Voltage Drop Characteristics

1

(°C/W)

thJC

Steady state value

RthJC = 0.22 °C/W

(DC operation)

0.1

0.01

0.001

Transient thermal impedance Z

Per leg

0.001 0.01 0.1 1 10

Square wave pulse duration (s)

Fig. 11 - Thermal Impedance Z

Characteristics

thJC

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Fig. 12 - Gate Characteristics

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VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series

2 - Module type

3 - Circuit configuration (see Circuit Configuration table)

4

- Current code (95 A)

5 - Voltage code (see Voltage Ratings table)

Device code

KT91/16

2 43 5

1 - Vishay Semiconductors product

VS-VS

1

+

-

K1
(5)

K2
(7)G2(6)

G1

(4)

~

(1)

(2)

(3)

VSKT

1

2

3

4 5 7 6

+

-

K1
(5)G1(4)

~

(1)

(2)

(3)

VSKH

1

2

3

4 5

+

+

K1
(5)G1(4)

-

(1)

(2)

(3)

VSKN

1

2

3

4 5

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ORDERING INFORMATION TABLE

Vishay Semiconductors

Note

• To order the optional hardware go to www.vishay.com/doc?95172

CIRCUIT CONFIGURATION

CIRCUIT DESCRIPTION

Two SCRs doubler circuit T

SCR/diode doubler circuit, positive control H

SCR/diode doubler circuit, negative control L

CIRCUIT

CONFIGURATION CODE



CIRCUIT DRAWING

(1)

~

1

VSKL

+

2

(2)

3

7 6

-

(3)

K2
(7)G2(6)

SCR/diode common anodes N

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95368

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ADD-A-PAK Generation VII - Thyristor

35 REF.

30 ± 0.5

(1.18 ± 0.020)

29 ± 0.5

(1 ± 0.020)

Viti M5 x 0.8

Screws M5 x 0.8

18 (0.7) REF.

15.5 ± 0.5

(0.6 ± 0.020)

Fast-on tab 2.8 x 0.8 (0.110 x 0.03)

6.7 ± 0.3 (0.26 ± 0.012)

30 ± 1 (1.18 ± 0.039)

24 ± 0.5

(1 ± 0.020)

1

2

3

4 5 7 6

80 ± 0.3 (3.15 ± 0.012)

92 ± 0.75 (3.6 ± 0.030)

20 ± 0.5 (0.79 ± 0.020)

20 ± 0.5 (0.79 ± 0.020)

15 ± 0.5 (0.59 ± 0.020)

22.6 ± 0.2
(0.89 ± 0.008)

6.3 ± 0.2 (0.248 ± 0.008)

5.8 ± 0.25 (0.228 ± 0.010)

4 ± 0.2 (0.157 ± 0.008)

DIMENSIONS in millimeters (inches)

Outline Dimensions

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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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