Datasheet VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF DataSheet (Vishay)

Thyristor/Diode and Thyristor/Thyristor

SUPER MAGN-A-PAK

(SUPER MAGN-A-PAK Power Modules), 500 A

PRODUCT SUMMARY

I

, I

T(AV)

F(AV)

VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF

Vishay Semiconductors

FEATURES

• High current capability

• High surge capability

• Industrial standard package

500 A

• 3000 V
substrate

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• Motor starters

• DC motor controls - AC motor controls

• Uninterruptable power supplies

isolating voltage with non-toxic

RMS

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

, I

T(AV)

F(AV)

I

T(RMS)

I

TSM

2

I

t

2

I

t 15 910 kA2s

V

RRM

T

Stg

T

J

82 °C 500 A

785 A

T

C

50 Hz 17.8

60 Hz 18.7

50 Hz 1591

60 Hz 1452

Range 800 to 1600 V

Range - 40 to 150

Range - 40 to 130

82 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VSK.500

V

VOLTAGE

CODE

08 800 900

12 1200 1300

14 1400 1500

16 1600 1700

RRM/VDRM

, MAXIMUM REPETITIVE

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM/IDRM

AT T

J

kA

kA2s

°C

MAXIMUM

= TJ MAXIMUM

mA

100

Document Number: 94420 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

, [e-mail], [e-mail] 1

VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF

Vishay Semiconductors

Thyristor/Diode and Thyristor/Thyristor

(SUPER MAGN-A-PAK Power Modules), 500 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current

I

at case temperature

Maximum RMS on-state current I

T(RMS)

Maximum peak, one-cycle,
non-repetitive on-state surge current

2

Maximum I

Maximum I

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 15 910 kA2s

Low level value or threshold voltage V

High level value of threshold voltage V

Low level value on-state slope resistance r

High level value on-state slope resistance r

Maximum on-state voltage drop V

Maximum forward voltage drop V

Maximum holding current I

Maximum latching current I

T(AV),

I

F(AV)

180° conduction, half sine wave

180° conduction, half sine wave at TC = 82 °C 785 A

t = 10 ms

I

TSM,

I

FSM

t = 8.3 ms 18.7

t = 10 ms

t = 8.3 ms 15.7

t = 10 ms

t = 8.3 ms 1452

t = 10 ms

t = 8.3 ms 1027

T(TO)1

T(TO)2

TM

FM

(16.7 % x  x I
(I >  x I

(16.7 % x  x I

t1

(I >  x I

t2

Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.50 V

Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.50 V

H

TJ = 25 °C, anode supply 12 V resistive load

L

No voltage
reapplied

100 % V
reapplied

RRM

Sinusoidal
half wave,

No voltage
reapplied

100 % V

RRM

initial T

= TJ maximum

J

reapplied

< I <  x I

T(AV)

), TJ = TJ maximum 0.93

T(AV)

< I <  x I

T(AV)

), TJ = TJ maximum 0.32

T(AV)

), TJ = TJ maximum 0.85

T(AV)

), TJ = TJ maximum 0.36

T(AV)

500 A

82 °C

17.8

15.0

1591

1125

500

1000

kA

m

mA

kA

2

s

V

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum rate of rise of turned-on current dI/dt T

Typical delay time t

Typical turn-off time t

d

q

= TJ maximum, ITM = 400 A, V

J

applied 1000 A/μs

DRM

Gate current 1 A, dIg/dt = 1 A/μs
V

= 0.67 % V

d

I

= 750 A; TJ = TJ maximum, dI/dt = - 60 A/μs,

TM

= 50 V, dV/dt = 20 V/μs, gate 0 V 100 

V

R

, TJ = 25 °C

DRM

2.0

μs

200

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise
of off-state voltage

RMS insulation voltage V

Maximum peak reverse and
off-state leakage current

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dV/dt T

INS

,

I

RRM

I

DRM

= 130 °C, linear to VD = 80 % V

J

DRM

1000 V/μs

t = 1 s 3000 V

TJ = TJ maximum, rated V

DRM/VRRM

applied 100 mA

, [e-mail], [e-mail] Revision: 02-Jul-10

VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF

Thyristor/Diode and Thyristor/Thyristor

Vishay Semiconductors

(SUPER MAGN-A-PAK Power Modules), 500 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum peak average gate power P

Maximum peak positive gate current +I

Maximum peak positive gate voltage +V

Maximum peak negative gate voltage -V

Maximum DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GT

GT

GD

GD

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case per junction

Maximum thermal resistance,
case to heatsink

SMAP to heatsink

Mounting torque ± 10 %

busbar to SMAP 12 to 15

Approximate weight 1500 g

Case style See dimensions - link at the end of datasheet SUPER MAGN-A-PAK

R

R

T

Stg

thJC

thC-hs

TJ = TJ maximum, tp  5 ms 10

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp  5 ms

GM

TJ = 25 °C, Vak 12 V

TJ = TJ maximum 10 mA

J

DC operation 0.065

A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound.

200 mA

0.25 V

- 40 to 130

- 40 to 150

0.02

6 to 8

3.0 A

20

5.0

3.0 V

K/W

Nm

W

V

°C

R

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

Note

• Table shows the increment of thermal resistance R

Document Number: 94420 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

CONDUCTION

thJC

180° 0.009 0.006

120° 0.011 0.011

90° 0.014 0.015

60° 0.021 0.022

30° 0.037 0.038

when devices operate at different conduction angles than DC

thJC

, [e-mail], [e-mail] 3

T

= TJ maximum K/W

J

60

70

80

90

100

110

120

130

0 100 200 300 400 500 600 700 800 900

DC

30°

60°

90°

120°

180°

Average On-state Current (A)

Maximum Allowable Case Temperature (°C)

Cond uction Period

VSK.500.. Se ries
R (DC ) = 0.065 K/ W

thJC

0

100

200

300

400

500

600

700

0 100 200 300 400 500

RM S Lim it

Conduc tion Angle

180°
120°

90°
60°
30°

Maximum Average On-st ate Power Loss (W)

Average On-state Current (A)

VSK.500.. Serie s
Pe r Ju nc t io n
T = 1 3 0° C

J

7000

8000

9000

10000

11000

12000

13000

14000

15000

16000

110100

Num be r Of Equ al A mplit ude Half Cyc le C urrent Pulses (N)

Peak Half Sine Wave On-state Current (A )

Init ial T = 130°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

J

At Any Rat ed Load Condition And With

Ra t ed V App lied Fo llo wing Surge.

RRM

VSK.500.. Serie s
Pe r Ju n c t io n

6000

8000

10000

12000

14000

16000

18000

0.01 0.1 1

Peak Half Sine Wave On-state Current (A)

Pulse Train Dura tio n (s)

Maximum Non Re p et itive Surge Current

Versus Pulse Tra in Dura t ion . Cont ro l

Of Conduction May Not Be Maintained.

Init ial T = 130°C

No Vo lta g e Rea pplied
Ra t e d V Re a p p l i e d

RRM

J

VSK.500.. Serie s
Pe r Ju nc t io n

VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF

Vishay Semiconductors

130

120

110

100

90

80

70

60

Maximum Allowable Case Temperature (°C)

0 100 200 300 400 500 600

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

VSK.500.. Series
R (DC) = 0.065 K/ W

thJC

Conduction Angle

30°

60°

90°

Thyristor/Diode and Thyristor/Thyristor

(SUPER MAGN-A-PAK Power Modules), 500 A

120°

180°

1000

900

800

700

600

500

400

300

200

100

0

Maximum Average On-state Power Loss (W)

Fig. 4 - On-State Power Loss Characteristics

DC
180°
120°

90°

60°

30°

RM S Li m it

0 100 200 300 400 500 600 700 800

Average On-state Current (A)

Conduction Period

VSK.500. . Serie s
Pe r Ju nc t i o n
T = 1 3 0 ° C

J

Fig. 2 - Current Ratings Characteristics

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Fig. 3 - On-State Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 6 - Maximum Non-Repetitive Surge Current

, [e-mail], [e-mail] Revision: 02-Jul-10

020406080100120

Maximum Allowable Ambient Temperature (°C)

R

=

0

.

0

1

K

/

W

­D

e

l

t

a

R

0

.

0

2

K

/

W

0

.

0

3

K

/

W

0

.

0

5

K

/

W

0

.

0

8

K

/

W

0

.

1

2

K

/

W

0

.

2

K

/

W

t

h

S

A

0

500

1000

1500

2000

2500

3000

0 200 400 600 800 1000

Total Output Current (A)

Maximum Total Power Loss (W)

180°

(Sine )

180°

(Rec t)

2 x VSK.50 0. . Se rie s
Si n g l e Ph a se Br i d g e

Connected

T = 130°C

J

0 20406080100120

Maximum Allowable Ambient Temperature (°C)

R

=

0

.

0

1

K

/

W

­D

e

l

t

a

R

0

.

0

2

K

/

W

0

.

0

3

K

/

W

0

.

0

5

K

/

W

0

.

0

8K

/

W

0

.

2

K

/

W

t

h

S

A

0

500

1000

1500

2000

2500

3000

3500

4000

4500

0 250 500 750 1 000 1250 15 00

Total Output Current (A)

Maximum Total Power Loss (W)

120°

(Rect)

3 x VSK.500 .. Seri e s
Th r e e P h a s e Br i d g e

Connected

T = 1 3 0° C

J

VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF

Thyristor/Diode and Thyristor/Thyristor

(SUPER MAGN-A-PAK Power Modules), 500 A

750
700
650
600
550
500

Cond uctio n Angle

180°
120°

90°
60°
30°

450
400
350
300
250
200
150
100

50

Maximum Tota l On-sta te Power Loss (W)

0

0 100 200 300 400 500 600 700 800

VSK.500.. Ser ie s

Pe r Mo du le

T = 130°C

J

To t a l RM S O u t p u t C ur re n t ( A )

Fig. 7 - On-State Power Loss Characteristics

0

.1

0

.

2

K

0

.

3

K

0

.

4

K

0

.

6

K

0 20406080100120

Maximum Allowable Ambient Temperature (°C)

0

0

.

1

2

6

K

/

W

/

W

/

W

/

W

/

W

R

.

0

9

t

h

K

K

/

S

/

A

W

W

=

Vishay Semiconductors

0

.

0

7

K

/

W

­D

e

l

t

a

R

Document Number: 94420 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

Fig. 8 - On-State Power Loss Characteristics

Fig. 9 - On-State Power Loss Characteristics

, [e-mail], [e-mail] 5

100

1000

10000

0.5 1 1.5 2 2. 5 3 3.5 4 4.5

T = 25°C

J

Insta ntaneous On-state Current (A)

Instantaneous On-state Voltage (V)

T = 13 0 ° C

J

VSK.500. . Ser ie s
Pe r J un c t i o n

0.001

0.01

0.1

0.001 0.01 0.1 1 10 100

Sq u a r e Wa v e Pu l se D u r a t i o n ( s)

thJC

Tra n si e n t T

hermal Impedance Z (K/W)

VSK.500. . Serie s
Pe r Ju nc t io n

St e a d y St a t e V a l u e :

R = 0.065 K/W

(DC Operation)

thJC

1 - Module type

2

- Circuit configuration (see end of datasheet)

3 - Current rating

4 - Voltage code x 100 = V

RRM

(see Voltage Ratings table)

5 - Lead (Pb)-free

Device code

51324

VSK T 500 - 16 PbF

VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF

Vishay Semiconductors

Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Thermal Impedance Z

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs

b) Recommended load line for

<=30% rated di/dt : 10V, 10ohms

10

tr<=1 µs

1

Instantaneous Gate Voltage (V)

0.1

0.001 0. 01 0.1 1 10 100

Thyristor/Diode and Thyristor/Thyristor

(SUPER MAGN-A-PAK Power Modules), 500 A

(1) PGM = 10W, t p = 4m s
(2) PGM = 20W, t p = 2m s
(3) PGM = 40W, t p = 1m s
(4) PGM = 60W, tp = 0.66ms

(a)

(b)

Tj = - 4 0 ° C

Tj =2 5 ° C

Tj =1 3 0 ° C

(2) (3)

VGD

IGD

VSK.500.. Series Frequency Limited by PG(AV)

In st an t a ne o u s G a t e C ur re nt (A )

Fig. 12 - Gate Characteristics

(1)

(4)

Characteristics

thJC

ORDERING INFORMATION TABLE

Note

• To order the optional hardware go to www.vishay.com/doc?95172

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94420
6 [e-mail]

, [e-mail], [e-mail] Revision: 02-Jul-10

VSKT

+

6 (G2)

-

5 (G1)

~

1

2

3

7 (K2)4 (K1)

VSKL

+

6 (G2)

-

~

1

2

3

7 (K2)

VSKH

+

-

5 (G1)

~

1

2

3

4 (K1)

VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF

Thyristor/Diode and Thyristor/Thyristor

Vishay Semiconductors

(SUPER MAGN-A-PAK Power Modules), 500 A

CIRCUIT CONFIGURATION

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95283

Document Number: 94420 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

, [e-mail], [e-mail] 7

Super MAGN-A-PAK Thyristor/Diode

52 (2.05)

60.0 (2.36)

48.0 (1.89)

31.0

(1.22)

50.0

(1.97)

44.0

(1.73)

M10

Fast-on tabs

2.8 x 0.8 (0.11 x 0.03)

20.1
(0.78)

36.4 (1.14) 4.5 (0.20)

54

6

5, 6 = Gate
4, 7 = Cathode

7

28.0
(1.10)

26.0

(0.98)

26.0

(0.98)

112.0 (4.41)

124.0 (4.88)

149.0 (5.67)

1.0 (0.039)

32

1

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

Document Number: 95283 For technical questions, contact: [e-mail]
Revision: 20-Mar-08 1

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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
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