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TO-94 (TO-209AC)
Phase Control Thyristors
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
Package TO-94 (TO-209AC)
Circuit configuration Single SCR
400 V, 800 V, 1200 V, 1600 V
-40 °C to +125 °C
(Stud Version), 110 A
FEATURES
•Center gate
• International standard case TO-94 (TO-209AC)
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Hermetic glass-metal case with ceramic insulator
(Glass-metal seal over 1200 V)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
110 A
1.52 V
150 mA
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
VS-ST110SPbF Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 2700
60 Hz 2830
50 Hz 36.4
60 Hz 33.2
Typical 100 μs
110 A
90 °C
175
400 to 1600 V
-40 to +125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST110S
V
VOLTAGE
CODE
04 400 500
08 800 900
12 1200 1300
16 1600 1700
DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
, MAXIMUM REPETITIVE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK VOLTAGE
V
I
DRM/IRRM
T
= TJ MAXIMUM
J
A
kA2s
MAXIMUM AT
mA
20
Revision: 27-Sep-17
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VS-ST110SPbF Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 364 kA2s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
I
T(AV)
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
180° conduction, half sine wave
DC at 85 °C case temperature 175
t = 10 ms
t = 8.3 ms 2830
t = 10 ms
t = 8.3 ms 2380
t = 10 ms
t = 8.3 ms 33.2
t = 10 ms
t = 8.3 ms 23.5
(16.7 % x x I
(I > x I
(16.7 % x x I
(I > x I
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
< I < x I
T(AV)
), TJ = TJ maximum 0.92
T(AV)
< I < x I
T(AV)
), TJ = TJ maximum 1.81
T(AV)
Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 V
TJ = 25 °C, anode supply 12 V resistive load
Vishay Semiconductors
110 A
2700
2270
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 0.90
T(AV)
), TJ = TJ maximum 1.79
T(AV)
36.4
25.8
600
1000
90 °C
kA
m
mA
A
2
V
s
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
dI/dt
Typical delay time t
Typical turn-off time t
d
q
Gate drive 20 V, 20 , t
T
= TJ maximum, anode voltage 80 % V
J
1 μs
r
DRM
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
, TJ = 25 °C
DRM
ITM = 100 A, TJ = TJ maximum, dI/dt = 10 A/μs,
V
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
R
500 A/μs
2.0
μs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
I
,
RRM
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/μs
applied 20 mA
Revision: 27-Sep-17
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Document Number: 94393
Page 3
VS-ST110SPbF Series
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TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
GM
G(AV)
GM
GM
GM
GT
GT
GD
GD
TJ = TJ maximum, tp 5 ms 5
TJ = TJ maximum, f = 50 Hz, d% = 50 1
TJ = TJ maximum, tp 5 ms
TJ = -40 °C
= 25 °C 90 150
J
T
= 125 °C 40 -
J
TJ = -40 °C 2.9 -
= 25 °C 1.8 3.0
J
T
= 125 °C 1.2 -
J
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum
value which will not trigger any
unit with rated V
cathode applied
Vishay Semiconductors
VALUES
TYP. MAX.
2.0 A
20
5.0
180 -
10 mA
DRM
anode to
0.25 V
UNITS
W
V
mAT
VT
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
temperature range
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque, ± 10 %
Approximate weight 130 g
Case style See dimensions - link at the end of datasheet TO-94 (TO-209AC)
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.035 0.025
120° 0.041 0.042
90° 0.052 0.056
60° 0.076 0.079
30° 0.126 0.127
Note
• The table above shows the increment of thermal resistance R
R
R
T
J
Stg
thJC
thCS
-40 to 125
-40 to 150
DC operation 0.195
Mounting surface, smooth, flat and greased 0.08
Non-lubricated threads 15.5 (137)
Lubricated threads 14 (120)
T
= TJ maximum K/W
J
when devices operate at different conduction angles than DC
thJC
(lbf · in)
°C
K/W
Nm
Revision: 27-Sep-17
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80
90
100
110
120
130
0 20406080100120
Maximum Allowable Case Temperature (°C)
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
ST110S Series
R (DC) = 0.195 K/W
thJC
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
1
K/
W
D
e
l
t
a
R
t
h
S
A
0
.
2
K
/
W
0
.
3
K
/
W
0
.
4
K
/
W
0
.
6
K
/
W
0
.
8
K
/
W
1
K
/
W
0
.
5
K
/
W
1
.
2
K
/
W
0
20
40
60
80
100
120
140
160
180
200
220
0 20 40 60 80 100 120 140 160 180
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST110S Series
T = 125°C
J
VS-ST110SPbF Series
Vishay Semiconductors
130
ST110S Series
R (DC) = 1.95 K/W
thJC
120
110
100
30°
Conduction Period
60°
90
80
Maximum Allowable Case Temperature (°C)
0 20 40 60 80 100 120 140 160 1 80
90°
120°
180°
DC
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
160
140
120
100
180°
120°
90°
60°
30°
RMS Limit
80
60
40
20
0
Maximum Average On-state Power Loss (W)
020406080100120
Conduction Angle
ST110S Series
T = 125°C
J
Average On-state Current (A)
0
.
3
0
.
K
4
K
/
W
0
.
5
K
/
W
0
.
6
K
/
W
0
.
8
K
/
W
1
K
/
W
1
.
2
K
/
W
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
0
.
t
2
h
S
K
A
/
/
W
W
=
0
.
1
K
/
W
D
e
l
t
a
R
Fig. 3 - On-State Power Loss Characteristics
Revision: 27-Sep-17
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Fig. 4 - On-State Power Loss Characteristics
4
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Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
10
100
1000
10000
0.5 1.5 2.5 3.5 4.5
Tj = 25˚C
Tj = 125˚C
ST110S Series
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
ST110S Series
Steady State Value
R = 0.195 K/W
(DC Operation)
thJC
VS-ST110SPbF Series
Vishay Semiconductors
2400
At Any Rated Load Condition And With
Rated V Applied Following Surge.
2200
2000
1800
1600
1400
1200
Peak Half Sine Wave On-state Current (A)
1000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
RRM
ST110S Series
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
2800
Maximum Non Repetitive Surge Current
2600
2400
2200
2000
1800
1600
1400
1200
Peak Half Sine Wave On-state Current (A)
1000
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
ST110S Series
0.01 0. 1 1 10
Pulse Train Duration (s)
Initial T = 125°C
J
No Voltage Reapplied
Rated V Reapplied
RRM
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Revision: 27-Sep-17
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Fig. 8 - Thermal Impedance Z
Characteristic
thJC
5
Document Number: 94393
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0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1) (2)
(3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Device: ST110S Series
Rectangular gate pulse
(4)
ORDERING INFORMATION TABLE
VS-ST110SPbF Series
Vishay Semiconductors
Fig. 9 - Gate Characteristics
Device code
STVS- 11 0 S 16 P 0 V L PbF
1 -Vishay Semiconductors product
- Thyristor
2
3
-Essential part marking
- 0 = converter grade
4
5
- S = compression bonding stud
6
- Voltage code x 100 = V
7
- P = stud base 20UNF threads
8
- 0 = eyelet terminals (gate and auxiliary cathode leads)
1 = fast-on terminals (gate and auxiliary cathode leads)
2 = ag terminals (for cathode and gate terminals)
- V = glass-metal seal (only up to 1200 V)
9
None = ceramic housing (over 1200 V)
- Critical dV/dt:
10
None = 500 V/μs (standard value)
L = 1000 V/μs (special selection)
11
- None = standard production
Dimensions www.vishay.com/doc?95078
Revision: 27-Sep-17
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
- PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
51 32 4 6 7 8 9 10 11
(see Voltage Ratings table)
RRM
6
Document Number: 94393
Page 7
TO-209AC (TO-94) for ST110S Series
Fast-on terminals
C.S. 0.4 mm
2
White shrink
Red shrink
Red cathode
Red silicon rubber
Ø 4.3 (0.17)
12.5 (0.49) MAX.
(0.0006 s.i.)
Glass metal seal
Ø 8.5 (0.33)
16.5 (0.65) MAX.
Ø 23.5 (0.93) MAX.
C.S. 16 mm
2
(0.025 s.i.)
Flexible lead
2.6 (0.10) MAX.
29.5 (1.16) MAX.
1/2"-20UNF-2A
SW 27
9.5 (0.37) MIN.
White gate
AMP. 280000-1
REF-250
20 (0.79) MIN.
29 (1.14)
MAX.
21 (0.83)
MAX.
157 (6.18)
170 (6.69)
70 (2.75)
MIN.
215 ± 10
(8.46 ± 0.39)
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
Document Number: 95078 For technical questions, contact: [email protected]
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Revision: 23-Sep-08 1
Page 8
Outline Dimensions
Ceramic housing
1/2"-20UNF-2A
SW 27
Red shrink
Red cathode
Red silicon rubber
12.5 (0.49) MAX.
29 (1.14)
MAX.
21 (0.83)
MAX.
157 (6.18)
170 (6.69)
70 (2.75)
MIN.
Ø 4.3 (0.17)
Ø 8.5 (0.33)
16.5 (0.65) MAX.
29.5 (1.16) MAX.
C.S. 0.4 mm
2
White shrink
(0.0006 s.i.)
Ø 22.5 (0.88) MAX.
White gate
215 ± 10
(8.46 ± 0.39)
C.S. 16 mm
2
(0.025 s.i.)
Flexible lead
2.6 (0.10) MAX.
9.5 (0.37) MIN.
20 (0.79) MIN.
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
TO-209AC (TO-94) for ST110S Series
www.vishay.com For technical questions, contact: [email protected]
Document Number: 95078
2 Revision: 23-Sep-08
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