Datasheet VS-VSKE71/16P Specification

VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. Series

AAP Gen 7 (TO-240AA)

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AAP Gen 7 (TO-240AA)

Power Modules Standard Diodes, 80 A

PRIMARY CHARACTERISTICS

I

F(AV)

Type Modules - Diode, High Voltage

Package AAP Gen 7 (TO-240AA)

Circuit configuration

Two diodes doubler circuit, two

diodes common cathode, two diodes

common anode, single diode

MECHANICAL DESCRIPTION

The AAP Gen 7 (TO-240AA), new generation of AAP module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.

80 A

Vishay Semiconductors

FEATURES

• High voltage

• Industrial standard package

• Low thermal resistance

• UL approved file E78996

• Designed and qualified for industrial level

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

BENEFITS

• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate

• Up to 1600 V

• High surge capability

• Easy mounting on heatsink

ELECTRICAL DESCRIPTION

These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

2

√t 112.5 kA2√s

I

V

RRM

T

, T

Stg

J

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T

C

50 Hz 1500

60 Hz 1570

50 Hz 11.25

60 Hz 10.26

Range 400 to 1600 V

1

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80 A

110 °C

126

-40 to +150 °C

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A

kA2s

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ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-VSK.71

, MAXIMUM REPETITIVE PEAK

V

VOLTAGE

CODE

RRM

REVERSE VOLTAGE

V

04 400 500

06 600 700

08 800 900

10 1000 1100

12 1200 1300

14 1400 1500

16 1600 1700

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
at case temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 112.5 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V
Low level value of forward

slope resistance
High level value of forward

slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

r

180° conduction, half sine wave

t = 10 ms

t = 8.3 ms 1570

t = 10 ms

t = 8.3 ms 1320

t = 10 ms

t = 8.3 ms 10.26

t = 10 ms

t = 8.3 ms 7.23

(16.7 % x π x I
(I > π x I

(16.7 % x π x I

f1

(I > π x I

f2

IFM = π x I

FM

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

F(AV)

), TJ = TJ maximum 0.83

F(AV)

< I < π x I

F(AV)

), TJ = TJ maximum 2.89

F(AV)

, TJ = 25 °C, tp = 400 μs square wave 1.6 V

F(AV)

), TJ = TJ maximum 0.73

F(AV)

), TJ = TJ maximum 3.22

F(AV)

Vishay Semiconductors

I

MAXIMUM

RRM

V

80 A

110 °C

126

1500

1260

11.25

7.95

AT T

= 150 °C

J

mA

10

A

kA2s

V

mΩ

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse
leakage current

Maximum RMS insulation voltage V

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I

RRM

TJ = 150 °C 10 mA

INS

50 Hz

3000 (1 min)

3600 (1 s)

2

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Document Number: 94626

V

VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. Series

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THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Junction and storage temperature range T
Maximum internal thermal resistance,

junction to case per leg
Typical thermal resistance,

case to heatsink per module

to heatsink A mounting compound is recommended and the

Mounting torque ± 10 %

Approximate weight

Case style JEDEC

busbar 3

, T

J

Stg

R

thJC

R

thCS

DC operation 0.28

Mounting surface flat, smooth and greased 0.1

torque should be rechecked after a period of
3 hours to allow for the spread of the compound.

®

ΔR CONDUCTION PER JUNCTION

DEVICES

VSK.71 0.075 0.088 0.113 0.155 0.228 0.06 0.094 0.12 0.158 0.23 °C/W

Note

• Table shows the increment of thermal resistance R

SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

when devices operate at different conduction angles than DC

thJC

Vishay Semiconductors

-40 to +150 °C

°C/W

4

Nm

75 g

2.7 oz.

AAP Gen 7 (TO-240AA)

UNITS

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VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. Series

Average forward current (A)

Maximum allowable case temperature (°C)

020406080100

90

100

110

120

130

140

150

180°
120°

90°
60°
30°

RthJC (DC) = 0.28°C/W

Average forward current (A)

Maximum average forward power loss (W)

0 102030405060708090

0

20

40

60

80

100

120

180°
120°

90°
60°
30°

RMS limit

Per leg, Tj = 150°C

Peak half sine wave forward current (A)

Number of equal amplitude half cycle current pulses (N)

110100

400

600

800

1000

1200

1400

At any rated load condition and with

rated Vrrm applied following surge

Initial T j = Tj max

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100s

Per leg

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Fig. 1 - Current Ratings Characteristics

150

RthJC (DC) = 0.28°C/W

140

130

120

DC

110

180°
120°

90°

100

60°

Maximum allowable case temperature (°C)

30°

90

0 20406080100120140

Average forward current (A)

Fig. 2 - Current Ratings Characteristics

160

140

120

100

80

180°
120°

90°
60°
30°

DC

RMS limit

60

40

20

Maximum average forward power loss (W)

0

Per leg, Tj = 150°C

0 20 40 60 80 100 120 140

Average forward current (A)

Fig. 4 - Foward Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 3 - Forward Power Loss Characteristics

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1600

1400

1200

Maximum Non-repetitive Surge Current

Versus Pulse Train Duration

Initial T j = 15 0°C

No Voltage Reapplied

Rated Vrrm reapplied

1000

800

600

400

Peak half sine wave forward current (A)

200

Per leg

0.01 0.1 1

Pulse train duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

4

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VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. Series

Total RMS output current (A)

Maximum total forward power loss (W)

Maximum allowable ambient temperature (°C)

0 20 40 60 80 100 120 140 16

RthSA = 0.5 °C/W

0.7 °C/W
1 °C/W

1.5 °C/W
2 °C/W
3 °C/W
7 °C/W

0 20406080100120140

0

20

40

60

80

100

120

140

160

180°

(Sine)

VSK.71 Series

Per leg

Tj = 150°C

DC

Total output current (A)

Maximum total power loss (W)

0 20 40 60 80 100 120 140 16

0

RthSA = 0.1 °C/W

0.2 °C/W

0.3 °C/W

0.5 °C/W
1 °C/W
2 °C/W

Maximum allowable ambient temperature (°C)

0 50 100 150 200

0

100

200

300

400

500

600

180°

(sine)

180°
(rect)

2 x VSK.71 Series

single phase bridge connected

Tj = 150°C

Total output current (A)

Maximum allowable ambient temperature (°C)

Maximum total power loss (W)

0 20 40 60 80 100 120 140 160

RthSA = 0.1 °C/W

0.2 °C/W

0.3 °C/W

0.4 °C/W

0.7 °C/W

1.5 °C/W

0 50 100 150 200

0

100

200

300

400

500

600

120°

(rect)

3 x VSK.71 Series

three phase bridge connected

Tj = 150°C

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Fig. 7 - Forward Power Loss Characteristics

Vishay Semiconductors

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Fig. 8 - Forward Power Loss Characteristics

Fig. 9 - Forward Power Loss Characteristics

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VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. Series

Square wave pulse duration (s)

Transient thermal impedance Z

thJC

(°C/W)

0.001 0.01 0.1 1 10

0.01

0.1

1

Steady state value
RthJC = 0.28 °C/W
(DC operation)

Per leg

- Module type

- Circuit configuration (see Circuit Configuration table)

- Current code (80 A)

- Voltage code (see Voltage Ratings table)

Device code

KD71/16

1

- Vishay Semiconductors product

2

3

4

5

521 43

VS-VS

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1000

Per leg

100

10

Tj = 150°C

Instantaneous forward current (A)

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Instantaneous forward voltage (V)

Fig. 10 - Forward Voltage Characteristics

Tj = 25°C

Vishay Semiconductors

Fig. 11 - Thermal Impedance Z

ORDERING INFORMATION TABLE

Note

• To order the optional hardware go to www.vishay.com/doc?95172

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Characteristics

thJC

6

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VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. Series

VSKD...

~

(1) (3)(2)

-+

1

2

3

+- -

VSKC...

(1)

(3)(2)

1

2

3

-

+

+

VSKJ...

(1)

(3)(2)

1

2

3

-+

VSKE...

1

2

3

(3)(1)

(2)

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CIRCUIT CONFIGURATION

CIRCUIT DESCRIPTION

Two diodes doubler circuit D

Two diodes common cathode C

CIRCUIT

CONFIGURATION CODE

Vishay Semiconductors

CIRCUIT DRAWING

Two diodes common anode J

Single diode E

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95369

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ADD-A-PAK Generation VII - Diode

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

Viti M5 x 0.8

Screws M5 x 0.8

18 (0.7) REF.

35 REF.

22.6 ± 0.2

30 ± 0.5

29 ± 0.5

(1 ± 0.020)

(1.18 ± 0.020)

(0.89 ± 0.008)

6.3 ± 0.2 (0.248 ± 0.008)

80 ± 0.3 (3.15 ± 0.012)

1

15 ± 0.5 (0.59 ± 0.020)

20 ± 0.5 (0.79 ± 0.020)

92 ± 0.75 (3.6 ± 0.030)

2

20 ± 0.5 (0.79 ± 0.020)

3

6.7 ± 0.3 (0.26 ± 0.012)

24 ± 0.5

(1 ± 0.020)

4 5 7 6

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