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VSKT162-16PBF
Specification
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Datasheet VSKT162-16PBF Specification

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Page 1
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI2O3)
New INT-A-PAK
• 3500 V
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in three basic configurations
• Simple mounting
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for multiple level
isolating voltage
RMS
APPLICATIONS
PRODUCT SUMMARY
I
T(AV)
135 A to 160 A
• DC motor control and drives
• Battery charges
• Welders
• Power converters
• Lighting control
• Heat and temperature control
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VSK.136.. VSK.142.. VSK.162.. UNITS
I
T(AV)
I
T(RMS)
I
TSM
t
I
√t 515.5 1013 1190 kA2√s
I
V
RRM
T
J
85 °C 135 140 160 A
300 310 355
50 Hz 3200 4500 4870
60 Hz 3360 4712 5100
50 Hz 51.5 102 119
60 Hz 47 92.5 108
Range 400 to 1600 V
Range - 40 to 125 °C
ELECTRICAL SPECIFICATIONS
A
kA2s
VOLTAGE RATINGS
V
TYPE NUMBER
VSK.136 VSK.142 VSK.162
Document Number: 94513 For technical questions, contact: [email protected] Revision: 04-May-10 1
VOLTAGE
CODE
04 400 500
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700
RRM/VDRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM/VDSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
I
RRM/IDRM
AT 125 °C
V
mA
50
www.vishay.com
Page 2
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VSK.136 VSK.142 VSK.162 UNITS
Maximum average on-state current at case temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle on-state, non-repetitive surge current
Maximum I
Maximum I
t for fusing I2t
√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 515.5 1013 1190 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop V
Maximum forward voltage drop V
Maximum holding current I
Maximum latching current I
I
T(AV)
I
TSM
T(TO)1
T(TO)2
r
t1
r
t2
TM
FM
H
180° conduction, half sine wave
As AC switch 300 310 355
t = 10 ms
t = 8.3 ms 3360 4712 5100
t = 10 ms
t = 8.3 ms 2800 3963 4300
t = 10 ms
t = 8.3 ms 47 92.5 108
t = 10 ms
t = 8.3 ms 33.3 65.4 76.7
(16.7 % x π x I (I > π x I
(16.7 % x π x I
(I > π x I
ITM = π x I
ITM = π x I
No voltage reapplied
100 % V
RRM
RRM
Sine half wave, initial T
=
J
T
maximum
J
reapplied
No voltage reapplied
100 % V reapplied
< I < π x I
T(AV)
), TJ maximum 1.05 1 0.98
T(AV)
< I < π x I
T(AV)
), TJ maximum 1.65 1.43 1.38
T(AV)
, TJ = 25 °C, 180° conduction 1.57 1.55 1.54 V
T(AV)
, TJ = 25 °C, 180° conduction 1.57 1.55 1.54 V
T(AV)
), TJ maximum 0.86 0.83 0.8
T(AV)
), TJ maximum 2.02 1.78 1.67
T(AV)
Anode supply = 6 V initial IT = 30 A, TJ = 25 °C 200 Anode supply = 6 V resistive load = 1 Ω
Gate pulse: 10 V, 100 μs, T
= 25 °C
J
135 140 160 A
85 85 85 °C
3200 4500 4870
2700 3785 4100
51.5 102 119
36.5 71.6 84
400
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical delay time t
Typical rise time t
Typical turn-off time t
gd
TJ = 25 °C
gr
ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum
q
V
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω
R
Gate current = 1 A, dl V
= 0.67 % V
d
DRM
/dt = 1 A/μs
g
1
2
50 to 200
μs
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and off-state leakage current
RMS insulation voltage V
Critical rate of rise of off-state voltage
www.vishay.com For technical questions, contact: [email protected] 2 Revision: 04-May-10
I
RRM
I
DRM
INS
dV/dt
,
TJ = 125 °C 50 mA
50 Hz, circuit to base, all terminals shorted, t = 1 s
T
= TJ maximum,
J
exponential to 67 % rated V
DRM
3500 V
1000 V/μs
Document Number: 94513
Page 3
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Vishay High Power Products
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak gate current I
Maximum peak negative gate voltage
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
Maximum rate of rise of turned-on current
G(AV)
GM
- V
V
I
V
I
GD
dI/dt T
tp ≤ 5 ms, TJ = TJ maximum 12
GM
f = 50 Hz, TJ = TJ maximum 3
tp ≤ 5 ms, TJ = TJ maximum
GT
TJ = - 40 °C
= 25 °C 2.5
T
GT
GT
GD
J
T
= TJ maximum 1.7
J
TJ = - 40 °C 270
= 25 °C 150
J
T
= TJ maximum 80
J
TJ = TJ maximum, rated V
= TJ maximum, ITM = 400 A rated V
J
Anode supply = 6 V, resistive load; R
applied
DRM
= 1 Ω
a
applied 300 A/μs
DRM
W
3A
10
4
V
mAT
0.3 V
10 mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case per junction
Maximum thermal resistance, case to heatsink per module
Mounting torque ± 10 %
IAP to heatsink
busbar to IAP
Approximate weight
T
J
- 40 to 125
°C
T
Stg
R
thJC
DC operation 0.18 0.16
- 40 to 150
K/W
R
thCS
Mounting surface, smooth, flat and greased 0.05
A mounting compound is recommended and the
4 to 6 Nm
torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads.
200 g
7.1 oz.
Case style New INT-A-PAK
ΔR CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
MAXIMUM
AT T
DEVICES
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.136 0.007 0.01 0.013 0.0155 0.017 0.009 0.012 0.014 0.015 0.017
VSK.162 0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040
Note
• Table shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
Document Number: 94513 For technical questions, contact: [email protected] Revision: 04-May-10 3
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
UNITS
K/WVSK.142 0.0019 0.0019 0.0020 0.0020 0.0021 0.0018 0.0022 0.0023 0.0023 0.0020
www.vishay.com
Page 4
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products
130
120
110
100
90
80
70
Maximum Allowable Case Temperature (°C)
0 20 40 60 80 100 120 140
Fig. 1 - Current Ratings Characteristics
130
120
110
100
90
80
Maximum Allowable Case Temperature (°C)
70
0 50 100 150 200 250
Fig. 2 - Current Ratings Characteristics
VSK.136.. Series R
(DC) = 0.18 K/W
thJC
Conduction Angle
30°
60°
90°
120°
180°
Average Forward Current (A)
VSK.136.. Series R
(DC) = 0.18 K/W
thJC
Conduction Period
30°
60°
90°
120°
180°
Average On-state Current (A)
DC
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
350
DC
300
180 120
250
90 60 30
200
150
100
50
0
Maximum Average On-state Power Loss (W)
0 50 100 150 200 250
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
3000
At A ny Ra ted Load Condition And With
Ra ted V A p plied F ollo wing Sur ge .
2800
2600
2400
2200
2000
1800
1600
VSK.136.. Series
1400
Peak Half Sine Wave On-state Current (A)
Per Junction
1200
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
RRM
RMS Limit
Conduction Period
VSK.136.. Series Per Junction T = 1 2 5°C
J
In itia l T = 1 25°C
J
at 60 Hz 0.0083 s at 50 Hz 0.0100 s
001011
300
250
200
150
100
50
Maximum Average On-state Power Loss (W)
0
0 30 60 90 120 150
180 120 90 60 30
RMS Limit
Average On-state Current (A)
Conduction Angle
VSK.136.. Series Per Junction TJ = 125°C
Fig. 3 - On-State Power Loss Characteristics
3500
3000
2500
2000
1500
Peak Half Sine Wave On-state Current (A)
1000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
VSK.1 3 6.. Se ries Per Junction
Pulse Train Duration (s)
In it ial T = 125°C
No Voltage Reapplied Ra te d V R eap plied
RRM
J
11.010.0
Fig. 6 - Maximum Non-Repetitive Surge Current
www.vishay.com For technical questions, contact: [email protected]
Document Number: 94513
4 Revision: 04-May-10
Page 5
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
450
400
350
300
Conduction Angle
250
200
150
100
50
Ma xim um To tal O n-sta te P ow er Lo ss (W)
0
0 50 100 150 200 250 300
Total RMS O utput C urrent (A)
1000
900
800
700
600
500
180
(Sine)
180
(Rect)
400
300
200
Maximum Total Power Loss (W )
100
0
0 55 110 165 220 275
Total Output Current (A)
180 120
90 60 30
VSK.1 36 .. S eries
Per Module
T = 1 2 5°C
J
Fig. 7 - On-State Power Loss Characteristics
2 x VSK.136.. Series Single Phase Bridge
Connected
T = 1 2 5°C
J
Vishay High Power Products
0
0
.
.
1
0
2
8
K
0
/
.
W
1
6
K
/
W
0
.
2
5
K
/
W
0
.
4
K
/
W
0
.
6
K
/
W
1
K
/
W
0255075100125
M a x im um A llow a b le A m bie n t T em p e ra tu re (°C)
0
.
0
0
.
0
8
K
/
W
0
.
1
2
K
/
W
0
.
2
K
/
W
0
.
3
5
K
/
W
0
.
6
K
/
W
0255075100125
Maximum Allowable Ambient Temperature (°C)
R
0
t
.
h
0
K
4
S
4
/
A
W
K
=
/
W
0.01
K
/
W
- Δ
R
R
t h
S
A
=
K
/
0
W
.
0
1
K
/
W
­Δ R
Fig. 8 - On-State Power Loss Characteristics
1500
R
t
h
S
A
1200
900
120
(Rec t)
600
3 x VSK.136.. Series
300
Maximum Total Power Loss (W)
0
0 100 200 300 400
Three Phase Bridge
Connected
T = 1 2 5°C
J
Total O u tput C urrent (A)
0255075100125
M a x im u m Al lo wa b le A m bien t Tem p e r a t u r e (°C)
=
0
.
0
4
K
0
.
0
8
0
.
1
K
0
.
1
6
K
0
.
2
5
0
.
4
K
1
K
/
W
/
W
K
/
W
/
W
/
W
K
/
W
/
W
­Δ R
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94513 For technical questions, contact: [email protected]
www.vishay.com
Revision: 04-May-10 5
Page 6
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products
130
120
110
100
90
80
70
M a x im um Allo w ab le C ase T e m pe r a tu r e (°C)
0306090120150
Average Forward Current (A)
Fig. 10 - Current Ratings Characteristics
130
120
110
100
90
80
70
Maximum Allowable Case Temperature (°C)
30
0 50 100 150 200 250
Average On-state Current (A)
Fig. 11 - Current Ratings Characteristics
VSK.142.. Series R (D C ) = 0 .18 K/W
thJC
Conduction Angle
30
60
90
120
VSK.1 42 .. Se ries R (D C ) = 0.18 K /W
thJC
Conduction Period
60
90
120
180
180
DC
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
350
300
250
200
150
100
50
Maximum Average On-state Power Loss (W)
Fig. 13 - On-State Power Loss Characteristics
4500
4000
3500
3000
2500
2000
Pe ak Ha lf Sine W ave O n -stat e C urren t (A)
1500
Number Of Equa l Amp litud e H alf Cycle Current Pulses (N)
Fig. 14 - Maximum Non-Repetitive Surge Current
DC 180 120
90 60 30
RMS Limit
0
050100150200250
Average On-state Current (A)
At A ny Ra ted Load Condition And With
Ra ted V A p plied F ollo wing Sur ge .
RRM
VSK.142.. Series Per Junction
Conduction Period
VSK.142.. Series Per Junction T = 1 2 5°C
J
In itia l T = 1 2 5°C
J
J
at 60 Hz 0.0083 s at 50 Hz 0.0100 s
001011
250
180
200
150
100
Maximum Average On-state Power Loss (W)
120
90 60 30
RMS Limit
Conduction Angle
50
0
0306090120150
Average On-state Current (A)
VSK.1 4 2. . Series Per Junction T = 1 2 5°C
J
Fig. 12 - On-State Power Loss Characteristics
Peak Half Sin e W av e O n-sta te C urren t (A)
5000
4500
4000
3500
3000
2500
2000
1500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
VSK.142.. Serie s Per Junction
Pulse Train Duration (s)
In itia l T = 1 2 5°C
No Voltage Reapplied Rated V Re applied
RRM
J
J
11.010.0
Fig. 15 - Maximum Non-Repetitive Surge Current
www.vishay.com For technical questions, contact: [email protected]
Document Number: 94513
6 Revision: 04-May-10
Page 7
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
400
180
300
200
Conduction Angle
100
Maximum Total On-state Powe r Loss (W )
0
0 50 100 150 200 250 300
Tota l RM S O utp ut C urre nt (A)
1000
800
600
400
(Rect)
120
90 60 30
VSK.1 42 .. S eries
Per Module
T = 12 5°C
Fig. 16 - On-State Power Loss Characteristics
180
(Sine)
180
Vishay High Power Products
0
0
.
1
.
1
2
6
K
K
/
/
W
W
0
.
2
5
K
/
W
0
.
4
K
/
W
0
.
6
K
/
W
1
K
/
W
J
0255075100125
M a xim u m All o w a b le A m b i ent T em p e ra tu r e (°C)
0
.
0
4
K
0
.
0. 1
0
.
1
0
.
2
5
/
0
2
6
W
8
K
/
W
K
/
W
K
/
W
K
/
W
R
0
0
.
t
.
0
0
h
4
S
8
A
K
K
=
/
/
W
W
0
.
0
1
K
/
W
­Δ R
R
t
h
S
A
=
0
.
0
1
K
/
W
­Δ R
200
Maximum Total Power Loss (W)
0
0100200300
2 x VSK.142.. Series
Single Phase Bridge
Connected
T = 12 5°C
J
0255075100125
Total O u tput C urrent (A)
Fig. 17 - On-State Power Loss Characteristics
1600
1200
120
(Rec t)
800
400
Maximum Total Power Loss (W)
0
0 50 100 150 200 250 300 350 400 450
Total Output Current (A)
3 x VSK.142.. Series Three Phase Bridge
Connected
T = 1 2 5°C
J
0255075100125
M a x im um A llo w a b le A m bie n t T e m p e r a tu re (°C)
Fig. 18 - On-State Power Loss Characteristics
0
.
6
K
/
W
Maximum Allowable Ambient Temperature (°C)
0
.
0
4
0
.
0
6
K
/
W
0
.
0
8
K
/
W
0
.
1
K
/
W
0
.
1
6
K
/
W
0
.
2
K
/
W
R
t
h
S
K
/
A
W
=
0
.
0
2
K
/
W
­Δ R
Document Number: 94513 For technical questions, contact: [email protected]
www.vishay.com
Revision: 04-May-10 7
Page 8
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products
130
120
110
100
90
80
Maximum Allowable Case Temperature (°C)
70
0306090120150180
Fig. 19 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
Maximum Allowable Case Temperature (°C)
0 50 100150200250300
Fig. 20 - Current Ratings Characteristics
VSK.1 62.. Se rie s R (DC ) = 0.16 K/W
thJC
Conduction Angle
30
60
90
120
Average Forward Current (A)
VSK.162.. Series R (DC) = 0.16 K/W
thJC
Conduction Period
30
60
90
120
180
Average On-state Current (A)
180
DC
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
400
350
300
250
200
150
100
50
0
Maximum Average On-state Power Loss (W)
Fig. 22 - On-State Power Loss Characteristics
4500
4000
3500
3000
2500
2000
Pe a k H a lf Sin e Wave O n-sta te C urrent (A )
1500
Nu m b er O f Eq ual Am p litu d e Half C yc le C urr en t P uls e s (N )
Fig. 23 - Maximum Non-Repetitive Surge Current
DC 180 120
90
60
30
RMS Limit
0 306090120150180210240270
Average On-state Current (A)
At Any Rated Load Condition And With
Ra te d V A p p lie d Foll ow ing Sur g e.
RRM
VSK.1 62.. S erie s Per Junction
Conduction Period
VSK.162.. Series Per Junction T = 125°C
J
In it ia l T = 1 2 5°C
J
at 60 Hz 0.0083 s at 50 Hz 0.0100 s
001011
400
VSK.162.. Series Per Junction
350
T = 1 2 5°C
J
300
250
200
150
100
50
0
Maximum Average On-state Power Loss (W)
180 120
90 60 30
0 20406080100120140160180
Average On-state Current (A)
RMS Limit
Conduction Angle
Fig. 21 - On-State Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
5000
4500
4000
3500
3000
2500
2000
1500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
VSK.162.. Series Per Junction
Pulse Train Duration (s)
In it ia l T = 12 5°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
11.010.0
Fig. 24 - Maximum Non-Repetitive Surge Current
www.vishay.com For technical questions, contact: [email protected]
Document Number: 94513
8 Revision: 04-May-10
Page 9
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
600
500
400
300
Conduction Angle
200
100
Maximum Total On-state Power Loss (W)
0
0 100 200 300 400
Total RMS O utput C urrent (A)
900
800
700
600
500
400
300
200
Maximum Total Power Loss (W)
100
0
0 50 100 150 200 250 300
Total Ou tput Current (A)
180 120
90 60 30
VSK.162.. Series
Per Module
T = 12 5°C
J
Fig. 25 - On-State Power Loss Characteristics
180
(Sine )
180
(Re ct )
2 x VSK.162.. Series
Single Phase Bridge
Connected
T = 125°C
J
Vishay High Power Products
R
0
.
0
.
0
6
0
.
0
8
K
/
W
0
.
1
K
/
W
0
.
1
6
K
/
W
0
.
2
K
/
W
0 25 50 75 1 00 125
M a x im um A llow a b le A m bie n t T e m p e r a tu re (°C)
0
.
0
8
K
/
W
0
.
1
2
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
4
K
/
W
0
.
6
K
/
W
1
K
/
W
0255075100125
M a xim u m All o w a b le A m b ient T em p e ra tu r e (°C)
t
0
h
4
S
A
K
K
/
W
=
/
W
0
.
0
2
K
/
W
­Δ R
R
t
h
S
A
=
0
.
0
4
K
/
W
­Δ R
Fig. 26 - On-State Power Loss Characteristics
1500
1250
1000
750
500
120
(Rec t)
3 x VSK.162.. Series
Three Phase Bridge
250
Maximum Total Power Loss (W)
0
0 50 100 150 200 250 300 350 400 450
Connected
T = 1 2 5°C
J
To tal Ou tp ut Cu rre nt (A )
0
.
0
8
K
0
.
1
2
K
0
.
2
K
/
0
.
3
K
/
0
.
6
K
0 25 50 75 100 125
M a xim um A llo w a b l e A m b i e n t Te m p e ra tu re (°C)
R
0
.
0
t
h
4
S
K
A
/
W
=
0
.
0
2
K
/
/
W
/
W
W
W
/
W
W
­Δ R
Fig. 27 - On-State Power Loss Characteristics
Document Number: 94513 For technical questions, contact: [email protected]
www.vishay.com
Revision: 04-May-10 9
Page 10
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products
10000
1000
100
10
Instantaneous On-state Current (A)
1
012345
Instantaneous On-state Voltage (V)
Fig. 28 - On-State Voltage Drop Characteristics
10000
1000
100
T = 25˚C
J
T = 125˚C
J
VSK.136.. Series Per Junction
T = 25˚C
J
T = 125˚C
J
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
1
thJC
Transient Thermal Impedance Z
0.001
Fig. 31 - Thermal Impedance Z
thJC
Steady State Value
(DC Operation)
0.1
0.01
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
1
Steady State Value
(DC Operation)
0.1
VSK.136.. Series
Characteristics
thJC
10
VSK.142.. Series
Instantaneous On-state Current (A)
1
012345
Instantaneous On-state Voltage (V)
Per Junction
Fig. 29 - On-State Voltage Drop Characteristics
10000
1000
100
10
Instantaneous On-state Current (A)
1
012345
Instantaneous On-state Voltage (V)
T = 25˚C
J
T = 125˚C
J
VSK.162.. Series Per Junction
Fig. 30 - On-State Voltage Drop Characteristics
Transient Thermal Impedance Z
0.01
0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 32 - Thermal Impedance Z
1
thJC
Transient Thermal Impedance Z
Steady State Value
(DC Operation)
0.1
0.01
0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 33 - Thermal Impedance Z
VSK.142.. Series
thJC
VSK.162.. Series
thJC
Characteristics
Characteristics
www.vishay.com For technical questions, contact: [email protected]
Document Number: 94513
10 Revision: 04-May-10
Page 11
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
100
Rectangular gate pulse a)Recommended load line for
rated d I/dt: 20 V, 20 W tr = 0.5 s, tp >= 6 s
b)R e co m m e nd e d loa d lin e fo r
<= 30% rated dI/dt: 15 V, 40 W
10
tr = 1 s, tp >= 6 s
1
In stan t a neou s G a te V o ltage (V )
ORDERING INFORMATION TABLE
Device code
VGD
IG D
0.1
0.001 0.01 0.1 1 10 100 1000
VSK T 162 / 16 PbF
Thyristor/Diode and
(a)
(b)
T
J
= -40 °C
T
J
T
= 25 °C
J
= 125 °C
VSK.136..142..162.. Series
Instan tan eo us G ate C urren t (A)
Fig. 34 - Gate Characteristics
Vishay High Power Products
(1) PGM = 200 W , tp = 300 s (2) PGM = 60 W , tp = 1 m s (3) PGM = 30 W , tp = 2 m s (4) PGM = 12 W , tp = 5 m s
(4) (3)
Frequency Limited by PG(AV )
(2) (1 )
- Module type
1
- Circuit configuration
2
- Current rating: I
3
- Voltage code x 100 = V
4
- PbF = Lead (Pb)-free
5
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
VSKT...
~
+
+
-
K1 K2
G1 G2
-
-
VSKH...
+
T(AV)
51324
RRM
VSKL...
~
+
~
+
+
-
K1 G1
-
-
K2 G2
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95067
Document Number: 94513 For technical questions, contact: [email protected] Revision: 04-May-10 11
www.vishay.com
Page 12
INT-A-PAK IGBT/Thyristor
80 (3.15)
Ø 6.5 (0.25 DIA)
30 (1.18)
9 (0.33)
7 (0.28)
28 (1.10)
29 (1.15)
37 (1.44)
5 (0.20)
2.8 x 0.8 (0.11 x 0.03)
7
6
5
4
123
23 (0.91)23 (0.91)17 (0.67)
35 (1.38)
14.5 (0.57)
3 screws M6 x 10
66 (2.60)
94 (3.70)
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
Document Number: 95067 For technical questions, contact: [email protected] Revision: 15-Feb-08 1
www.vishay.com
Page 13
Legal Disclaimer Notice
Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1
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