Datasheet VS-MBRB1635PbF, VS-MBRB1645PbF DataSheet (Vishay)

Page 1
PRODUCT SUMMARY
D2PAK
Anode
1
3
Base
cathode
2
N/C
I
F(AV)
V
R
I
RM
VS-MBRB1635PbF, VS-MBRB1645PbF
Schottky Rectifier, 16 A
• 150 °C TJ operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
16 A
35 V/45 V
40 mA at 125 °C
DESCRIPTION
This VS-MBRB16... Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 16 A
35/45 V
tp = 5 μs sine 1800 A
16 Apk, TJ = 125 °C 0.57 V
- 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRB1635PbF VS-MBRB1645PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
35 45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Non-repetitive peak surge current I
Non-repetitive avalanche energy E
Repetitive avalanche current I
Document Number: 94304 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 23-Jun-10 DiodesAmericas@vishay.com
F(AV)
FSM
AS
AR
TC = 134 °C, rated V
5 μs sine or 3 μs rect. pulse
Surge applied at rated load condition halfwave single phase 60 Hz
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH 24 mJ
Current decaying linearly to zero in 1 μs Frequency limited by T
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R
Following any rated load condition and with rated V
maximum VA = 1.5 x VR typical
J
RRM
applied
16
1800
150
3.6 A
A
Page 2
VS-MBRB1635PbF, VS-MBRB1645PbF
Vishay Semiconductors
Schottky Rectifier, 16 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
= 25 °C 0.63
T
(1)
Maximum forward voltage drop V
Maximum instantaneous reverse current
I
RM
Maximum junction capacitance C
Typical series inductance L
FM
T
S
16 A
TJ = 25 °C
(1)
T
= 125 °C 40
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 1400 pF
Measured lead from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
J
T
= 125 °C 0.57
J
Rated DC voltage
0.2
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case
Typical thermal resistance, case to heatsink
R
R
J
Stg
thJC
thCS
DC operation 1.50
Mounting surface, smooth and greased 0.50
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style D
2
PAK MBRB1645
- 65 to 150
- 65 to 175
2g
0.07 oz.
kgf · cm
(lbf · in)
V
mA
°C
°C/W
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Page 3
1
10
100
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.8 1.0
1.2
0
TJ = 150 °C T
J
= 125 °C
T
J
= 25 °C
VS-MBRB1635PbF, VS-MBRB1645PbF
Schottky Rectifier, 16 A
100
10
1.0
0.1
0.01
- Reverse Current (mA)
0.001
R
I
0.0001
0
T
Vishay Semiconductors
TJ = 150 °C
= 125 °C
T
J
= 100 °C
J
T
= 50 °C
J
1051520
V
- Reverse Voltage (V)
R
= 75 °C
T
J
= 25 °C
T
J
25 30 35
40
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
45
1000
- Junction Capacitance (pF)
T
C
100
0
TJ = 25 °C
10 20 40 5030
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
Single pulse
0.01
(thermal resistance)
- Thermal Impedance (°C/W)
thJC
Z
0.001
0.00001 0.0001 0.001 0.01 0.1 1
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
P
DM
t
1
t
2
1/t2
+ T
thJC
C
10
Document Number: 94304 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 23-Jun-10 DiodesAmericas@vishay.com
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Page 4
120
125
130
135
140
145
150
155
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
10 5 15 20
25
0
DC
See note (1)
Square wave (D = 0.50) Rated V
R
applied
Current monitor
High-speed
switch
D.U.T.
R
g
= 25 Ω
+
Freewheel
diode
V
d
= 25 V
L
IRFP460
40HFL40S02
VS-MBRB1635PbF, VS-MBRB1645PbF
Vishay Semiconductors
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
10 000
Schottky Rectifier, 16 A
15
10
5
Average Power Loss (W)
0
At any rated load condition and with rated V following surge
RRM
applied
RMS limit
DC
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
0
51015 2520
I
- Average Forward Current (A)
F(AV)
Fig. 6 - Forward Power Loss Characteristics
1000
- Non-Repetitive Surge Current (A)
100
FSM
I
10
100 1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94304 4 DiodesAmericas@vishay.com
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR applied
REV
REV
x VFM at (I
F(AV)
) x R
;
thJC
/D) (see fig. 6);
F(AV)
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Page 5
VS-MBRB1635PbF, VS-MBRB1645PbF
Schottky Rectifier, 16 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
SPICE model www.vishay.com/doc?95407
VS- MBR B 16 45 TRL PbF
51324
67
1 - HPP product suffix
2 - Essential part number
3
-
B = Surface mount
- Current rating (16 = 16 A)
4
- Voltage code = V
5
-
6
7
None = Tube (50 pieces)
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
-
- PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
RRM
35 = 35 V 45 = 45 V
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Page 6
DIMENSIONS in millimeters and inches
c
B
Detail A
c2
AA
A
± 0.004
B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c)
c1
Base Metal
Plating
Conforms to JEDEC outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010
A
B
MM
(3)
e
2 x
Pad layout
MIN.
11.00 (0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Outline Dimensions
Vishay Semiconductors
D2PAK
SYMBOL
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Document Number: 95046 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 31-Mar-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Dimensioning and tolerancing per ASME Y14.5 M-1994 Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body Thermal pad contour optional within dimension E, L1, D1 and E1 Dimension b1 and c1 apply to base metal only Datum A and B to be determined at datum plane H Controlling dimension: inch Outline conforms to JEDEC outline TO-263AB
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
This document is subject to change without notice.
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MILLIMETERS INCHES
www.vishay.com/doc?91000
NOTES
Page 7
Legal Disclaimer Notice
Vishay

Disclaimer

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