Datasheet VS-MURB2020CTPbF, VS-MURB2020CT-1PbF DataSheet (Vishay)

A

VS-MURB2020CTPbF, VS-MURB2020CT-1PbF

Vishay High Power Products

VS-MURB2020CTPbF

Base

common

cathode

2

3

2

1

node

1

Common

D

cathode

2

PAK

Anode

2

PRODUCT SUMMARY

t

rr

I

F(AV)

V

R

Ultrafast Rectifier, 2 x 10 A FRED Pt

VS-MURB2020CT-1PbF

Base

common

cathode

2

3

2

1

Anode

1

Common

cathode

Anode

2

TO-262

25 ns

2 x 10 A

200 V

FEATURES

• Ultrafast recovery time

• Low forward voltage drop

• Low leakage current

• 175 °C operating junction temperature

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Halogen-free according to IEC 61249-2-21
definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

DESCRIPTION/APPLICATIONS

MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

®

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Peak repetitive reverse voltage V

Average rectified forward current

per leg

total device Rated V

Non-repetitive peak surge current per leg I

Peak repetitive forward current per leg I

Operating junction and storage temperatures T

RRM

I

F(AV)

FSM

, T

J

FM

, TC = 145 °C 20

R

Rated VR, square wave, 20 kHz, TC = 145 °C 20

Stg

200 V

10

100

- 65 to 175 °C

A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

Document Number: 94083 For technical questions, contact: [e-mail]
Revision: 08-Apr-10 1

,

V

BR

V

R

F

R

S

IR = 100 μA 200 - -

IF = 8 A, TJ = 125 °C - - 0.85

= 16 A - - 1.15

I

F

I

= 16 A, TJ = 125 °C - - 1.05

F

VR = VR rated - - 15

T

= 150 °C, VR = VR rated - - 250

J

VR = 200 V - 55 - pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

V

μA

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VS-MURB2020CTPbF, VS-MURB2020CT-1PbF

Vishay High Power Products

Ultrafast Rectifier,

2 x 10 A FRED Pt

®

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

= 0.5 A, IR = 1.0 A, I

I

F

T

= 25 °C

J

= 125 °C - 35 -

T

J

TJ = 25 °C - 1.9 -

T

= 125 °C - 4.8 -

J

TJ = 25 °C - 25 -

rr

T

= 125 °C - 78 -

J

= 0.25 A - - 25

REC

-21-

= 10 A

I

F

dI

/dt = 200 A/μs

F

= 160 V

V

R

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and
storage temperature range

Thermal resistance,
junction to case per leg

Thermal resistance,
junction to ambient per leg

Thermal resistance,
case to heatsink

Weight

Mounting torque

Marking device

, T

T

J

Stg

R

--2.5

thJC

R

thJA

R

thCS

Mounting surface, flat, smooth and
greased

- 65 - 175 °C

--50

-0.5-

-2.0- g

-0.07- oz.

Case style D

6.0

(5.0)

2

PAK MURB2020CT

-

12

(10)

Case style TO-262 MURB2020CT-1

kgf · cm

(lbf · in)

ns

A

nC

°C/W

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Document Number: 94083

2 Revision: 08-Apr-10

VS-MURB2020CTPbF, VS-MURB2020CT-1PbF

100

10

1

0.1

- Instantaneous Forward Current (A)

F

I

94083_01

0

0.8

VF - Forward Voltage Drop (V)

TJ = 175 °C

= 125 °C

T

J

= 25 °C

T

J

1.6

Ultrafast Rectifier,

2 x 10 A FRED Pt

2.00.4 1.2

94083_02

®

100

0.1

- Reverse Current (μA)

0.01

R

I

0.001

10

Vishay High Power Products

TJ = 175 °C

TJ = 150 °C

1

0

VR - Reverse Voltage (V)

TJ = 125 °C

TJ = 100 °C

TJ = 25 °C

100 150

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

1000

200 25050

10

1

0.1

- Thermal Impedance (°C/W)

thJC

Z

0.01

0.00001

94083_04

Single pulse

(thermal resistance)

100

- Junction Capacitance (pF)

T

C

10

1

94083_03

VR - Reverse Voltage (V)

TJ = 25 °C

10 100 1000

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

P

DM

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

t

1

t

2

1/t2

+ T

thJC

C

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

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Revision: 08-Apr-10 3

VS-MURB2020CTPbF, VS-MURB2020CT-1PbF

Vishay High Power Products

180

170

160

150

Square wave (D = 0.50)

applied

Rated V

R

140

130

See note (1)

0

3

I

- Average Forward Current (A)

F(AV)

69

Allowable Case Temperature (°C)

94083_05

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

15

12

9

6

3

Average Power Loss (W)

DC

DC

12 15

RMS limit

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

Ultrafast Rectifier,

2 x 10 A FRED Pt

(ns)

rr

t

94083_07

250

200

150

(nC)

rr

Q

100

®

50

40

30

20

IF = 20 A

10

= 10 A

I

F

I

= 5 A

F

0

100

Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt

VR = 160 V

= 125 °C

T

J

= 25 °C

T

J

IF = 20 A

= 10 A

I

F

= 5 A

I

F

50

VR = 160 V

= 125 °C

T

J

= 25 °C

T

J

dIF/dt (A/μs)

1000

0

94083_06

39

0

I

- Average Forward Current (A)

F(AV)

Fig. 6 - Forward Power Loss Characteristics

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

6

x VFM at (I

F(AV)

REV

) x R

12

;

thJC

/D) (see fig. 6);

F(AV)

15

94083_08

R

0

100

dIF/dt (A/μs)

Fig. 8 - Typical Stored Charge vs. dI

1000

/dt

F

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Document Number: 94083

4 Revision: 08-Apr-10

VS-MURB2020CTPbF, VS-MURB2020CT-1PbF

Ultrafast Rectifier,

2 x 10 A FRED Pt

L = 70 μH

dIF/dt
adjust

Fig. 9 - Reverse Recovery Parameter Test Circuit

I

F

0

(1)

(1) dI

/dt - rate of change of current

F

through zero crossing

- peak reverse recovery current

(2) I

RRM

- reverse recovery time measured

(3) t

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

Fig. 10 - Reverse Recovery Waveform and Definitions

dIF/dt

RRM

G

®

Vishay High Power Products

= 200 V

V

R

0.01 Ω

D.U.T.

D

IRFP250

S

(3)

t

rr

t

a

(2)

I

RRM

t

b

(4)

Q

rr

0.5 I

RRM

dI

/dt

(rec)M

0.75 I

RRM

(4) Q

- area under curve dened by t

rr

and I

RRM

trr x I

(5) dI
current during t

=

Q

rr

/dt - peak rate of change of

(rec)M

portion of t

b

(5)

rr

RRM

2

rr

Document Number: 94083 For technical questions, contact: [e-mail]

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Revision: 08-Apr-10 5

VS-MURB2020CTPbF, VS-MURB2020CT-1PbF

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

VS- MUR B 20 20 CT -1 TRL PbF

1 - HPP product suffix

- Ultrafast MUR series

2

- B = D

3

4 - Current rating (20 = 20 A)

- Voltage rating (20 = 200 V)

5

- CT = Center tap (dual) TO-220/D

6

7

8

9

-1 = TO-262

-

None = D

-

None = Tube (50 pieces)

TRL = Tape and reel (left oriented, for D

TRR = Tape and reel (right oriented, for D

-

PbF = Lead (Pb)-free

P = Lead (Pb)-free (for D

Ultrafast Rectifier,

2 x 10 A FRED Pt

324

2

PAK/TO-262

2

PAK

51

®

6789

2

PAK/TO-262

2

PAK package)

2

PAK package)

2

PAK TRR and TRL)

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95014

Part marking information www.vishay.com/doc?95008

Packaging information www.vishay.com/doc?95032

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6 Revision: 08-Apr-10

Document Number: 94083

D2PAK, TO-262

DIMENSIONS FOR D2PAK in millimeters and inches

Outline Dimensions

Vishay High Power Products

Conforms to JEDEC outline D

(2)(3)

E

(3)

L1

D

L2

2 x

Lead assignments

Diodes

1. - Anode (two die)/open (one die)

2., 4. - Cathode

3. - Anode

4

132

BB

e

2

H

2 x b2

2 x b

0.010

PAK (SMD-220)

A

Detail A

(2)

C

MM

A

Lead tip

B

A

c2

AA

A

c

M

± 0.004

B

Gauge

0° to 8°

plane

L3

B

L

L4

Detail “A”

Rotated 90 °CW

Scale: 8:1

(E)

E1

View A - A

A1

(3)

(D1)

17.90 (0.70)

15.00 (0.625)

2.32

(0.08)

Plating

Seating

plane

2.64 (0.103)

2.41 (0.096)

(3)

H

B

Pad layout

11.00
MIN.

(0.43)

MIN.

(4)

b1, b3

(c)

(b, b2)

Section B - B and C - C

Scale: None

9.65

(0.38)

3.81

(0.15)

c1

MIN.

MIN.

Base
Metal

(4)

SYMBOL

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3

A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3

b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3

b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3

c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5 M-1994

(2)

Dimension D and E do not include mold flash. Mold flash shall not

(7)

Outline conforms to JEDEC outline TO-263AB

exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body

(3)

Thermal pad contour optional within dimension E, L1, D1 and E1

(4)

Dimension b1 and c1 apply to base metal only

(5)

Datum A and B to be determined at datum plane H

(6)

Controlling dimension: inch

Document Number: 95014 For technical questions concerning discrete products, contact: [e-mail]
Revision: 31-Mar-09 For technical questions concerning module products, contact: [e-mail]

NOTES

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1

Outline Dimensions

Vishay High Power Products

D2PAK, TO-262

DIMENSIONS FOR TO-262 in millimeters and inches

Modified JEDEC outline TO-262

(Datum A)

(3)

L1

D

(2) (3)

E

1

L2

B

B

2 x e

MM

0.010 A B

Lead tip

A

2

3

C

C

L

(2)

3 x b2

3 x b

Lead assignments

Diodes

1. - Anode (two die)/open (one die)

2., 4. - Cathode

3. - Anode

c

A

c2

A1

B

A

Seating

plane

A

E

E1

Section A - A

Plating

(4)

b1, b3

c

(b, b2)

Section B - B and C - C

Scale: None

(3)

Base
metal

c1

(3)D1

(4)

SYMBOL

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190

A1 2.03 3.02 0.080 0.119

b 0.51 0.99 0.020 0.039

b1 0.51 0.89 0.020 0.035 4

b2 1.14 1.78 0.045 0.070

b3 1.14 1.73 0.045 0.068 4

c 0.38 0.74 0.015 0.029

c1 0.38 0.58 0.015 0.023 4

c2 1.14 1.65 0.045 0.065

D 8.51 9.65 0.335 0.380 2

D1 6.86 8.00 0.270 0.315 3

E 9.65 10.67 0.380 0.420 2, 3

E1 7.90 8.80 0.311 0.346 3

e 2.54 BSC 0.100 BSC

L 13.46 14.10 0.530 0.555

L1 - 1.65 - 0.065 3

L2 3.56 3.71 0.140 0.146

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Dimension D and E do not include mold flash. Mold flash shall not
exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body

(3)

Thermal pad contour optional within dimension E, L1, D1 and E1

(4)

Dimension b1 and c1 apply to base metal only

(5)

Controlling dimension: inches

(6)

Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline

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2 For technical questions concerning module products, contact: [e-mail]

NOTES

Document Number: 95014

Revision: 31-Mar-09

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