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E-PUK (TO-200AB)
Phase Control Thyristors
(Hockey PUK Version), 720 A
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
Package E-PUK (TO-200AB)
Circuit configuration Single SCR
400 V, 800 V, 1200 V, 1400 V, 1600 V
720 A
1.96 V
100 mA
-40 °C to +125 °C
VS-ST330C Series
Vishay Semiconductors
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case E-PUK (TO-200AB)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST330C..C
Revision: 27-Sep-17
PARAMETER TEST CONDITIONS VALUES UNITS
720 A
T
hs
T
hs
50 Hz 9000
60 Hz 9420
50 Hz 405
60 Hz 370
Typical 100 μs
V
VOLTAGE
CODE
04 400 500
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700
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DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
, MAXIMUM REPETITIVE
NON-REPETITIVE PEAK VOLTAGE
V
1
55 °C
1420 A
25 °C
kA2s
400 to 1600 V
-40 to 125 °C
V
, MAXIMUM
RSM
V
I
DRM/IRRM
AT T
MAXIMUM mA
Document Number: 94407
A
MAXIMUM
= TJ
J
50
Page 2
VS-ST330C Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 4050 kA2s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
I
T(AV)
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 1420
t = 10 ms
t = 8.3 ms 9420
t = 10 ms
t = 8.3 ms 7920
t = 10 ms
t = 8.3 ms 370
t = 10 ms
t = 8.3 ms 262
(16.7 % x x I
(I > x I
(16.7 % x x I
(I > x I
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
), TJ = TJ maximum 0.92
T(AV)
), TJ = TJ maximum 0.57
T(AV)
T(AV)
T(AV)
RRM
< I < x I
< I < x I
Ipk = 1810 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 V
TJ = 25 °C, anode supply 12 V resistive load
Vishay Semiconductors
720 (350) A
55 (75) °C
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 0.91
T(AV)
), TJ = TJ maximum 0.58
T(AV)
9000
7570
405
287
600
1000
A
kA2s
V
m
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 , t
T
= TJ maximum, anode voltage 80 % V
J
1 μs
r
DRM
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
, TJ = 25 °C
DRM
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
V
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
R
1000 A/µs
1.0
µs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
,
I
RRM
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/µs
applied 50 mA
Revision: 27-Sep-17
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Document Number: 94407
Page 3
VS-ST330C Series
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TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
GM
G(AV)
GM
GT
GT
GD
GD
TJ = TJ maximum, tp 5 ms 10.0
TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
TJ = TJ maximum, tp 5 ms 3.0 A
GM
TJ = TJ maximum, tp 5 ms
GM
TJ = -40 °C
= 25 °C 100 200
J
T
= 125 °C 50 -
J
TJ = -40 °C 2.5 -
T
= 25 °C 1.8 3.0
J
T
= 125 °C 1.1 -
J
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum
value which will not trigger any
unit with rated V
cathode applied
Vishay Semiconductors
anode to
DRM
VALUES
TYP. MAX.
20
5.0
200 -
10 mA
0.25 V
UNITS
W
V
mAT
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to heatsink R
Maximum thermal resistance, case to heatsink R
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.09
DC operation double side cooled 0.04
DC operation single side cooled 0.02
DC operation double side cooled 0.01
Mounting force, ± 10 %
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet E-PUK (TO-200AB)
R
CONDUCTION ANGLE
CONDUCTION
thJ-hs
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS UNITS
180° 0.012 0.011 0.008 0.007
120° 0.014 0.012 0.014 0.013
90° 0.017 0.015 0.019 0.017
= TJ maximum K/W
T
J
60° 0.025 0.022 0.026 0.023
30° 0.043 0.036 0.043 0.037
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJ-hs
-40 to 125
-40 to 150
9800
(1000)
°C
K/W
N
(kg)
Revision: 27-Sep-17
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Document Number: 94407
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10
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400 1600
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C
)
ST330C. .C Series
(Double Side Cooled)
R (DC) = 0.04 K/W
thJ-hs
0
200
400
600
800
1000
1200
1400
1600
1800
0 200 400 600 800 1000 1200
DC
180°
120°
90°
60°
30°
RM S Lim it
Conduction Perio d
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST330C..C Series
T = 125°C
J
VS-ST330C Series
Vishay Semiconductors
130
120
110
100
90
80
70
0 50 100 150 200 250 300 350 400
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
ST3 30 C . . C Se r i e s
(Single Side Cooled)
R (DC) = 0.09 K/ W
thJ-hs
Cond uc tion Angle
30°
60°
90°
120°
Fig. 1 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
50
40
30
20
0 100 200 300 400 500 600 700 800 900
Maximum Allowa ble Heatsink Temperature (°C)
Average On-sta te Current (A)
ST3 3 0 C . . C Se r ie s
(Single Side Cooled)
R (DC) = 0.09 K/ W
thJ-hs
Conduction Period
60°
30°
90°
120°
180°
180°
DC
Fig. 4 - Current Ratings Characteristics
1400
1200
1000
Ma ximum A ve rag e O n-sta t e Pow er Lo ss (W )
180°
120°
90°
60°
30°
800
600
400
200
0
0 100 200 300 400 500 600 700 800
Average On-st ate Current (A)
Cond uc tion Angle
ST3 3 0 C . . C Se r ie s
T = 125° C
J
RM S Li m i t
Fig. 2 - Current Ratings Characteristics
130
120
110
100
90
80
70
Revision: 27-Sep-17
60
50
40
30
20
0 200 400 600 800 1000
Maximum Allowable Heatsink Temperature (°C)
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Fig. 5 - On-State Power Loss Characteristics
ST3 30 C . . C Se r ie s
(Double Side Cooled)
R (DC) = 0.04 K/ W
thJ-hs
Cond uc tion Angle
30°
60°
90°
120°
180°
Average On-st ate Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
4
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3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
110100
Number Of Equal Amp litud e Half Cyc le Current Pulses (N)
Pea k Ha lf S
ine Wave On-state Current (A)
Init ial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST3 30 C . . C Se r i e s
At Any Rate d Loa d Co nd ition And With
Rated V Applied Following Surge.
RRM
100
1000
10000
01234567
T = 25 ° C
J
In sta n t a n eo us O n-st at e C urr en t ( A)
Instantaneous On-state Voltage (V)
T = 1 25 °C
J
ST330C..C Serie s
VS-ST330C Series
Vishay Semiconductors
9000
Maximum Non Rep etitive Surge Current
Peak Half Sine Wave On-state Current (A)
8500
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
Versus Pulse Tra in Duration. Control
Of Conduction Ma y Not Be Mainta ined.
ST3 30 C . . C Se r ie s
0.01 0.1 1
Pul se Tr a in Du ra tio n ( s)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
0.1
St e a d y St a t e Va l u e
R = 0.09 K/ W
(Single Side Cooled)
thJ-hs
R = 0.04 K/ W
(Double Side Cooled)
(DC Operation)
Revision: 27-Sep-17
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0.01
0.001
Tra nsient Th ermal Imped anc e Z (K/W)
0.001 0.01 0.1 1 10
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Fig. 9 - On-State Voltage Drop Characteristics
thJ-hs
thJ-hs
Fig. 10 - Thermal Impedance Z
Fig. 8 - Maximum Non-Repetitive Surge Current
ST3 3 0C . . C Se r i e s
Sq u a r e W a v e Pu l se D u ra t i o n ( s)
Characteristics
thJ-hs
5
Single and Double Side Cooled
Document Number: 94407
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0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IG D
(b)
(a)
Tj = 25 ° C
Tj = 1 25 ° C
Tj = - 40 ° C
(2)
(3)
Instantaneous Gate Current (A)
In st a nt a n e ou s G a t e V o lt a g e ( V)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms ; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4 ms
(2) PGM = 20W, tp = 2 ms
(3) PGM = 40W, tp = 1 ms
(4) PGM = 60W, tp = 0.66 ms
Rectangular gate pulse
D e v ic e : ST3 3 0C . . C Se r ie s
(4)
ORDERING INFORMATION TABLE
VS-ST330C Series
Vishay Semiconductors
Fig. 11 - Gate Characteristics
Device code
VS- ST 33 0 C 16 C 1 -
1
-Vishay Semiconductors product
- Thyristor
2
3
-Essential part number
- 0 = converter grade
4
5
- C = ceramic PUK
6
- Voltage code x 100 = V
7
- C = PUK case E-PUK (TO-200AB)
8
- 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
9
- Critical dV/dt:
None = 500 V/μs (standard selection)
L = 1000 V/μs (special selection)
Dimensions http://www.vishay.com/doc?95075
Revision: 27-Sep-17
For technical questions within your region: [email protected]
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LINKS TO RELATED DOCUMENTS
51 32 4 6 7 8 9
(see Voltage Ratings table)
RRM
6
Document Number: 94407
Page 7
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4.75 (0.19)
28 (1.10)
6.5 (0.26)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
25.3 (0.99)
DIA. MAX.
14.1/15.1
(0.56/0.59)
25° ± 5°
25.3 (0.99)
DIA. MAX.
40.5 (1.59) DIA. MAX.
42 (1.65) MAX.
Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
C
A
G
Note:
A = Anode
C = Cathode
G = Gate
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
E-PUK (TO-200AB)
Revision: 12-Jul-17
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Document Number: 95075
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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