Datasheet VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF DataSheet (Vishay)

D-PAK (TO-252AA)

VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF

Vishay Semiconductors

Schottky Rectifier, 3.0 A

Base

cathode

4, 2

FEATURES

• Popular D-PAK outline

• Small foot print, surface mountable

• Low forward voltage drop

1

Anode

3

Anode

• High frequency operation

• Guard ring for enhanced ruggedness and long term
reliability

PRODUCT SUMMARY

Package D-PAK (TO-252AA)

I

F(AV)

V

R

V

at I

F

F

I

RM

T

max. 150 °C

J

Diode variation Single die

E

AS

3.0 A

20 V, 30 V, 40 V

0.49 V

20 mA at 125 °C

8 mJ

• Compliant to RoHS Directive 2002/95/EC

• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C

DESCRIPTION

The VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
surface mount Schottky rectifier has been designed for
applications requiring low forward drop and small foot prints
on PC boards. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Rectangular waveform 3.0 A

20 to 40 V

tp = 5 μs sine 490 A

3 Apk, TJ = 125 °C 0.49 V

- 40 to 150 °C

Document Number: 94313 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 [e-mail]

VOLTAGE RATINGS

PARAMETER SYMBOL VS-MBRD320PbF VS-MBRD330PbF VS-MBRD340PbF UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

20 30 40 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Non-repetitive avalanche energy E

Repetitive avalanche current I

F(AV)

I

FSM

AR

AS

50 % duty cycle at TL = 133 °C, rectangular waveform 3.0

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse 75

TJ = 25 °C, IAS = 1 A, L = 16 mH 8.0 mJ

Current decaying linearly to zero in 1 μs
Frequency limited by T

, [e-mail], [e-mail] 1

maximum VA = 1.5 x VR typical

J

Following any rated load
condition and with rated
V

applied

RRM

490

1.0 A

A

dP

tot

dT

J

-------------

1

R

thJA

--------------<

VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF

Vishay Semiconductors

Schottky Rectifier, 3.0 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS

3 A

Maximum forward voltage drop
See fig. 1

V

FM

6 A 0.58 0.7

(1)

3 A

6 A 0.55 0.625

Maximum reverse leakage current
See fig. 2

I

RM

Typical junction capacitance C

Typical series inductance L

TJ = 25 °C

(1)

T

= 125 °C 10.7 20

J

VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 189 - pF

T

Measured lead to lead 5 mm from package body 5.0 - nH

S

Maximum voltage rate of change dV/dt Rated V

T

= 25 °C

J

= 125 °C

T

J

V

= Rated V

R

R

R

0.48 0.6

0.41 0.49

0.02 0.2

- 10 000 V/μs

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Approximate weight

Marking device Case style D-PAK (similar to TO-252AA)

Note

(1)

thermal runaway condition for a diode on its own heatsink

(1)

J

Stg

R

thJC

R

thJA

DC operation
See fig. 4

- 40 to 150

- 40 to 175

6.0

80

°C

°C/W

0.3 g

0.01 oz.

MBRD320

MBRD330

MBRD340

V

mA

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0.1

100

10

I

F

- Instantaneous Forward Current (A)

V

FM

- Forward Voltage Drop (V)

0.2 0.4 0.8

1.2

0.6 1.0

0

1

TJ = 150 °C
T

J

= 125 °C

T

J

= 25 °C

10

100

1000

C

T

- Junction Capacitance (pF)

VR - Reverse Voltage (V)

10515202535404530

0

TJ = 25 °C

VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF

Schottky Rectifier, 3.0 A

100

10

1

0.1

- Reverse Current (mA)

0.01

R

I

0.001

Vishay Semiconductors

TJ = 150 °C

= 125 °C

T

J

= 100 °C

T

J

T

= 75 °C

J

T

= 50 °C

J

= 25 °C

T

J

1051520 4025 30 350

V

- Reverse Voltage (V)

R

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

10

1

- Thermal Impedance (°C/W)

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Revision: 14-Jan-11 [e-mail]

thJC

Z

0.1

0.00001

Single pulse

(thermal resistance)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

D = 0.75

0.0001

D = 0.50
D = 0.33
D = 0.25
D = 0.20

0.001

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

0.01

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

, [e-mail], [e-mail] 3

P

DM

t

1

t

2

1/t2

+ T

thJC

C

0.1

1

100

110

120

130

140

160

150

Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

21 345

0

DC

See note (1)

Square wave (D = 0.50)
80 % rated V

R

applied

VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF

Vishay Semiconductors

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

1000

Schottky Rectifier, 3.0 A

2.5

2.0

1.5

1.0

0.5

Average Power Loss (W)

0

0

Fig. 6 - Forward Power Loss Characteristics

RMS limit

1345

I

F(AV)

2

- Average Forward Current (A)

DC

D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V

REV

100

At any rated load condition
and with rated V
following surge

- Non-Repetitive Surge Current (A)

10

FSM

I

10

tp - Square Wave Pulse Duration (µs)

Fig. 7 - Maximum Non-Repetitive Surge Current

) x R

x VFM at (I

F(AV)

REV

;

thJC

/D) (see fig. 6);

F(AV)

applied

RRM

100 1000

R

10 000

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2 - Schottky MBR series

1 - Vishay Semiconductors product

3

- D = TO-252AA (D-PAK)

4

- Current rating (3 = 3 A)

5

- Voltage ratings

20 = 20 V
30 = 30 V
40 = 40 V

6

-

None = Tube (50 pieces)

TR = Tape and reel

TRL = Tape and reel (left oriented)

TRR = Tape and reel (right oriented)

- PbF = Lead (Pb)-free

7

Device code

51 32 4 6 7

MBRVS- D 3 40 TR PbF

VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF

ORDERING INFORMATION TABLE

Schottky Rectifier, 3.0 A

Vishay Semiconductors

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95016

Part marking information www.vishay.com/doc?95059

Packaging information www.vishay.com/doc?95033

Document Number: 94313 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 [e-mail]

, [e-mail], [e-mail] 5

D-PAK (TO-252AA)

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay High Power Products

Ø 2

(2) L5

b2

SYMBOL

(5)

(3)

3

A

L3 (3)

D (5)

b

0.010

Lead tip

0.010

B

L4

M

M

CAB

Detail “C”

CAB

Rotated 90 °CW

Ø 1

Detail “C”

Scale: 20:1

Gauge

plane

L2

E

b3

4

1

2

e

2 x

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

C

A

c2

A

Seating
plane

Ø

c

(L1)

C

C

L

D1

H

3241

A

A1

NOTES SYMBOL

E1

0.488 (12.40)

0.409 (10.40)

0.06

(1.524)

0.093 (2.38)

0.085 (2.18)

H

(7)

C

Seating

plane

MILLIMETERS INCHES

MIN.

Pad layout

0.265
MIN.

(6.74)

0.245
(6.23)

0.089
(2.28)

NOTES

A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC

A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410

b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070

b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.

b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC

c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3

c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040

D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2

D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10°

E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15°

E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension uncontrolled in L5

(3)

Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad

(4)

Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip

(5)

Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(6)

Dimension b1 and c1 applied to base metal only

(7)

Datum A and B to be determined at datum plane H

(8)

Outline conforms to JEDEC outline TO-252AA

MIN.

MIN.

Document Number: 95016 For technical questions concerning discrete products, contact: [e-mail]
Revision: 04-Nov-08 For technical questions concerning module products, contact: [e-mail]

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