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TO-209AB (TO-93)
PRODUCT SUMMARY
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
Package TO-209AB (TO-93)
Diode variation Single SCR
Phase Control Thyristors
(Stud Version), 280 A
FEATURES
• Center amplifying gate
• International standard case TO-209AB (TO-93)
• Hermetic metal case with glass-metal seal
insulator
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
280 A
400 V, 600 V
1.28 V
150 mA
-40 °C to 125 °C
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
VS-ST280S Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 7850
60 Hz 8220
50 Hz 308
60 Hz 281
Typical 100 μs
280 A
85 °C
440
400/600 V
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST280S
V
VOLTAGE
CODE
04 400 500
06 600 700
DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
, MAXIMUM REPETITIVE
NON-REPETITIVE PEAK VOLTAGE
V
V
, MAXIMUM
RSM
I
DRM/IRRM
T
= TJ MAXIMUM mA
V
J
A
kA2s
MAXIMUM AT
30
Revision: 11-Mar-14
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Document Number: 94402
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VS-ST280S Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 3100 kA2s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Maximum (typical) latching current I
I
T(AV)
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
180° conduction, half sine wave 280 A
DC at 75 °C case temperature 440
t = 10 ms
t = 8.3 ms 8220
t = 10 ms
t = 8.3 ms 6900
t = 10 ms
t = 8.3 ms 220
t = 10 ms
t = 8.3 ms 200
(16.7 % x x I
(I > x I
(16.7 % x x I
(I > x I
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
), TJ = TJ maximum 0.88
T(AV)
), TJ = TJ maximum 0.47
T(AV)
T(AV)
T(AV)
RRM
< I < x I
< I < x I
Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.28 V
TJ = 25 °C, anode supply 12 V resistive load
Vishay Semiconductors
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 0.84
T(AV)
), TJ = TJ maximum 0.50
T(AV)
1000 (300)
85 °C
7850
6600
310
218
600
A
kA2s
V
m
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 , t
T
= TJ maximum, anode voltage 80 % V
J
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
DRM
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs,
V
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
R
1 μs
r
, TJ = 25 °C
DRM
1000 A/μs
1.0
μs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES
Maximum critical rate of rise
of off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
I
RRM,
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/μs
applied 30 mA
UNIT
S
Revision: 11-Mar-14
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 94402
Page 3
VS-ST280S Series
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TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
DC gate current required to trigger I
DC gate voltage required to trigger V
GM
G(AV)
GM
GM
GM
GT
GT
TJ = TJ maximum, tp 5 ms 10.0
TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
TJ = TJ maximum, tp 5 ms 3.0 A
TJ = TJ maximum, tp 5 ms
TJ = - 40 °C
= 25 °C 90 150
J
= 125 °C 40 -
T
J
TJ = - 40 °C 2.9 -
= 25 °C 1.8 3.0
J
T
= 125 °C 1.2 -
J
Maximum required gate trigger/current/
voltage are the lowest value which will
trigger all units 12 V anode to cathode
applied
Vishay Semiconductors
VALUES
TYP. MAX.
180 -
20
5.0
UNIT
S
W
V
mAT
VT
DC gate current not to trigger I
DC gate voltage not to trigger V
GD
GD
TJ = TJ maximum
Maximum gate current/voltage not to
trigger is the maximum value which will
not trigger any unit with rated V
anode to cathode applied
DRM
10 mA
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case R
Maximum thermal resistance, case to heatsink R
Mounting torque, ± 10 %
J
Stg
thJC
thCS
DC operation 0.105
Mounting surface, smooth, flat and greased 0.04
Non-lubricated threads 31 (275)
Lubricated threads 24.5 (210)
Approximate weight 280 g
Case style See dimensions - link at the end of datasheet TO-209AB (TO-93)
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.016 0.012
120° 0.019 0.020
T
90° 0.025 0.027
= TJ maximum K/W
J
60° 0.036 0.037
30° 0.060 0.060
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
-40 to 125
-40 to 150
(lbf · in)
°C
K/W
N · m
Revision: 11-Mar-14
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 94402
Page 4
VS-ST280S Series
80
90
100
110
120
130
0 50 100 150 200 250 300
Maximum Allowable Ca se Temp erature (°C)
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
ST2 80 S Se r i e s
R (DC) = 0.105 K/ W
thJC
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400 450
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowab le Case Temp erature (°C)
Conduc tion Period
ST2 80 S Se r ie s
R ( DC) = 0.105 K/ W
thJC
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
1
K
/
W
D
e
l
t
a
R
0
.
1
6
K
/
W
0
.
2
K
/
W
0
.
2
5
K
/
W
0
.
3
K
/
W
0
.
4
K
/
W
0
.
6
K
/
W
0
.
8
K
/
W
1
.
2
K
/
W
t
h
S
A
0
50
100
150
200
250
300
350
0
50 100 150 200 250 300
180°
120°
90°
60°
30°
RM S Lim it
Conduc tion Angle
Maximum Average On-state Power Loss (W)
Avera g e On -st at e C urre n t ( A)
ST280S Se ries
T = 125°C
J
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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Vishay Semiconductors
Revision: 11-Mar-14
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 3 - On-State Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
0
Maximum Average On-state Power Loss (W)
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DC
180°
120°
90°
60°
30°
RM S Lim i t
0 50 100150200250300350400450
Average On-state Current (A)
Conduction Period
ST280S Series
T = 12 5° C
J
25 50 75 100 125
Maximum Allowab le Ambient Temp erature (°C)
Fig. 4 - On-State Power Loss Characteristics
4
0
0
0
0
0
.
0
.
4
0
.
1
R
0
.
0
t
6
h
S
K
A
/
.
0
W
8
K
/
W
.
1
2
K
/
.
1
6
K
/
.
2
K
/
W
3
K
/
W
K
/
W
6
K
/
W
K
/
W
=
0
.
0
3
K
/
W
W
W
D
e
l
t
a
R
Document Number: 94402
Page 5
VS-ST280S Series
3000
3500
4000
4500
5000
5500
6000
6500
7000
110100
Numb er Of Eq ua l Amp litud e Half Cy c le Current Pulses (N)
Pea k Half Sine Wa ve On-sta te Curren t (A)
ST2 80 S Se r i e s
Initia l T = 125°C
@ 60 Hz 0. 0083 s
@ 50 Hz 0. 0100 s
J
At Any Ra te d Load Co ndition And With
Rated V Applied Following Surge.
RRM
0.001
0.01
0.1
1
0.001 0. 01 0.1 1 10
Sq u a r e W a v e P u l se D u r a t i o n ( s)
thJC
Transient Th ermal Imped anc e Z (K/W)
Steady State Value
R = 0.105 K/ W
(DC Operation)
ST2 8 0 S Se r i e s
thJC
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7000
At Any Ra te d Load C ond ition And With
Rated V Applied Following Surge.
6500
6000
5500
5000
4500
4000
ST2 80 S Se r ie s
3500
Pea k Half Sine Wave On-st a te C urren t (A)
3000
110100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
RRM
Initia l T = 125°C
J
@ 6 0 Hz 0. 00 8 3 s
@ 5 0 Hz 0. 01 0 0 s
10000
T = 25 ° C
J
Vishay Semiconductors
T = 125°C
J
1000
ST280S Se rie s
Instantaneous On-state Current (A)
100
0.5 1 1.5 2 2.5 3 3.5 4
In st a n t a n e o us O n- sta t e Vo lt a g e ( V )
Fig. 7 - On-State Voltage Drop Characteristics
Revision: 11-Mar-14
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 8 - Thermal Impedance Z
Characteristics
thJC
5
Document Number: 94402
Page 6
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0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IG D
(b)
(a)
Tj =2 5 ° C
Tj = 12 5 ° C
Tj = -4 0 ° C
(1) (2) (3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Fr eq u e n c y Lim it e d b y PG ( A V)
rated di/d t : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
D e v i c e : ST2 8 0S Se r i e s
(4)
ORDERING INFORMATION TABLE
VS-ST280S Series
Vishay Semiconductors
Fig. 9 - Gate Characteristics
Device code
1
2
3
4
5
6
7
8
STVS- 28 0 S 06 P 0 V
- Vishay Semiconductors product
- Thyristor
- Essential part number
- 0 = Converter grade
- S = Compression bonding stud
- Voltage code x 100 = V
- P = Stud base 3/4"-16UNF-2A threads
- 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
9
- V = Glass-metal seal
Note: For metric device M16 x 1.5 contact factory
Dimensions www.vishay.com/doc?95077
Revision: 11-Mar-14
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
LINKS TO RELATED DOCUMENTS
51 32 4 6 7 8 9
(see Voltage Ratings table)
RRM
6
Document Number: 94402
Page 7
DIMENSIONS in millimeters (inches)
Fast-on terminals
White gate
Red shrink
Red cathode
Red silicon rubber
C.S. 0.51 mm
2
(0.0008 s.i.)
Ø 4.3 (0.17)
19 (0.75) MAX.
Ø 8.5 (0.33)
Glass metal seal
Ø 28.5 (1.12)
MAX.
SW 32
C.S. 35 mm
2
(0.054 s.i.)
Flexible lead
3/4"-16UNF-2A
White shrink
AMP. 280000-1
REF-250
238.5 ± 10
(9.39 ± 0.39)
35 (1.38)
MAX.
21 (0.83)
MAX.
28.5 (1.12)
MAX.
16 (0.63) MAX.
75 (2.95)
MIN.
213.5 ± 10
(8.41 ± 0.39)
23 MIN.
4 MAX.
0° to 15°
38 MAX.
Outline Dimensions
Vishay Semiconductors
TO-209AB (TO-93)
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Disclaimer
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