Datasheet VSC7991X, VSC7991CD Datasheet (VITESSE)

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7991

Electroabsorption Modulator/Laser Diode Driver

SONET/SDH 10.7Gb/s

Features

• Maximum Rise/Fall Times of 38ps

• High-Speed Operation
(Up to 10.7Gb/s NRZ Data)

• Differential Inputs

• Single-Supply

• CML-Compatible Data Inputs

• On-Chip 50Ω Input Terminations

• 50Ω Output Impedance

General Description

The VSC7991 is a single 7V supply, 10.7Gb/s Electroabsorption Modulator (EAM)/laser diode driver with

direct access to the laser modulation FETs. Laser offse t and modul at ion current s are set by external comp onent s
allowing precision moni t ori ng and setting of the voltage leve ls. Data inputs are differenti al ly t er min ated to 50Ω.

Applications

• SONET/SDH @ 2.488Gb/s, 9.952Gb/s, 10.7Gb/s

VSC7991 Block Diagram

(1)

50Ω

DIN

NDIN

Note: (1) On-die components.

50Ω

(1)

60Ω

(1)

60Ω

(1)

DCC

VIP

(1)

300Ω

I

MOD

IP

300Ω

NDOUT
DOUT

(1)

IB
IBN

G52321-0, Rev 2.3 Page 1
02/26/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: prodinfo@vitess e.com

Internet: www.vitesse.com

VITESSE

SEMICONDUCTOR CORPORATION

SDH/SONET 10.7Gb/s

Advance Product Information

Electroabsorption Modulator/Laser Diode Driver

AC Characteristics (Over recommended operating conditions)

Table 1: High Speed Inputs /Outputs

Symbol Parameter Min Typ Max Units Conditions

IRL Input Return Loss, 50Ω System  −15  dB 50MHz to 10GHz
ORL Output Return Loss, 50Ω System

 −12  dB 50MHz to 10GHz

T able 2: Laser Driver AC Electrical Specifications

Symbol Parameter Min Typ Max Units Conditions

tR t

F

Jitter Output Jitter 15 ps/p-p 50Ω Load, V

Output Rise and Fall Times 38 ps

Overshoot/Undershoot −10  +10 %
Duty-Cycle −25  +25 %

50Ω load, 20% to 80%, V
= 3V

DCC in the range of V

0.5V to V

DC Characteristics (Over recommended operating conditions)

Table 3: Power Dissipation

VSC7991

= 3V

MOD

SS

SS

+2V

MOD

−

Symbol Parameter Min Typ Max Units Conditions

= −6.8, RL = 50Ω to GND,

V

I

P

VSS

D

Power Supply Current (V

Total Power Dissipation  2040 2244 mW

)  300 330 mA

SS

SS

I

= 120mA, V

MOD

= −6.8, RL = 50Ω to GND

V

SS

= 120mA, V

I

MOD

BIAS

BIAS

= 0V

= 0V

T able 4: Laser Driver DC Electrical Specifications

Symbol Parameter Min Typ Max Units Conditions

V

BIAS

V

MOD

V

OCM

IB, IBN L aser Bias Control Voltage −10  0V

V

IP

V

IH

V

IL

V

SW

DCC Duty-Cycle Control

NOTE: DIN and NDIN inputs need to be driven di ff erentially. If single-ended drive is desired, it is necessary to add a DC bias to the unused pin.

Programmable Output Offset Voltage −0.8  0V
Modulation Voltage Amplitude 1.5  3V
Output Voltage Compliance  4  V

Laser Modulation Control Voltage V

Input High Voltage −150  0mV
Input Low Voltage −1.00  −0.60 V

(1)

Input Voltage Swing 450  1000 mVp-p

SS

VSS −

0.5V





VSS +

0.7

VSS+

2V

V

Page 2 G52321-0, Rev 2.3

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

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Internet: www.vitesse.com

02/26/01

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7991

Absolute Maximum Ratings

Negative Power Supply Voltage (VSS)..............................................................................................VCC to −8.0V

All Pins............................................... ........ ................................................................ .........................V

Supply Voltage (V
Supply Current (I
Input Voltage (V
Output Voltage (V
Modulation Control Voltage (V

Output Offset Control Voltage (IB, IBN)..........................................................................................................11V

Output Offset Control Current (I

Maximum Junction Temperature Range .....................................................................................−55°C to +125°C

Storage Temperature Range: .......................................................................................................−55°C to +125°C

Note:
(1) CAUTION: Stresses listed under “Absolut e Maximum Ratings” may be applied to devices one at a time without causing per-

manent damage . Fu nctionality at or above th e va lues listed is not implied . Ex p os u re to these values fo r ex te nd e d p e r iod s m ay
affect device reliability.

) ......................................................................................................................................... 8V

SS

)....................................................................................................................................500mA

SS

)........................................................................................................................................−2.0V

IN

)................................................................................................................................. −4.0V

OUT

).........................................................................................................VSS − 0.5V

IP

) .............................................................................................................. 50mA

IB

(1)

Electroabsorption Modulator/Laser Diode Driver

SONET/SDH 10.7Gb/s

SS

Recommended Operating Conditions

Positive Voltage Rail (GND).............................................................................................................................. 0V

Negative Voltage Rail (V
Operational Case Temperature (T

)...........................................................................................................−6.5V to −7.2V

SS

) ...................................................................................................0°C to 75°C

C1

to + .5V

G52321-0, Rev 2.3 Page 3
02/26/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

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Internet: www.vitesse.com

Page 4 G52321-0, Rev 2.3

SDH/SONET 10.7Gb/s

Electroabsorption Modulator/Laser Diode Driver

Bare Die Descriptions

2354µm (0.0927")

GND

GND

VSS

VSS

VSS

GND

GND

GND

GND

IB

IB

GND

Pad 37

Pad 38

Pad 34

Pad 35

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

GND

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1754µm

(0.0691")

Pad 33

DOUT

Pad 32

GND

Pad 31

GND

Pad 30

GND

Pad 29

GND

Pad 28

Pad 36

Pad 39

Pad 40

GND

Pad 41

VSC7991

Pad 42

Pad 43

Pad 44

VSS

Pad 45

Pad 46

Pad 47

GND

Pad 48

GND
Pad 1

NDIN
Pad 2

GND
Pad 3

GND
Pad 4

GND
Pad 5

GND
Pad 6

50µm

(0.002")

VITESSE

SEMICONDUCTOR CORPORATION

Figure 1: Pad Assignments

GND

Pad 11

GND
Pad 7

DIN

Pad 8
GND

Pad 9

NC

Pad 10

(0.002")

Advance Product Information

50µm

VSC7991

GND

Pad 27

NDOUT

Pad 26

GND

Pad 25

GND

IBN

IBN

Pad 24

Pad 23

NOTE: All dimensions are in micrometers. The 48 pads specified in the pad coordinates were merged into 24 larger pads.
Die Size: 2354µm x 1754µm (0.0927" x 0.0691")

Die Thickness: 381µm (0.015")
Pad Pitch: 150µm (0.0059")
Pad Size: 116µm x 116µm (0.0046" x 0.0046")
Pad Passivation Opening: 100µm x 100µm (0.0039" x 0.0039")
Scribe Size: 50µm (0.002")

IP

Pad 22IPPad 21

Pad 20

GND

Pad 19

VIP

Pad 18

VSS

Pad 17

VSS

Pad 16

VSS

Pad 15

VSS

Pad 14

DCC

Pad 13

GND

Pad 12

02/26/01

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7991

Table 5: Pad Coordinates

Pad

Number

1 GND 2296 1546 25 GND 58 208
2 NDIN 2296 1396 26 NDOUT 58 358
3 GND 2296 1246 27 GND 58 508
4 GND 2296 1061.5 28 GND 58 692.5
5 GND 2296 877 29 GND 58 877
6 GND 2296 692.5 30 GND 58 1061.5
7 GND 2296 508 31 GND 58 1246
8 DIN 2296 358 32 DOUT 58 1396

9 GND 2296 208 33 GND 58 1546
10 NC 2296 58 34 IB 58 1696
11 GND 2146 58 35 IB 208 1696
12 GND 1996 58 36 GND 358 1696
13 VDCC 1846 58 37 GND 508 1696
14 VSS 1696 58 38 GND 658 1696
15 VSS 1546 58 39 GND 808 1696
16 VSS 1396 58 40 GND 958 1696
17 VSS 1246 58 41 GND 1108 1696
18 VIP 1027 58 42 VSS 1258 1696
19 GND 808 58 43 VSS 1408 1696
20 GND 658 58 44 VSS 1558 1696
21 IP 508 58 45 VSS 1708 1696
22 IP 358 58 46 GND 1858 1696
23 IBN 208 58 47 GND 2008 1696
24 IBN 58 58 48 GND 2158 1696

Signal

Name

Coordinates (µm)

X Y X Y

SONET/SDH 10.7Gb/s

Electroabsorption Modulator/Laser Diode Driver

Pad

Number

Signal

Name

Coordinates (µm)

G52321-0, Rev 2.3 Page 5
02/26/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

VITESSE

SEMICONDUCTOR CORPORATION

SDH/SONET 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver

Package Pin Descriptions

Figure 2: Pin Identification

GND

GND

VSS

VSS

32

31

30

29

GND
GND

NDIN

GND
GND

DIN
GND
GND

1
2
3
4
5
6
7
8

VSC7991

T op Vie w

GND

GNDIBGND

28

27

Advance Product Information

VSC7991

26

25

24
23
22
21
20
19
18
17

GND
GND
DOUT
GND
GND
NDOUT
GND
GND

9

10

11

12

13

14

15

16

IP

VSS

VIP

VSS

DCC

GND

Page 6 G52321-0, Rev 2.3

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

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Internet: www.vitesse.com

IBN

GND

02/26/01

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7991

Table 6: Pin Identifications

Pin # Name Type Level Description

1 GND Pwr Pwr Positive Voltage Rail
2 GND Pwr Pwr Positive Voltage Rail
3 NDIN In CML Complementary Data In
4 GND Pwr Pwr Positive Voltage Rail
5 GND Pwr Pwr Positive Voltage Rail
6 DIN In CML Data In
7 GND Pwr Pwr Positive Voltage Rail
8 GND Pwr Pwr Positive Voltage Rail

9 GND Pwr Pwr Positive Voltage Rail
10 DCC In DC Duty-Cycle Control Voltage
11 VSS Pwr Pwr Negative Voltage Rail
12 VSS Pwr Pwr Negative Voltage Rail
13 VIP In DC Modulation Control Voltage
14 IP In DC Modulation Current Monitor
15 IBN In DC Data Offset Control Current (complementary)
16 GND Pwr Pwr Positive Voltage Rail
17 GND Pwr Pwr Positive Voltage Rail
18 GND Pwr Pwr Positive Voltage Rail
19 NDOUT Out Laser Modulation Current Output (complemen ta ry)
20 GND Pwr Pwr Positive Voltage Rail
21 GND Pwr Pwr Positive Voltage Rail
22 DOUT Out Laser Modu la tion Current Output
23 GND Pwr Pwr Positive Voltage Rail
24 GND Pwr Pwr Positive Voltage Rail
25 GND Pwr Pwr Positive Voltage Rail
26 IB In DC Data Offset Control Current
27 GND Pwr Pwr Positive Voltage Rail
28 GND Pwr Pwr Positive Voltage Rail
29 VSS Pwr Pwr Negative Voltage Rail
30 VSS Pwr Pwr Negative Voltage Rail
31 GND Pwr Pwr Positive Voltage Rail
32 GND Pwr Pwr Positive Voltage Rail

SONET/SDH 10.7Gb/s

Electroabsorption Modulator/Laser Diode Driver

NOTE: A voltage HIGH on the data input (pin 6) corresponds to a voltage HIGH on the data output (pin 22).

G52321-0, Rev 2.3 Page 7
02/26/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

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Internet: www.vitesse.com

VITESSE

SEMICONDUCTOR CORPORATION

SDH/SONET 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver

Package Information

Advance Product Information

VSC7991



DIMS TOL. DIM

 A REF 0.054

 A1 ±0.003 0.003

 A2 REF 0.050

 D ±0.010 0.321

 D1 ±0.005 0.225

 E ±0.010 0.321

 E1 ±0.005 0.225

 L ±0.005 0.021

 e REF 0.0256

 b TYP 0.011

 ddd N/A 0.004



θ

 N/A 0° - 10°

CCC MAX 0.004

 R1 ±0.003 0.005

 R ±0.003 0.005

Shoulder

-

 0.020

θ

All dimens ions in inches.

Page 8 G52321-0, Rev 2.3

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

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Internet: www.vitesse.com

02/26/01

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7991

Ordering Informatio n

The order number for this product is formed by a combination of the device number, and package style.

Device Type

VSC7991:

SONET/SDH 10.7Gb/s Laser Diode Driver

VSC7991

SONET/SDH 10.7Gb/s

Electroabsorption Modulator/Laser Diode Driver

xx

Package Style

CD: Metal Glass with Metal Lid—Formed Leads

X : Bare Die

Notice

Vitesse Semiconductor Corporation (“Vitesse”) provides this document for informational purposes only. This document contains pre-production
information about Vitesse products in their conce pt, development and/or testi ng phase. All informaiton in this document, including de scriptions of
features, f u nctions, performance, technical specifications and av ailability , is subject to ch ange without notice at any time. Nothing contained in this
document shall be con stru ed a s e xtend ing any w arr anty or prom ise, exp ress or im plied , th at a ny Vitesse produ ct wi ll b e av ail able as described or
will be suitable for or will accompli sh any particular task.

Vitesse products are not intended for use in life support appliances, devices or systems. Use of a Vitesse product in such applications without writ­ten consent is prohibited.

G52321-0, Rev 2.3 Page 9
02/26/01

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Internet: www.vitesse.com

VITESSE

SEMICONDUCTOR CORPORATION

SDH/SONET 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver

This page left intentionally blank.

Advance Product Information

VSC7991

Page 10 G52321-0, Rev 2.3

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

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Internet: www.vitesse.com

02/26/01