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A-PUK (TO-200AB)
Phase Control Thyristors
(Hockey PUK Version), 410 A
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
Package A-PUK (TO-200AB)
Circuit configuration Single SCR
400 V, 800 V, 1200 V, 1400 V,
1600 V, 1800 V, 2000 V
-40 °C to +125 °C
410 A
1.69 V
90 mA
VS-ST230C Series
Vishay Semiconductors
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-PUK (TO-200AB)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST230C..C
Revision: 27-Sep-17
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VOLTAGE
CODE
04 400 500
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700
18 1800 1900
20 2000 2100
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410 A
T
hs
T
hs
50 Hz 5700
60 Hz 5970
50 Hz 163
60 Hz 149
Typical 100 μs
V
REPETITIVE PEAK AND OFF-STATE
DRM/VRRM
, MAXIMUM
VOLTAGE
V
NON-REPETITIVE PEAK VOLTAGE
1
55 °C
780 A
25 °C
400 to 2000 V
-40 to +125 °C
V
, MAXIMUM
RSM
V
I
DRM/IRRM,
AT T
Document Number: 94398
= TJ MAXIMUM
J
A
kA2s
MAXIMUM
mA
30
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VS-ST230C Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1630 kA2s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Maximum (typical) latching current I
I
T(AV)
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 780
t = 10 ms
t = 8.3 ms 5970
t = 10 ms
t = 8.3 ms 5000
t = 10 ms
t = 8.3 ms 148
t = 10 ms
t = 8.3 ms 105
(16.7 % x x I
(I > x I
(16.7 % x x I
(I > x I
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
), TJ = TJ maximum 0.98
T(AV)
), TJ = TJ maximum 0.81
T(AV)
T(AV)
T(AV)
RRM
< I < x I
< I < x I
Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.69 V
TJ = 25 °C, anode supply 12 V resistive load
Vishay Semiconductors
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 0.92
T(AV)
), TJ = TJ maximum 0.88
T(AV)
410 (165) A
55 (85) °C
5700
4800
163
115
600
1000 (300)
kA
m
mA
A
2
V
s
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
dI/dt
Typical delay time t
Typical turn-off time t
d
q
Gate drive 20 V, 20 , t
T
= TJ maximum, anode voltage 80 % V
J
1 μs
r
DRM
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
, TJ = 25 °C
DRM
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs,
V
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
R
1000 A/μs
1.0
μs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
of off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
I
,
RRM
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/μs
applied 30 mA
Revision: 27-Sep-17
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Document Number: 94398
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VS-ST230C Series
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TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
GM
G(AV)
GM
GM
GM
GT
GT
GD
GD
TJ = TJ maximum, tp 5 ms 10.0
TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
TJ = TJ maximum, tp 5 ms 3.0 A
TJ = TJ maximum, tp 5 ms
TJ = - 40 °C
T
= 25 °C 90 150 mA
J
T
= 125 °C 40 -
J
TJ = - 40 °C 2.9 -
= 25 °C 1.8 3.0
J
T
= 125 °C 1.2 -
J
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum
value which will not trigger any
unit with rated V
cathode applied
Vishay Semiconductors
VALUES
TYP. MAX.
20
5.0
180 -
10 mA
anode to
DRM
0.25 V
UNITS
W
V
VT
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to heatsink
Maximum thermal resistance,
case to heatsink
R
R
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.17
DC operation double side cooled 0.08
DC operation single side cooled 0.033
DC operation double side cooled 0.017
Mounting force, ± 10 %
Approximate weight 50 g
Case style See dimensions - link at the end of datasheet A-PUK (TO-200AB)
R
CONDUCTION
thJC
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS UNITS
180° 0.015 0.017 0.011 0.011
120° 0.018 0.019 0.019 0.019
90° 0.024 0.024 0.026 0.026
60° 0.035 0.035 0.036 0.036
30° 0.060 0.060 0.060 0.061
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
-40 to 125
-40 to 150
4900
(500)
T
= TJ maximum K/W
J
°C
K/W
N
(kg)
Revision: 27-Sep-17
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Document Number: 94398
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Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500
DC
30°
60°
90°
120°
180°
Conduction Period
ST230C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800
DC
30°
60°
90°
120°
180°
Conduction Period
ST230C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
0
100
200
300
400
500
600
700
800
900
1000
1100
0 100 200 300 400 500 600
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
ST230C..C Series
T = 125°C
J
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
0
200
400
600
800
1000
1200
1400
0 200 400 600 800 1000
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
ST230C..C Series
T = 125°C
J
VS-ST230C Series
Vishay Semiconductors
130
120
110
ST230C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
100
90
Conduction Angle
80
70
60
50
30°
60°
90°
120°
180°
40
0 40 80 120 160 200 240 280 320
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
130
120
110
ST230C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W
thJ-hs
100
90
80
Revision: 27-Sep-17
70
60
50
40
30
20
Maximum Allowable Heatsink Temperature (°C)
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30°
60°
0 100 200 300 400 500 600
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
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Conduction Angle
90°
120°
180°
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
4
Document Number: 94398
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VS-ST230C Series
Vishay Semiconductors
5500
5000
4500
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
4000
3500
3000
ST230C..C Series
2500
2000
Peak Half Sine Wave On-state Current (A)
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
1000
Tj = 25°C
6500
Maximum Non Repetitive Surge Current
6000
5500
5000
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial Tj = 125°C
No Voltage Reapplied
Rated Vrrm Reapplied
4500
4000
3500
3000
2500
2000
Peak Half Sine Wave On-state Current (A)
ST230C..C Series
0.01 0.1 1
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Tj = 125°C
Instantaneous On-state Current (A)
ST230C..C Series
100
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
1
Steady State Value
R = 0.17 K/W
thJ-hs
(Single Side Cooled)
thJ-hs
R = 0.08 K/W
0.1
thJ-hs
(Double Side Cooled)
(DC Operation)
0.01
ST230C..C Series
0.001
0.001 0.01 0.1 1 10
Transient Thermal Impedance Z (K/W)
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
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Characteristics
thJ-hs
Document Number: 94398
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VS-ST230C Series
Vishay Semiconductors
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
10
1
VGD
Instantaneous Gate Voltage (V)
0.1
0.001 0.01 0.1 1 10 100
ORDERING INFORMATION TABLE
Device code
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(a)
(b)
Tj=-40
Tj=25
Tj=125
°
C
IGD
Device: ST230C..C Series
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
°
C
°C
Frequency Limited by PG(AV)
(2)
STVS- 23 0 C 20 C 1 -
(3)(1)
(4)
51 32 4 6 7 8 9
1 - Vishay Semiconductors product
2
- Thyristor
3
- Essential part number
- 0 = converter grade
4
- C = ceramic PUK
5
- Voltage code x 100 = V
6
- C = PUK case A-PUK (TO-200AB)
7
8
- 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
(see Voltage Ratings table)
RRM
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
9
- Critical dV/dt:
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95074
Revision: 27-Sep-17
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4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7/14.4
(0.54/0.57)
25° ± 5°
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
42 (1.65) MAX.
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
C
A
G
Note:
A = Anode
C = Cathode
G = Gate
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
A-PUK (TO-200AB)
Revision: 12-Jul-17
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Document Number: 95074
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Revision: 01-Jan-2022
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