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VS-ST083SP Series
DataSheet (Vishay)
10 pgs186.93 Kb0

Datasheet VS-ST083SP Series DataSheet (Vishay)

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Inverter Grade Thyristors (Stud Version), 85 A
TO-209AC (TO-94)
PRODUCT SUMMARY
Package TO-209AC (TO-94)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
at 50 Hz 2450 A
TSM
I
at 60 Hz 2560 A
TSM
I
GT
T
C/Ths
85 A
400 V to 1200 V
2.15 V
200 mA
85 °C
VS-ST083SP Series
Vishay Semiconductors
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
 
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 2450 A
60 Hz 2560 A
50 Hz 30
60 Hz 27
Range 10 to 20 μs
85 A
85 °C
135 A
400 to 1200 V
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST083S
V
VOLTAGE
CODE
04 400 500
08 800 900
10 1000 1100
12 1200 1300
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
V
RSM
, MAXIMUM
V
kA2s
I
DRM/IRRM
AT T
MAX.
= TJ MAX.
J
mA
30
Revision: 26-Mar-14
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
Document Number: 94334
Page 2
VS-ST083SP Series
180° el
I
TM
100 μs
I
TM
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CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
50 Hz 210 120 330 270 2540 1930
400 Hz 200 120 350 210 1190 810
1000 Hz 150 80 320 190 630 400
2500 Hz 70 25 220 85 250 100
Recovery voltage V
r
Voltage before turn-on V
d
50 50 50 50 50 50
V
DRM
V
DRM
Rise of on-state current dI/dt 50 50 - - - - A/μs
Case temperature 608560856085°C
Equivalent values for RC circuit 22/0.15 22/0.15 22/0.15 W/μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current at case temperature
Maximum RMS on-state current I
Maximum peak, one half cycle, non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 300 kA2s
Maximum peak on-state voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum holding current I
Typical latching current I
I
T(AV)
T(RMS)
I
TSM
TM
T(TO)1
T(TO)2
t1
t2
H
L
180° conduction, half sine wave
DC at 77 °C case temperature 135
t = 10 ms
t = 8.3 ms 2560
t = 10 ms
t = 8.3 ms 2160
t = 10 ms
t = 8.3 ms 27
t = 10 ms
t = 8.3 ms 19
No voltage reapplied
100 % V reapplied
RRM
No voltage reapplied
100 % V reapplied
RRM
Sinusoidal half wave, initial T
ITM = 300 A, TJ = TJ maximum, tp = 1 0 ms s ine wave pul se 2.1 5 (16.7 % x x I (I > x I
T(AV)
(16.7 % x x I (I > x I
T(AV)
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 1.52
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 2.34
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000
Vishay Semiconductors
V
DRM
85 A
85 °C
2450
2060
= TJ maximum
J
), TJ = TJ maximum 1.46
), TJ = TJ maximum 2.32
30
21
A
V
kA
m
mA
A
2
s
VLow level value of threshold voltage V
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS
Maximum non-repetitive rate of rise of turned on current
Typical delay time t
dI/dt T
d
= TJ max., V
J
= Rated V
DRM
, ITM = 2 x dI/dt 1000 A/μs
DRM
TJ = 25 °C, VDM = Rated VDM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5 source
TJ = TJ maximum, ITM = 100 A,
Maximum turn-off time t
q
Revision: 26-Mar-14
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
commutating dI/dt = 10 A/μs V
= 50 V, tp = 200 μs, dV/dt = 200 V/μs
R
2
VALUES
MIN. MAX.
10 20
Document Number: 94334
UNITS
0.80
μs
Page 3
VS-ST083SP Series
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BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
= TJ maximum, linear to 80 % V
T
Maximum critical rate of rise of off-state voltage dV/dt
Maximum peak reverse and off-state leakage current
I
RRM
I
DRM
J
higher value available on request
,
TJ = TJ maximum, rated V
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage +V
Maximum peak negative gate voltage -V
Maximum DC gate current required to trigger I
Maximum DC gate voltage required to trigger V
Maximum DC gate current not to trigger I
Maximum DC gate voltage not to trigger V
GM
G(AV)
GM
GM
GM
GT
GT
GD
GD
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated V
DRM/VRRM
DRM/VRRM
Vishay Semiconductors
,
DRM
applied 30 mA
applied
500 V/μs
40
5
W
5A
20
5
V
200 mA
3V
20 mA
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case R
Maximum thermal resistance, case to heatsink R
J
Stg
thJC
thCS
DC operation 0.195
Mounting surface, smooth, flat and greased 0.08
Non-lubricated threads
Mounting torque, ± 10 %
Lubricated threads
Approximate weight 130 g
Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.034 0.025
120° 0.041 0.042
T
90° 0.052 0.056
= TJ maximum K/W
J
60° 0.076 0.079
30° 0.126 0.127
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
-40 to 125
-40 to 150
15.5
(137)
14
(120)
(lbf · in)
°C
K/W
N · m
 
Revision: 26-Mar-14
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 94334
Page 4
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ST083S Series R
thJC
(DC) = 0.195 K/W
110
100
90
80
130
030
60
90
Maximum Allowable Case
Temperature (°C)
Average On-State Current (A)
10 40 7020 50 80
120
30° 60° 90° 120° 180°
Ø
Conduction angle
Maximum Allowable Ambient Temperature (°C)
0
20
25 50 75 100 125
40
60
80
100
120
140
160
180
Maximum Average On-State
Power Loss (W)
0.2 K/W
R
thSA
= 0.1 K/W - ΔR
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
Maximum Average On-State
Power Loss (W)
0
50
100
150
200
250
0.2 K/W
R
thSA
= 0.1 K/W - ΔR
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
VS-ST083SP Series
Vishay Semiconductors
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
180
160
140
120
100
80
60
Power Loss (W)
40
Maximum Average On-State
20
0
180° 120°
90° 60° 30°
0 102030405060708090
Average On-State Current (A)
RMS limit
Ø
Conduction angle
ST083S Series
= 125 °C
T
J
130
120
110
100
90
Temperature (°C)
Maximum Allowable Case
80
70
060
ST083S Series
(DC) = 0.195 K/W
R
thJC
Conduction period
30°
60°
90°
120°
180°
20 8040 100
Average On-State Current (A)
Ø
DC
140
120
250
200
150
100
Power Loss (W)
Maximum Average On-State
Revision: 26-Mar-14
50
0
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Fig. 3 - On-State Power Loss Characteristics
DC 180° 120°
90°
60°
30°
20 40 60 80 100 120 1400
Average On-State Current (A)
RMS limit
Ø
Conduction period
ST083S Series
= 125 °C
T
J
Fig. 4 - On-State Power Loss Characteristics
4
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Document Number: 94334
Page 5
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100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
1000
10 000
TJ = 25 °C
TJ = 125 °C
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
ST083S Series
0.01
0.01 0.1 1 100.001
0.1
1
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal Impedance (K/W)
ST083S Series
Steady state value R
thJC
= 0.195 K/W
(DC operation)
VS-ST083SP Series
Vishay Semiconductors
2200
2000
1800
1600
1400
On-State Current (A)
Peak Half Sine Wave
1200
1000
At any rated load condition and with rated V
ST083S Series
1 10 100
applied following surge
RRM
Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
2600
2400
2200
2000
1800
1600
1400
1200
1000
0.01 0.1 1
Peak Half Sine Wave On-State Current (A)
Maximum non repetitive surge current versus pulse train duration. Control of conduction may not be maintained
Initial TJ = 125 °C No voltage reapplied Rated V
ST083S Series
Pulse Train Duration (s)
reapplied
RRM
Fig. 8 - Thermal Impedance Z
160
140
120
100
80
ST083S Series
= 125 °C
T
J
ITM = 500 A
Charge (µC)
60
40
- Maximum Reverse Recovery
rr
Q
20
2010 30 40 50 60 70 80 90 100
ITM = 50 A
dI/dt - Rate of Fall of On-State Current (A/µs)
Characteristic
thJC
ITM = 300 A
ITM = 200 A
ITM = 100 A
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 26-Mar-14
Fig. 7 - On-State Voltage Drop Characteristics
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Fig. 9 - Reverse Recovered Charge Characteristics
120
110
100
90
80
70
60
50
Current (A)
40
30
- Maximum Reverse Recovery
20
rr
I
10
2010 30 40 50 60 70 80 90 100
ITM = 500 A
ST083S Series T
= 125 °C
J
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Reverse Recovery Current Characteristics
5
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ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
Document Number: 94334
Page 6
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10
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit R
s
= 22 Ω
C
s
= 0.15 µF
V
D
= 80 % V
DRM
ST083S Series Trapezoidal pulse T
C
= 60 °C
dI/dt = 50 A/µs
t
p
400
2500
100
1000
1500
2000
3000
200
500
50 Hz
10
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
400
2500
3000
100
1000
1500
2000
200
500
50 Hz
ST083S Series Trapezoidal pulse T
C
= 60 °C
dI/dt = 100 A/µs
t
p
Snubber circuit R
s
= 22 Ω
C
s
= 0.15 µF
V
D
= 80 % V
DRM
10
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
400
2500
100
1000
1500
2000
200
500
50 Hz
Snubber circuit R
s
= 22 Ω
C
s
= 0.15 µF
V
D
= 80 % V
DRM
ST083S Series Trapezoidal pulse T
C
= 85 °C
dI/dt = 100 A/µs
t
p
VS-ST083SP Series
Vishay Semiconductors
10 000
1000
1500
2000
2500
100
3000
Peak On-State Current (A)
10
10 100 1000 10 000
Pulse Basewidth (µs)
1000
500
t
p
Snubber circuit
= 22 Ω
R
s
= 0.15 µF
C
s
= 80 % V
V
D
400
200
100
DRM
50 Hz
ST083S Series Sinusoidal pulse
= 60 °C
T
C
10 000
1000
100
Peak On-State Current (A)
10
Fig. 11 - Frequency Characteristics
10 000
1000
Snubber circuit
= 22 Ω
R
s
= 0.15 µF
C
s
= 80 % V
V
1500
2000
2500
3000
D
1000
400
500
200
DRM
50 Hz
100
ST083S Series Sinusoidal pulse
t
p
= 85 °C
T
C
10 100 1000 10 000
Pulse Basewidth (µs)
ST083S Series Trapezoidal pulse T
t
p
dI/dt = 50 A/µs
500
= 85 °C
C
Snubber circuit
= 22 Ω
R
s
= 0.15 µF
C
s
= 80 % V
V
D
50 Hz
DRM
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1500
100
Peak On-State Current (A)
2000
10
10 100 1000 10 000
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
6
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400
1000
2500
Pulse Basewidth (µs)
Document Number: 94334
200
100
Page 7
10 000
Pulse Basewidth (µs)
20 joules per pulse
0.1
t
p
10 100 1000 10 000
0.2
0.3
0.5
1
2
4
7.5
Peak On-State Current (A)
10
100
1000
10 000
ST083S Series Rectangular pulse dI/dt = 50 A/µs
1000
100
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2
1
0.5
0.3
0.2
0.1
20 joules per pulse
10
5
3
VS-ST083SP Series
Vishay Semiconductors
Peak On-State Current (A)
10
10 100 1000 10 000
ST083S Series Sinusoidal pulse
t
p
Pulse Basewidth (µs)
100
Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; t b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω
10
≤ 1 µs
t
r
1
Instantaneous Gate Voltage (V)
0.1
0.001
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
(1) PGM = 10 W, tp = 20 ms
= 20 W, tp = 10 ms
(2) P
≤ 1 µs
r
GM
= 40 W, tp = 5 ms
(3) P
GM
= 60 W, tp = 3.3 ms
(4) P
GM
(a)
(b)
T
J
T
J
= 25 °C
= 40 °C
Frequency limited by P
(1) (2)
G(AV)
(3)
(4)
T
J
= 125 °C
V
GD
I
GD
Device: ST083S Series
0.01 0.1 1 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Revision: 26-Mar-14
For technical questions within your region: [email protected]
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7
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Document Number: 94334
Page 8
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- Thyristor
1 - Vishay Semiconductors product
2
- Essential part number
3
- 3 = Fast turn-off
4
- S = Compression bonding stud
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
7
- Reapplied dV/dt code (for tq test condition)
8
-tq code
9
- Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
dV/dt - tq combinations available
dV/dt (V/µs)
t
q
(µs) 10
up to 800V
only for 1000/1200 V
11
- None = Standard production; P = Lead (Pb)-free
12
10
200
FN
FK
20
20
t
q
(µs)
FK
Device code
51
32 4
6 7 8 9 11 1210
STVS- 08 3 S 12 P F N 0 L P
6
- P = Stud base 1/2"-20UNF-2A threads
M = Metric M12, contact factory for availability
- 0 = Eyelet terminals (gate and aux. cathode leads)
1 = Fast-on terminals (gate and aux. cathode leads)
2 = Flag terminals (gate and aux. cathode leads)
ORDERING INFORMATION TABLE
VS-ST083SP Series
Vishay Semiconductors
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95003
Revision: 26-Mar-14
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
8
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Document Number: 94334
Page 9
TO-209AC (TO-94) for ST083S and ST103S Series
Ceramic housing
1/2"-20UNF-2A
SW 27
Red shrink
Red cathode
Red silicon rubber
12.5 (0.49) MAX.
29 (1.14)
MAX.
21 (0.83)
MAX.
157 (6.18)
170 (6.69)
70 (2.75)
MIN.
Ø 4.3 (0.17)
Ø 8.5 (0.33)
16.5 (0.65) MAX.
29.5 (1.16) MAX.
C.S. 0.4 mm
2
White shrink
(0.0006 s.i.)
Ø 22.5 (0.88) MAX.
White gate
215 ± 10
(8.46 ± 0.39)
C.S. 16 mm
2
(0.025 s.i.)
Flexible lead
2.6 (0.10) MAX.
9.5 (0.37) MIN.
20 (0.79) MIN.
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
Document Number: 95003 For technical questions, contact: [email protected]
www.vishay.com
Revision: 30-Sep-08 1
Page 10
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Revision: 02-Oct-12
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