Datasheet VSK.136..PbF Series, VSK.142..PbF Series, VSK.162..PbF Series DataSheet (Vishay)

Page 1
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A
New INT-A-PAK
PRODUCT SUMMARY
I
T(AV)
(New INT-A-PAK
TM
135 to 160 A
Vishay High Power Products
TM
Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI
• 3500 V
isolating voltage
RMS
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in three basic configurations
• Simple mounting
• UL E78996 approved
• Totally lead (Pb)-free
• Designed and qualified for multiple level
APPLICATIONS
• DC motor control and drives
• Battery charges
•Welders
• Power converters
• Lighting control
• Heat and temperature control
2O3
)
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VSK.136.. VSK.142.. VSK.162.. UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
2
√t 515.5 1013 1190 kA2√s
I
V
RRM
T
J
T
C
50 Hz 3200 4500 4870
60 Hz 3360 4712 5100
50 Hz 51.5 102 119
60 Hz 47 92.5 108
Range - 40 to 125 °C
135 140 160 A
85 85 85 °C
300 310 355
400 to 1600 V
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VSK.136 VSK.142 VSK.162
V
VOLTAGE
CODE
04 400 500
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700
RRM/VDRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM/VDSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM/IDRM
AT 125 °C
A
kA2s
mA
50
Document Number: 94513 For technical questions, contact: [email protected] Revision: 25-Apr-08 1
www.vishay.com
Page 2
VSK.136, .142, .162..PbF Series
Vishay High Power Products
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAKTM Power Modules)
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
Maximum average on-state current at case temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one-cycle on-state, non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 515.5 1013 1190 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum forward voltage drop V
Maximum holding current I
Maximum latching current I
T(AV)
I
TSM
T(TO)1
T(TO)2
r
r
180° conduction, half sine wave
As AC switch 300 310 355
t = 10 ms
t = 8.3 ms 3360 4712 5100
t = 10 ms
t = 8.3 ms 2800 3963 4300
t = 10 ms
t = 8.3 ms 47 92.5 108
t = 10 ms
t = 8.3 ms 33.3 65.4 76.7
(16.7 % x π x I (I > π x I
(16.7 % x π x I
t1
(I > π x I
t2
ITM = π x I
TM
Anode supply = 6 V initial IT = 30 A, TJ = 25 °C 200
H
Anode supply = 6 V resistive load = 1 Ω
L
Gate pulse: 10 V, 100 µs, T
No voltage reapplied
100 % V
RRM
reapplied
No voltage reapplied
100 % V
RRM
reapplied
< I < π x I
T(AV)
), TJ maximum 1.05 1 0.98
T(AV)
< I < π x I
T(AV)
), TJ maximum 1.65 1.43 1.38
T(AV)
, TJ = 25 °C, 180° conduction 1.57 1.55 1.54 V
T(AV)
VALUES
VSK.136 VSK.142 VSK.162
135 140 160 A
85 85 85 °C
3200 4500 4870
2700 3785 4100 Sine half wave, initial T
=
maximum
T
J
J
51.5 102 119
36.5 71.6 84
), TJ maximum 0.86 0.83 0.8
T(AV)
), TJ maximum 2.02 1.78 1.67
T(AV)
= 25 °C
J
400
UNITS
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical delay time t
Typical rise time t
Typical turn-off time t
gd
gr
TJ = 25 °C
ITM = 300 A, - dl/dt = 15 A/µs; TJ = TJ maximum
q
= 50 V; dV/dt = 20 V/µs; gate 0 V, 100 Ω
V
R
Gate current = 1 A, dl V
= 0.67 % V
d
DRM
/dt = 1 A/µs
g
1
2
50 to 200
µs
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and off-state leakage current
RMS insulation voltage V
Critical rate of rise of off-state voltage
www.vishay.com For technical questions, contact: [email protected] 2 Revision: 25-Apr-08
I
RRM
I
DRM
INS
dV/dt
,
TJ = 125 °C 50 mA
50 Hz, circuit to base, all terminals shorted, t = 1 s
T
= TJ maximum,
J
exponential to 67 % rated V
DRM
3500 V
1000 V/µs
Document Number: 94513
Page 3
VSK.136, .142, .162..PbF Series
Thyristor/Diode and
Vishay High Power Products
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAKTM Power Modules)
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak gate current I
Maximum peak negative gate voltage
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
Maximum rate of rise of turned-on current
G(AV)
GM
- V
V
I
GT
V
I
GD
dI/dt T
tp ≤ 5 ms, TJ = TJ maximum 12
GM
f = 50 Hz, TJ = TJ maximum 3
tp ≤ 5 ms, TJ = TJ maximum
GT
TJ = - 40 °C
T
GT
GD
= 25 °C 2.5
J
T
= TJ maximum 1.7
J
TJ = - 40 °C 270
= 25 °C 150
J
T
= TJ maximum 80
J
TJ = TJ maximum, rated V
= TJ maximum, ITM = 400 A rated V
J
Anode supply = 6 V, resistive load; R
applied
DRM
= 1 Ω
a
applied 300 A/µs
DRM
W
3A
10
4
V
mAT
0.3 V
10 mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case per junction
Maximum thermal resistance, case to heatsink per module
Mounting torque ± 10 %
IAP to heatsink
busbar to IAP
Approximate weight
T
J
T
Stg
R
thJC
R
thCS
DC operation 0.18 0.16
Mounting surface, smooth, flat and greased 0.05
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads.
- 40 to 125
- 40 to 150
4 to 6 Nm
200 g
7.1 oz.
Case style New INT-A-PAK
ΔR CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
MAXIMUM
AT T
DEVICES
J
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.136 0.007 0.01 0.013 0.0155 0.017 0.009 0.012 0.014 0.015 0.017
VSK.162 0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040
Note
• Table shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
UNITS
°C
K/W
K/WVSK.142 0.0019 0.0019 0.0020 0.0020 0.0021 0.0018 0.0022 0.0023 0.0023 0.0020
Document Number: 94513 For technical questions, contact: [email protected]
www.vishay.com
Revision: 25-Apr-08 3
Page 4
VSK.136, .142, .162..PbF Series
Vishay High Power Products
130
120
110
100
90
80
70
Maximum Allowable Case Temperature (°C)
0 20 40 60 80 100 120 140
Fig. 1 - Current Ratings Characteristics
130
120
110
100
90
80
Maximum Allowable Case Temperature (°C)
70
0 50 100 150 200 250
Fig. 2 - Current Ratings Characteristics
VSK.136.. Series R
(DC) = 0.18 K/W
thJC
Conduction Angle
30°
60°
90°
120°
Average Forward Current (A)
VSK.136.. Series R
(DC) = 0.18 K/W
thJC
Conduction Period
30°
60°
90°
120°
180°
Average On-state Current (A)
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAKTM Power Modules)
350
DC
300
180 120
250
90 60 30
200
150
100
180°
DC
50
0
Maximum Average On-state Power Loss (W)
0 50 100 150 200 250
Fig. 4 - On-State Power Loss Characteristics
3000
At Any Rated Load Condition And With
2800
2600
2400
2200
2000
1800
1600
1400
Peak Half Sine Wave On-state Current (A)
1200
Ra ted V A p plie d F ollo wing Sur ge.
VSK.136.. Series Per Junction
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Conduction Period
VSK.136.. Series Per Junction T = 1 2 5°C
J
Average On-state Current (A)
RRM
In itia l T = 1 25°C at 60 Hz 0.0083 s at 50 Hz 0.0100 s
RMS Lim it
J
001011
300
250
200
150
100
50
Maximum Average On-state Power Loss (W)
0
180 120 90 60 30
RMS Limit
Conduction Angle
VSK.136.. Series Per Junction TJ = 125°C
0 30 60 90 120 150
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
3500
3000
2500
2000
1500
Peak Half Sine Wave On -state Current (A)
1000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
VSK.1 3 6.. Se ries Per Junction
Pulse Train Duration (s)
In it ial T = 125°C
No Voltage Reapplied Ra te d V R eap plied
RRM
J
Fig. 6 - Maximum Non-Repetitive Surge Current
11.010.0
www.vishay.com For technical questions, contact: [email protected]
Document Number: 94513
4 Revision: 25-Apr-08
Page 5
VSK.136, .142, .162..PbF Series
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAKTM Power Modules)
450
400
350
300
Conduction Angle
250
200
150
100
50
Ma xim um To tal O n-sta te P ow er Lo ss (W )
0
0 50 100 150 200 250 300
Total RMS O utput C urrent (A)
1000
900
800
700
600
500
180
(Sine)
180
(Rect)
400
300
200
Maximum Total Power Loss (W)
100
0
0 55 110 165 220 275
Total Output Current (A)
180 120
90 60 30
VSK.1 36 .. S eries
Per Module
T = 1 2 5°C
J
Fig. 7 - On-State Power Loss Characteristics
2 x VSK.136.. Series Single Phase Bridge
Connected
T = 1 2 5°C
J
Vishay High Power Products
0
0
.
.
1
0
2
8
K
0
/
.
W
1
6
K
/
W
0
.
2
5
K
/
W
0
.
4
K
/
W
0
.
6
K
/
W
1
K
/
W
0255075100125
M a x im um A llow a b le A m bie n t T e m p e ra tu re (°C)
0
.
0
0
.
0
8
K
/
W
0
.
1
2
K
/
W
0
.
2
K
/
W
0
.
3
5
K
/
W
0
.
6
K
/
W
0255075100125
Maximum Allowable Ambient Temperature (°C)
R
0
t
.
h
0
K
4
S
4
/
A
W
K
=
/
W
0.01
K
/
W
- Δ
R
R
t
h
S
A
=
K
/
0
W
.
0
1
K
/
W
­Δ R
Fig. 8 - On-State Power Loss Characteristics
1500
R
t
h
S
A
1200
900
120
(Rec t)
600
3 x VSK.136.. Series
300
Maximum Total Power Loss (W)
0
0 100 200 300 4 00
Three Phase Bridge
Connected
T = 1 2 5°C
J
Total O u tput C u rrent (A)
0255075100125
=
0
.
0
4
K
0
.
0
8
0
.
1
K
0
.
1
6
K
0
.
2
5
0
.
4
K
1
K
/
W
/
W
K
/
/
W
/
W
K
/
/
W
-
W
W
Δ R
M a x im u m Al lo wa b le A m bien t Tem p e r a t u r e (°C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94513 For technical questions, contact: [email protected]
www.vishay.com
Revision: 25-Apr-08 5
Page 6
VSK.136, .142, .162..PbF Series
Vishay High Power Products
130
120
110
100
90
80
70
M a x im um Allo w ab le C ase T e m pe r a tu r e (°C)
0306090120150
Average Forward Current (A)
Fig. 10 - Current Ratings Characteristics
130
120
110
100
90
80
70
Maximum Allowable Case Temperature (°C)
30
0 50 100 150 200 250
Average On-state Current (A)
Fig. 11 - Current Ratings Characteristics
VSK.142.. Series R (D C) = 0 .18 K/W
thJC
Conduction Angle
30
60
90
120
VSK.1 42 .. Se ries R (D C ) = 0.18 K /W
thJC
Conduction Period
60
90
120
180
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAKTM Power Modules)
350
300
250
200
RMS Limit
150
100
180
DC
50
0
Maximum Average On-state Power Loss (W)
050100150200250
Fig. 13 - On-State Power Loss Characteristics
4500
At A ny Ra ted Load C onditio n And W ith
4000
3500
3000
2500
2000
VSK.142.. Series
Pe ak Ha lf Sin e W ave O n -stat e C urren t (A)
Per Junction
1500
Number Of Equa l Amp litude Half Cy cle Current Pulses (N)
Fig. 14 - Maximum Non-Repetitive Surge Current
DC 180 120
90 60 30
Conduction Period
VSK.142.. Series Per Junction T = 1 2 5°C
J
Average On-state Current (A)
Ra ted V A p plied F ollo wing Sur ge.
RRM
In itia l T = 1 2 5°C
J
J
at 60 Hz 0.0083 s at 50 Hz 0.0100 s
001011
250
180
200
150
100
Maximum Average On-state Power Loss (W)
120
90 60 30
RMS Limit
Conduction Angle
50
0
0306090120150
Average On-state Current (A)
VSK.1 4 2. . Series Per Junction T = 1 2 5°C
J
Fig. 12 - On-State Power Loss Characteristics
5000
4500
4000
3500
3000
2500
2000
Peak H alf Sin e W ave O n -sta te C urr en t (A)
1500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
VSK.142.. Serie s Per Junction
Pulse Train Duration (s)
In itia l T = 1 2 5°C
No Voltage Reapplied Rated V Re applied
RRM
J
J
11.010.0
Fig. 15 - Maximum Non-Repetitive Surge Current
www.vishay.com For technical questions, contact: [email protected]
Document Number: 94513
6 Revision: 25-Apr-08
Page 7
VSK.136, .142, .162..PbF Series
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAKTM Power Modules)
400
180
300
200
Conduction Angle
100
Maximum Total On-state Power Loss (W )
0
0 50 100 150 200 250 300
Tota l RM S O utp ut C urre nt (A)
1000
800
600
400
120
90 60 30
VSK.1 42 .. S eries
Per Module
T = 12 5°C
Fig. 16 - On-State Power Loss Characteristics
180
(Sine)
180
(Rect)
Vishay High Power Products
0
0
.
1
.
1
2
6
K
K
/
/
W
W
0
.
2
5
K
/
W
0
.
4
K
/
W
0
.
6
K
/
W
1
K
/
W
J
0255075100125
M a xim u m All o w a b l e A m b ient T em p e r a tu r e (°C)
0
.
0
4
K
0
.
0. 1
0
.
1
6
0
.
2
5
/
0
2
W
8
K
/
W
K
/
W
K
/
W
K
/
W
R
0
0
.
t
.
0
0
h
4
S
8
A
K
K
=
/
/
W
W
0
.
0
1
K
/ W
­Δ R
R
t
h
S
A
=
0
.
0
1
K
/
W
­Δ R
200
Maximum Total Power Loss (W)
0
0100200300
2 x VSK.142.. Series
Single Phase Bridge
Connected
T = 12 5°C
J
0255075100125
Total O u tput C u rrent (A)
Fig. 17 - On-State Power Loss Characteristics
1600
1200
120
(Rec t)
800
400
Maximum Total Power Loss (W)
0
0 50 100 150 200 250 300 350 400 450
3 x VSK.142.. Series Three Phase Bridge
Connected
T = 1 2 5°C
J
0255075100125
Total Output Current (A)
Fig. 18 - On-State Power Loss Characteristics
0
.
6
K
/
W
Maximum Allowable Ambient Temperature (°C)
0
.
0
4
0
.
0
6
K
/
W
0
.
0
8
K
/
W
0
.
1
K
/
W
0
.
1
6
K
/
W
0
.
2
K
/
W
R
t
h
S
K
/
W
A
=
0
.
0
2
K
/
W
­Δ R
M a x im um A llo w a b le A m bie n t T e m p e r a tu re (°C)
Document Number: 94513 For technical questions, contact: [email protected]
www.vishay.com
Revision: 25-Apr-08 7
Page 8
VSK.136, .142, .162..PbF Series
Vishay High Power Products
130
120
110
100
90
80
Maximum Allowable Case Temperature (°C)
70
0306090120150180
Fig. 19 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
Maximum Allowable Case Temperature (°C)
0 50 100150200250300
Fig. 20 - Current Ratings Characteristics
VSK.1 62.. Se rie s R (DC ) = 0.16 K/W
thJC
Conduction Angle
30
60
90
120
Average Forward Current (A)
VSK.162.. Series R (DC) = 0.16 K/W
thJC
Conduction Period
30
60
90
120
180
Average On-state Current (A)
180
DC
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAKTM Power Modules)
400
350
300
250
200
150
100
50
Maximum Average On-state Power Loss (W)
Fig. 22 - On-State Power Loss Characteristics
4500
4000
3500
3000
2500
2000
Pe a k H a lf Sin e W ave O n-sta te C urre nt (A )
1500
Nu m b er O f Eq ual Am p litu d e H a lf C yc le C urr en t P u lse s (N )
Fig. 23 - Maximum Non-Repetitive Surge Current
DC 180 120
90
60
30
RMS Limit
0
0 306090120150180210240270
Average On-state Current (A)
At Any Rated Load Condition And With
Ra te d V A p p lie d Follow ing S urg e.
VSK.1 62.. S e rie s Per Junction
RRM
Conduction Period
VSK.162.. Series Per Junction T = 125°C
J
In it ia l T = 1 2 5°C
J
at 60 Hz 0.0083 s at 50 Hz 0.0100 s
001011
400
VSK.162.. Series Per Junction
350
T = 1 2 5°C
J
300
250
200
150
100
50
0
Maximum Average On-state Power Loss (W)
180 120
90 60 30
0 20406080100120140160180
Average On-state Current (A)
RMS Limit
Conduction Angle
Fig. 21 - On-State Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
5000
4500
4000
3500
3000
2500
2000
1500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
VSK.162.. Series Per Junction
Pulse Train Duration (s)
In it ia l T = 12 5°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
11.010.0
Fig. 24 - Maximum Non-Repetitive Surge Current
www.vishay.com For technical questions, contact: [email protected]
Document Number: 94513
8 Revision: 25-Apr-08
Page 9
VSK.136, .142, .162..PbF Series
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAKTM Power Modules)
600
500
400
300
Conduction Angle
200
100
Maximum Total On-state Power Loss (W)
0
0 100 200 300 400
Total RMS O utput C urrent (A)
900
800
700
600
500
400
300
200
Maximum Total Power Loss (W)
100
0
0 50 100 150 200 250 300
Total Ou tput Current (A)
180 120
90 60 30
VSK.162.. Series
Per Module
T = 12 5°C
J
Fig. 25 - On-State Power Loss Characteristics
180
(Sine )
180
(Re ct )
2 x VSK.162.. Series
Single Phase Bridge
Connected T = 125°C
J
Vishay High Power Products
R
0
.
0
.
0
6
0
.
0
8
K
/
W
0
.
1
K
/
W
0
.
1
6
K
/
W
0
.
2
K
/
W
0 25 50 75 1 00 125
M a x im um A llow a b le A m bie n t T e m p era tu re (°C)
0
.
0
8
K
/
0
.
1
2
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
4
K
/
W
0
.
6
K
/
W
1
K
/
W
0255075100125
M a xim u m All o w a b l e A m b ient T e m p e r a tu r e (°C)
t
0
h
4
S
A
K
K
/
W
W
=
/
W
0
.
0
2
K
/
W
­Δ R
R
t
h
S
A
=
0
.
0
4
K
/
W
­Δ R
Fig. 26 - On-State Power Loss Characteristics
1500
1250
1000
750
500
120
(Rec t)
3 x VSK.162.. Series Three Phase Bridge
250
Maximum Total Power Loss (W)
0
0 50 100 150 200 250 300 350 400 450
Connected
T = 1 2 5°C
J
To tal Ou tp ut Cu rre nt (A )
0
.
0
8
K
0
.
1
2
K
0
.
2
K
/
0
.
3
K
/
0
.
6
K
0 25 50 75 100 125
M a xim u m A l lo w a b le Am b ie n t T e m p e r a tu r e (°C)
R
0
.
0
t
h
4
S
K
A
/
W
=
0
.
0
2
K
/
/
W
/
W
W
W
/
W
W
­Δ R
Fig. 27 - On-State Power Loss Characteristics
Document Number: 94513 For technical questions, contact: [email protected]
www.vishay.com
Revision: 25-Apr-08 9
Page 10
VSK.136, .142, .162..PbF Series
Vishay High Power Products
10000
1000
100
10
Instantaneous On-state Current (A)
1
012345
Instantaneous On-state Voltage (V)
Fig. 28 - On-State Voltage Drop Characteristics
10000
1000
100
T = 25˚C
J
T = 125˚C
J
VSK.136.. Series Per Junction
T = 25˚C
J
T = 125˚C
J
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAKTM Power Modules)
1
thJC
Transient Thermal Impedance Z
0.001
Fig. 31 - Thermal Impedance Z
thJC
Steady State Value
(DC Operation)
0.1
0.01
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
1
Steady State Value
(DC Operation)
0.1
VSK.136.. Series
Characteristics
thJC
10
VSK.142.. Series
Instantaneous On-state Current (A)
1
012345
Instantaneous On-state Voltage (V)
Per Junction
Fig. 29 - On-State Voltage Drop Characteristics
10000
1000
100
10
Instantaneous On-state Current (A)
1
012345
Instantaneous On-state Voltage (V)
T = 25˚C
J
T = 125˚C
J
VSK.162.. Series Per Junction
Fig. 30 - On-State Voltage Drop Characteristics
Transient Thermal Impedance Z
0.01
0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 32 - Thermal Impedance Z
1
thJC
Transient Thermal Impedance Z
Steady State Value
(DC Operation)
0.1
0.01
0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 33 - Thermal Impedance Z
VSK.142.. Series
thJC
VSK.162.. Series
thJC
Characteristics
Characteristics
www.vishay.com For technical questions, contact: [email protected]
Document Number: 94513
10 Revision: 25-Apr-08
Page 11
VSK.136, .142, .162..PbF Series
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAKTM Power Modules)
100
Rectangular gate pulse a)Recommended loa d line for
rated d I/dt: 20 V, 20 W tr = 0.5 s, tp >= 6 s
b)R e co m m e nd e d loa d line fo r
<= 30% rated dI/dt: 15 V, 40 W
10
tr = 1 s, tp >= 6 s
1
In stan ta neou s G a te V o ltage (V )
ORDERING INFORMATION TABLE
Device code
VGD
IG D
0.1
0.001 0.01 0.1 1 10 100 1000
VSK T 162 / 16 PbF
Thyristor/Diode and
(a)
(b)
T
J
= -40 °C
T
J
T
= 25 °C
J
= 125 °C
VSK.136..142..162.. Series
Instan tan eo us G ate C urren t (A)
Fig. 34 - Gate Characteristics
Frequency Limited by PG(AV )
Vishay High Power Products
(1) PGM = 200 W , tp = 300 s (2) PGM = 60 W , tp = 1 m s (3) PGM = 30 W , tp = 2 m s (4) PGM = 12 W , tp = 5 m s
(4) (3)
(2) (1 )
- Module type
1
- Circuit configuration
2
- Current rating: I
3
- Voltage code x 100 = V
4
- PbF = Lead (Pb)-free
5
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
VSKT...
~
+
+
-
K1 K2
G1 G2
-
-
VSKH...
+
T(AV)
51324
RRM
VSKL...
~
+
~
+
+
-
K1 G1
-
-
K2
G2
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95067
Document Number: 94513 For technical questions, contact: [email protected] Revision: 25-Apr-08 11
www.vishay.com
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