Datasheet VS-HFA04TB60PbF DataSheet (Vishay)

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VS-HFA04TB60PbF

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 4 A

Base

cathode

Cathode Anode

TO-220AC

PRODUCT SUMMARY

Package TO-220AC

F(AV)

at I

typ. 17 ns

max. 150 °C

Diode variation Single die

4 A

600 V

1.8 V

HEXFRED

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA04TB60PBF is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 4 A continuous current, the VS-HFA04TB60PBF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED extremely low values of peak recovery current (I does not exhibit any tendency to “snap-off” during the

portion of recovery. The HEXFRED features combine to

offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA04TB60PBF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

RRM

and Q

product line features

) and

RRM

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

Document Number: 94035 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 23-May-11 [email protected]

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

FSM

FRM

, T

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TC = 100 °C 4

TC = 25 °C 25

= 100 °C 10

Stg

600 V

- 55 to + 150 °C

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ASingle pulse forward current I

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VS-HFA04TB60PbF

Vishay Semiconductors

HEXFRED

Ultrafast Soft Recovery Diode, 4 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode breakdown voltage

Maximum forward voltage V

Maximum reverse leakage current

Junction capacitance C

Series inductance L

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time See fig. 5, 6 and 16

Peak recovery current See fig. 7 and 8

Reverse recovery charge See fig. 9 and 10

Peak rate of fall of recovery current during t See fig. 11 and 12

IR = 100 μA 600 - -

IF = 4.0 A

rr1

rr2

RRM1

RRM2

rr1

rr2

/dt1 TJ = 25 °C - 280 -

(rec)M

/dt2 TJ = 125 °C - 235 -

(rec)M

= 8.0 A - 1.8 2.2

= 4.0 A, TJ = 125 °C - 1.4 1.7

VR = VR rated

= 125 °C, VR = 0.8 x VR rated - 44 300

VR = 200 V See fig. 3 - 4.0 8.0 pF

Measured lead to lead 5 mm from package body

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 17 -

TJ = 25 °C

TJ = 125 °C - 38 57

TJ = 25 °C - 2.9 5.2

TJ = 125 °C - 3.7 6.7

TJ = 25 °C - 40 60

TJ = 125 °C - 70 105

= 4 A

/dt = 200 A/μs

= 200 V

See fig. 1

See fig. 2

-1.51.8

- 0.17 3.0

-8.0-nH

-2842

μA

nst

A/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Thermal resistance, junction to case

Thermal resistance, junction to ambient

Thermal resistance, case to heatsink

lead

thJC

thA

thS

Weight

Mounting torque

Marking device Case style TO-220AC HFA04TB60

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

0.063" from case (1.6 mm) for 10 s - - 300 °C

--5.0

Typical socket mount - - 80

Mounting surface, flat, smooth and greased - 0.5 -

-2.0- g

-0.07- oz.

6.0

(5.0)

(10)

kgf · cm

(lbf · in)

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K/W

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HEXFRED

0 62

VFM - Forward Voltage Drop (V)

- Instantaneous Forward Current (A)

100

0.1

TJ = 150 °C T

= 125 °C

= 25 °C

Ultrafast Soft Recovery Diode, 4 A

1000

100

VS-HFA04TB60PbF

Vishay Semiconductors

TJ = 150 °C

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

100

- Junction Capacitance (pF)

1 10 100 1000

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

- Reverse Current (µA)

TJ = 25 °C

VR - Reverse Voltage (V)

0.1

0.01

0.001

100 200

TJ = 125 °C

TJ = 25 °C

VR - Reverse Voltage (V)

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage

300 500400

Document Number: 94035 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 23-May-11 [email protected]

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

0.1

- Thermal Response

thJC

0.01

0.00001 0.0001 0.001 0.01 0.1 1

Single pulse

(thermal resistance)

Fig. 4 - Maximum Thermal Impedance Z

D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01

t1 - Rectangular Pulse Duration (s)

Characteristics

thJC

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This document is subject to change without notice.

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

1/t2

+ T

thJC

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VS-HFA04TB60PbF

100

1000

dIF/dt (A/µs)

(ns)

IF = 8 A I

= 4 A

VR = 200 V T

= 125 °C

= 25 °C

100

1000

(A)

IF = 8 A I

= 4 A

VR = 200 V T

= 125 °C

= 25 °C

dIF/dt (A/µs)

Vishay Semiconductors

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt

HEXFRED

Ultrafast Soft Recovery Diode, 4 A

200

VR = 200 V

180

160

140

120

100

(nC)

100

Fig. 7 - Typical Stored Charge vs. dI

= 125 °C = 25 °C

IF = 8 A

= 4 A

dIF/dt (A/µs)

1000

/dt

1000

IF = 8 A

= 4 A

/dt (A/µs)

(rec)M

VR = 200 V

= 125 °C

= 25 °C

100

dIF/dt (A/µs)

Fig. 6 - Typical Recovery Current vs. dI

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/dt

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This document is subject to change without notice.

Fig. 8 - Typical dI

/dt vs. dIF/dt

(rec)M

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1000

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HEXFRED

0.5 I

RRM

(rec)M

/dt

0.75 I

RRM

dIF/dt

(1)

(2)

(3)

(4)

(5)

(1) dI

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

- reverse recovery time measured from zero crossing point of negative going I

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

- area under curve dened by t

and I

RRM

trr x I

RRM

(5) dI

(rec)M

/dt - peak rate of change of

current during t

portion of t

Ultrafast Soft Recovery Diode, 4 A

= 200 V

0.01 Ω

L = 70 μH

D.U.T.

VS-HFA04TB60PbF

Vishay Semiconductors

dIF/dt

adjust

IRFP250

Fig. 9 - Reverse Recovery Parameter Test Circuit

Document Number: 94035 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 23-May-11 [email protected]

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 10 - Reverse Recovery Waveform and Definitions

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VS-HFA04TB60PbF

2 - HEXFRED

family

4 - Current rating (04 = 4 A)

5 - Package:

4 TB = TO-220AC

Electron irradiated

- Voltage rating (60 = 600 V)

Tube standard pack quantity: 50 pieces

1 - Vishay Semiconductors product

- PbF = Lead (Pb)-free

Device code

51 32 4 6 7

VS- HF A 04 TB 60 PbF

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 4 A

ORDERING INFORMATION TABLE

HEXFRED

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95221

Part marking information www.vishay.com/doc?95224

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DIMENSIONS in millimeters and inches

(6)

(7)

(6)

Ø P

0.014 AB

Detail B

(6)

(7)

TO-220AC

Seating

plane

Outline Dimensions

Vishay Semiconductors

123

DL1D

Thermal pad

D2 (6)

E1 (6)

2 x b2 2 x b

Lead assignments

Diodes 1 + 2 - Cathode

3 - Anode

Detail B

Lead tip

SYMBOL

0.015 AB

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

View A - A

Conforms to JEDEC outline TO-220AC

MILLIMETERS INCHES

NOTES

A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6

A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7

A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105

b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208

b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7

b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552

b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2

c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084

c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2

D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147

D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118

D2 11.68 12.88 0.460 0.507 6  90° to 93° 90° to 93°

E 10.11 10.51 0.398 0.414 3, 6

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body

(4)

Dimension b1, b3 and c1 apply to base metal only

(5)

Controlling dimension: inches

(6)

Thermal pad contour optional within dimensions E, H1, D2 and E1

(7)

Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed

(8)

Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline

Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 07-Mar-11 [email protected]

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