Datasheet VSC7928 Datasheet (VITESSE)

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Preliminary Da ta Sheet

VITESSE

SEMICONDUCTOR CORPORATION

VSC7928

SONET/SDH 3.2Gb/s Laser Diode Driver

Features Applications

• Rise Times Less Than 100ps

• High Speed Operation
(Up to 3.2Gb/s NRZ Data)

• Differential or Single-Ended Inputs

• Single Supply

• ECL Compatible Clock and Data Inputs

• Direct Access to Modulation and Bias FETs

• Data Density Monitors

• On-chip Reclocking Register

• On-chip Mux for Clocked or Non-clocked Appli­cations

• On-chip 50

Ω Input Termination: Clock and Data

• Enhanced Pinout

• SONET/SDH @ 622Mb/s, 1.244Gb/s,

2.488Gb/s, and 3.125Gb/s

• Full Speed Fibre Channel (1.062Gb/s)

General Description

The VSC7928 is a single 5V supply, 3.2Gb/s laser diode driver with direct access to the laser modulation
and bias FETs. Laser bias and modulation currents are set by external components allowing precision monitor­ing and setting of the current levels. Data density outputs are provided to allow the user to adjust the laser bias
in high unbalanced data applications. Clock and data inputs are differentially terminated to 50

Ω.

VSC7928 Block Diagram

MK

NMK

DIN

DINTERM*

NDIN

CLK

CLKTERM*

NCLK

*Terminated to Off-chip Capacitor

**On Die Components

G52246-0, Rev 3.0 Page 1
04/05/01

**

50 Ω

**

50 Ω

**

50 Ω

**

50 Ω

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

DQ

M
U
X

VIP

VIB

SEL

Internet: www.vitesse.com

DCC

MIP

I

MOD

MIB

IOUT

NIOUT

IBIAS

I

BIAS

VITESSE

SEMICONDUCTOR CORPORATION

Preliminary Data Sheet

SONET/SDH 3.2Gb/s Laser Diode Driver

Table 1: Signal Pin Reference

Signal Type Level # Pins Description

DIN, NDIN In ECL 2 Data Input and Data Reference, On-chip 50Ω Termination
MK, NMK Out ECL 2 Data Density Differential Outputs
NIOUT Out

IOUT Out
VSS Pwr Pwr 2 Negative Voltage Rail
GND Pwr Pwr 5/6
VIP In DC 1 Modulation Gate Node
MIP In DC 1 Modulation Source Node
VIB I n DC 1 Bias Gate Node
MIB In DC 1 Bias Source Node
IBIAS Out DC 1 Laser Bias Output (To Laser Cathode)
CLK, NCLK In ECL 2 Clock Input and Clock Reference, On-chip 50Ω Termination
DINTERM In DC 1 Data Reference
CLKTERM In DC 1 Clock Reference
DCC In DC 1 Duty Cycle Control, Leave Floating
SEL In DC 1 Clk/Non-clk Data Select
GND/NC Pwr DC 7
T otal Pin s

NOTE: (1) Applicable to 32-pin TQFP package only.

——24/32

— 1 Laser Modulation Current Output (Complementary)
— 1 Laser Modulation Current Output (To Laser Cathode)

(1)

Positive Voltage Rail

(1)

No connection (leave floating or connect to GND)

*

VSC7928

Table 2: Mux Select Logic Table

SEL Mode Select

V

SS

GND Non-clocked Data In

N/C Non-clocked Data In

Clocked Data In

Table 3: Absolute Maximum Ratings

Symbol Rating Limit

V
T
T

SS
J
STG

Negative Power Supply Voltage VCC to -6.0V
Maximum Junction Temperature -55°C to + 125°C
Storage Temperature -65°C to +150°C

Table 4: Recommended Operating Conditions

Symbol Parameter Min Typ Max Units Conditions

GND Positive Voltage Rail — 0 — V
VSS Negative Voltage Rail -5.5 -5.2 -4.9 V
T

Cl

T

J

NOTES: (1) Lower limit of specification is ambient temperature and upper limit is case temperature. (2) See section “Calculation of the
Maximum Case Temperature” for detailed maximum temperature calculations.

Operational Temperature
Junction Temperature ——125 °C

(1)

-40 — 85

(2)

°C Power dissipation = 1.3W

Page 2 G52246-0, Rev 3.0

© VITESSE SEMICONDUCTOR CORPORATION • 741 Ca l le Pl an o • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

04/05/01

Preliminary Da ta Sheet

VITESSE

SEMICONDUCTOR CORPORATION

VSC7928

SONET/SDH 3.2Gb/s Laser Diode Driver

Table 5: High Speed Inputs and ECL Outputs

Symbol Parameter Min Typ Max Units Conditions

V

IN

V

CM

V

OH

V

OL

V

IN

Single-ended Input Voltage Swing 300 — 1500 mVp-p V

CM

= -2.0V

Differential Input Common Mode Range -2.3 — -1.3 V VSS = -5.2V
ECL Output High Voltage -1200 — — mV 50Ω to -2.0V
ECL Output Low Voltage — — -1600 mV 50Ω to -2.0V
On-Chip Terminations 35 — 65 Ω

Table 6: Power Diss ipat ion

Symbol Parameter Min Typ Max Units Conditions

= -5.5V, I

V

I

P

VSS

D

Power Supply Current (VSS) — 80 120 mA

Total Power Dissipation ——700 mW

SS

0mA, MK/NMK open circuit
V

= -5.5V, I

SS

0mA, R

LOAD

MK/NMK terminated 50Ω to -2V

T able 7: Laser Driver DC Electrical Specifications

Symbol Parameter Min Typ Max Units Conditions

I

BIAS

I

MOD

V

V

V

IB

IP

OCM

Programmable Laser Bias Current 2 — 100 mA
Programmable Modulation Current 2 — 100 mA

V

+

Laser Bias Control Voltage ——

Laser Modulation Control Voltag e ——

Output Voltage Compliance —

GND -

3V

SS

2.1

V

SS

2.1

— VV

+

VI

VI

BIAS

MOD

SS

= 50mA

= 60mA

= -5.2V

= I

= I

BIAS

BIAS

=

=

MOD

MOD

= 25Ω to GND,

T able 8: Laser Driver AC Electrical Specifications

Symbol Parameter Min Typ Max Units Conditions

25Ω load, 20%-80%,

tR, t

F

t

SU

t

H

G52246-0, Rev 3.0 Page 3
04/05/01

Output Rise and Fall Times ——100 ps

Data to Clock Setup Time — 50 90 ps
Hold Time 20 50 — ps

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

20mA < I

= 60mA

I

BIAS

—
—

MOD

< 60mA,

VITESSE

SEMICONDUCTOR CORPORATION

Preliminary Data Sheet

SONET/SDH 3.2Gb/s Laser Diode Driver

Figure 1: On-Chip Data and Clock Input Configuration

DIN

(CLK)

DINTERM

(CLKTERM)

NDIN

(NCLK)

X

X
X

*On-chip
Components

50

*

*

50

DINTERM to -2.0V for Differential ECL Inputs

GND GND

4.0K

*

6.4K

*

VSC7928

DATA BUFFER
(CLOCK BUFFER)

VSSVSS

DA T A

SOURCE

CLOCK

SOURCE

Figure 2: Single-Ended Operation

0.1µf

DIN
DINTERM
NDIN

0.1µf
GND

0.1µf

0.1µf

GND

CLK
CLKTERM
NCLK

GND

0.1µf

GND

0.1µf

7928

Page 4 G52246-0, Rev 3.0

© VITESSE SEMICONDUCTOR CORPORATION • 741 Ca l le Pl an o • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

04/05/01

Preliminary Da ta Sheet

VITESSE

SEMICONDUCTOR CORPORATION

VSC7928

SOURCE

SOURCE

SONET/SDH 3.2Gb/s Laser Diode Driver

Figure 3: Single-Ended AC-Coupled

DIN

NDIN

(NCLK)

0.1µf

(CLK)

X

X
X

DIN

(CLK)

X

DINTERM

(CLKTERM)

X

50

50

50

0.1µf

DINTERM

(CLKTERM)

0.1µf

GND

GND

Figure 4: Differential AC-Coupled

0.1µf

0.1µf

GND

4.0K

-2.0V

6.4K

VSS

GND

4.0K

-2.0V

SOURCE

0.1µf

NDIN

(NCLK)

X

GND

Figure 5: Differential DC-Coupled

DIN

(CLK)

X

DINTERM

(CLKTERM)

X

NDIN

(NCLK)

X

-2.0V

50

50

50

6.4K

VSS

GND

4.0K

-2.0V

6.4K

VSS

G52246-0, Rev 3.0 Page 5
04/05/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

VITESSE

SEMICONDUCTOR CORPORATION

Preliminary Data Sheet

SONET/SDH 3.2Gb/s Laser Diode Driver

Figure 6: Control Signals VIP and VIB

I (MIB)

30 mA

Typical Bias Current v.s. Bias Voltage

I (MIP)

60 mA

VSC7928

VIB

VSS + 1.5 Volts (Typical)

VIP

VSS + 1.5 Volts (Typical)

VIP

X

Typical Modulation Current v.s. Modulation Voltage

Figure 7: Simplified Output Structure

NIOUT IOUT

XXX

I

MOD

OUTPUT
DIFF
PAIR

IBIAS

X

I

BIAS

X

MIP

MIB

X

VIB

Page 6 G52246-0, Rev 3.0

© VITESSE SEMICONDUCTOR CORPORATION • 741 Ca l le Pl an o • Camarillo, CA 93012

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Internet: www.vitesse.com

04/05/01

Preliminary Da ta Sheet

VITESSE

SEMICONDUCTOR CORPORATION

VSC7928

50µm

120µm

150µm

30µm

SONET/SDH 3.2Gb/s Laser Diode Driver

Figure 8: Pad Assignments for VSC7928 Die

1720µm

1620µm

PAD 34 PAD 33 PAD 32 PAD 31 PAD 30 PAD 29 PAD 28 PAD 27 PAD 26

120

DCC VSS VSS VSS VSS VIP MIP MIP MIB

PAD 1
N/C

PAD 2
NDIN

PAD 3
DIN

PAD 4
DINT

PAD 5
CLOCKT

PAD 6
CLOCK

PAD 25

VIB

PAD 24

GND

PAD 23

IOUT

PAD 22

IOUT

PAD 21

NIOUT

PAD 20

NIOUT

50µm

50µm

1620µm

1720µm

PAD 7
NCLOCK

PAD 8
N/C

SEL GND GND GND GND GND GND NMARK MARK

PAD 9 PAD 10 PAD 11 PAD 12 PAD 13 PAD 14 PAD 15 PAD 16 PAD 17

PAD 19

GND

PAD 18

IBIAS

50µm

Die Size: 1620µm x 1620µm
Actual Die Size: 1720µmx1720µm (after the die are cut up)
Pad Size: 120µm x 120µm
Pad Pitch: 150µm
Space

Between Pads: 30µm

G52246-0, Rev 3.0 Page 7
04/05/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

VITESSE

SEMICONDUCTOR CORPORATION

Preliminary Data Sheet

SONET/SDH 3.2Gb/s Laser Diode Driver

Package Information - 32 Pin Plastic TQFP Package

VSC7928

Dimension mm Tolerance

A1.60MAX
A1 .10 ±.05
A2 1.40 ±.05

D 9.00 ±.20
D1 7.00 ±.10

E 9.00 ±.20
E1 7.00 ±.10

L.60+.15/-.10

e.80BASIC
b .35 ±.05
θ 0º - 7º

ddd .20 MAX

ccc .10 MAX

Note: Package lid and bottom heat spreader are electrically

connected to GND within the package.

Page 8 G52246-0, Rev 3.0

© VITESSE SEMICONDUCTOR CORPORATION • 741 Ca l le Pl an o • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

04/05/01

Preliminary Da ta Sheet

VITESSE

SEMICONDUCTOR CORPORATION

VSC7928

32-Pin Plastic Package Pin Designation

VSS

DCC

GND

GND

NDIN

DIN

DINT

CLKT

CLK

NCLK

GND

VSS

SONET/SDH 3.2Gb/s Laser Diode Driver

MIB

MIP

VIP

GND

GND

VIB
GND
IOUT
NIOUT
GND
GND
IBIAS

SEL

GND

G52246-0, Rev 3.0 Page 9
04/05/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

GND

Internet: www.vitesse.com

GND

GND

NMK

MK

GND

VITESSE

SEMICONDUCTOR CORPORATION

Preliminary Data Sheet

SONET/SDH 3.2Gb/s Laser Diode Driver

Ordering Informatio n

The order number for this product is formed by a combination of the device number, and package style.

VSC7928

Device Type

VSC7928: 3.2Gb/s Laser Diode Driver

VSC7928

XX

Package Style

RA: 32-Pin QFP Gull Wing Plastic Package
X : Bare Die

Notice

Vitesse Semiconductor Corporation (“Vitesse”) provides this document for informational purposes only. This document contains pre-production
information about Vitesse products in their con ce pt , development and/or testing phase. All information in this document, including description s of
features, functions, performan ce, technical specifications and availability, is subject to change wi th out notice at any ti me. Nothing contained in this
document shall be c ons trued as e xten ding an y w arran ty or pr omise , e xp ress or imp lied , th at a ny Vitesse produ ct wi ll b e av ail able as described or
will be suitable for or will accomp lis h any particular task.

Vitesse products are not intended for use in life support applia nc es, devices or systems. Use of a Vitesse product in such applications without writ­ten consent is prohibited.

Page 10 G52246-0, Rev 3.0

© VITESSE SEMICONDUCTOR CORPORATION • 741 Ca l le Pl an o • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

04/05/01