Datasheet VS-HFA04TB60SPbF DataSheet (Vishay)

Page 1
VS-HFA04TB60SPbF
D2PAK
PRODUCT SUMMARY
V
R
V
at 4 A at 25 °C 1.8 V
F
I
F(AV)
(typical) 17 ns
t
rr
T
(maximum) 150 °C
J
Q
at 125 °C 40 nC
rr
dI
/dt at 125 °C 280 A/μs
(rec)M
HEXFRED
®
Ultrafast Soft Recovery Diode, 4 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
RRM
rr
• Specified at operating temperature
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA04TB60S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 4 A continuous current, the VS-HFA04TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED extremely low values of peak recovery current (I does not exhibit any tendency to “snap-off” during the t
portion of recovery. The HEXFRED features combine to
b
offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA04TB60S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
N/C
2
1
3
Anode
600 V
4 A
®
product line features
RRM
) and
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94036 For technical questions, contact: [email protected] Revision: 19-Feb-10 1
J
F
FSM
FRM
, T
R
TC = 100 °C 4
D
TC = 25 °C 25
T
= 100 °C 10
C
Stg
600 V
25
16
W
- 55 to + 150 °C
www.vishay.com
ASingle pulse forward current I
Page 2
VS-HFA04TB60SPbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 4 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage
Maximum forward voltage V
Maximum reverse leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr
rr1
rr2
rr1
rr2
Reverse recovery time See fig. 5, 6
Peak recovery current
Reverse recovery charge See fig. 7
Peak rate of fall of recovery current during t
b
See fig. 8
IR = 100 μA 600 - -
IF = 4.0 A
I
= 8.0 A - 1.8 2.2
F
I
= 4.0 A, TJ = 125 °C - 1.4 1.7
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 44 300
J
VR = 200 V See fig. 3 - 4.0 8.0 pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
See fig. 1
See fig. 2
-1.51.8
- 0.17 3.0
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 17 -
TJ = 25 °C
-2842
TJ = 125 °C - 38 57
TJ = 25 °C - 2.9 5.2
TJ = 125 °C - 3.7 6.7
TJ = 25 °C - 40 60
TJ = 125 °C - 70 105
I
= 4.0 A
F
dI
/dt = 200 A/μs
F
V
= 200 V
R
/dt1 TJ = 25 °C - 280 -
/dt2 TJ = 125 °C - 235 -
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance, junction to case
Thermal resistance, junction to ambient
lead
R
thJC
R
thJA
Weight
Marking device Case style D
www.vishay.com For technical questions, contact: [email protected] 2 Revision: 19-Feb-10
0.063" from case (1.6 mm) for 10 s - - 300 °C
--5.0
K/W
Typical socket mount - - 80
-2.0- g
-0.07- oz.
2
PAK HFA04TB60S
Document Number: 94036
Page 3
VS-HFA04TB60SPbF
100
10
0.1
- Instantaneous Forward Current (A)
F
I
94036_01
Ultrafast Soft Recovery Diode, 4 A
TJ = 150 °C
= 125 °C
T
1
01234 65
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
J
= 25 °C
T
J
100
HEXFRED
®
1000
100
10
1
0.1
- Reverse Current (μA)
R
I
0.01
0.001 0 100 200 300 400 500
94036_02
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
TJ = 25 °C
10
- Junction Capacitance (pF)
T
C
1
1101001000
94036_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.50 D = 0.20
0.1
- Thermal Response
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1
94036_04
Single pulse
(thermal response)
Fig. 4 - Maximum Thermal Impedance Z
D = 0.10 D = 0.05 D = 0.02 D = 0.01
t1 - Rectangular Pulse Duration (s)
Characteristics
thJC
P
DM
t
1
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t
2
1/t2
+ T
thJC
C
1
Document Number: 94036 For technical questions, contact: [email protected]
www.vishay.com
Revision: 19-Feb-10 3
Page 4
VS-HFA04TB60SPbF
Vishay High Power Products
50
45
40
35
(ns)
rr
t
30
VR = 200 V
25
TJ = 125 °C TJ = 25 °C
20
100 1000
94036_05
dIF/dt (A/μs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
14
IF = 8 A
12
10
= 4 A
I
F
IF = 8 A
= 4 A
I
F
HEXFRED
®
Ultrafast Soft Recovery Diode, 4 A
200
VR = 200 V
180
TJ = 125 °C TJ = 25 °C
160
140
IF = 8 A
= 4 A
I
F
80
60
40
20
0
100 1000
Fig. 7 - Typical Stored Charge vs. dI
IF = 8 A
= 4 A
I
F
(nC)
rr
Q
94036_07
120
100
1000
dIF/dt (A/μs)
/dt
F
(A)
rr
I
94036_06
8
6
4
2
0
100 1000
VR = 200 V
= 125 °C
T
J
TJ = 25 °C
dIF/dt (A/μs)
Fig. 6 - Typical Recovery Current vs. dI
/dt
F
/dt (A/μs)
(rec)M
dI
94036_08
VR = 200 V
= 125 °C
T
J
TJ = 25 °C
100
100 1000
dIF/dt (A/μs)
Fig. 8 - Typical dI
/dt vs. dIF/dt
(rec)M
www.vishay.com For technical questions, contact: [email protected]
Document Number: 94036
4 Revision: 19-Feb-10
Page 5
VS-HFA04TB60SPbF
HEXFRED
®
Ultrafast Soft Recovery Diode, 4 A
= 200 V
V
R
0.01 Ω
L = 70 μH
(3)
a
(2)
D
IRFP250
S
t
rr
I
RRM
(4) Q and I
(5) dI current during t
dIF/dt
adjust
G
Fig. 9 - Reverse Recovery Parameter Test Circuit
I
F
0
dIF/dt
(1)
(1) dI
/dt - rate of change of current
F
through zero crossing
(2) I
- peak reverse recovery current
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative going I through 0.75 I extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
RRM
t
D.U.T.
t
b
(4)
Q
rr
0.5 I
RRM
(rec)M
Q
rr
(5)
/dt
trr x I
=
portion of t
b
RRM
2
rr
dI
0.75 I
RRM
- area under curve dened by t
rr
RRM
/dt - peak rate of change of
(rec)M
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94036 For technical questions, contact: [email protected]
www.vishay.com
Revision: 19-Feb-10 5
Page 6
VS-HFA04TB60SPbF
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
VS- HF A 04 TB 60 S TRL PbF
1 - HPP product suffix
2 - HEXFRED® family
- Process designator: A = Electron irradiated
3
- Current rating (04 = 4 A)
4
- Package outline (TB = TO-220, 2 leads)
5
- Voltage rating (60 = 600 V)
6
- S = D2PAK
7
- None = Tube (50 pieces)
8
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
- PbF = Lead (Pb)-free
9
HEXFRED
®
Ultrafast Soft Recovery Diode, 4 A
324
51
6789
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
www.vishay.com For technical questions, contact: [email protected] 6 Revision: 19-Feb-10
Document Number: 94036
Page 7
DIMENSIONS in millimeters and inches
c
B
Detail A
c2
AA
A
± 0.004
B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c)
c1
Base Metal
Plating
Conforms to JEDEC outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010
A
B
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Outline Dimensions
Vishay Semiconductors
D2PAK
SYMBOL
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Document Number: 95046 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 31-Mar-11 [email protected]
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Dimensioning and tolerancing per ASME Y14.5 M-1994 Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body Thermal pad contour optional within dimension E, L1, D1 and E1 Dimension b1 and c1 apply to base metal only Datum A and B to be determined at datum plane H Controlling dimension: inch Outline conforms to JEDEC outline TO-263AB
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
This document is subject to change without notice.
MILLIMETERS INCHES
www.vishay.com/doc?91000
NOTES
Page 8
Legal Disclaimer Notice
Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1
Loading...