Datasheet VSC7807X, VSC7807WD, VSC7807WC, VSC7807WB, VSC7807WA Datasheet (VITESSE)

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7807

Photodetector/Transimpedance Amplifier

Family for Optical Communication

Features Applications

• Integrated Photodetector/Transimpedance Amplifier
Optimized for High-Speed Optical Communications
Applications

• Fibre Channel/Gigabit Ethernet-Compatible

• High Bandwidth: 1300MHz

• Low Input Noise Equivalent Power: 2.2µW

• Large Optically Active Area

• Single 3.3V Power Supply

• 2.125Gb/s Data Rate

• 70µm Optically Active Area

• Packages: TO-46, TO-56, Bare Die

• Gigabit Ethernet Optical Receivers

• Fibre Channel Optical Receivers

• ATM Optical Receivers

• SONET/SDH

• System Interconnect

General Description

The VSC7807 integrated Photodetector/Transimpedance Amplifier provides a highly integrated solution
for converting 850nm light from a fiber optic communications channel into a differential output voltage. The
benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide very high
bandwidth and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty
cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. The
VSC7807 is available in either die form, flat-windowed packages or ball-lens packages.

By using a Metal-Semiconductor-Metal (MSM) photodetector with a monolithic integrated transimpedance
amplifier , t he in put capac it ance is lowered which allows for a larger optica ll y act i ve ar ea than i n di scr et e phot o­detectors. Integration also allows superior tracking over process, temperature and voltage between the photode­tector and the amplifier, resulting in higher performance. The VSC7807 can easily be used in developing Fibre
Channel Electro-Optic Receivers which exhibit very high performance and ease of use.

VSC7807 Block Diagram

+3.3V

DOUTP

DOUTN

Both DOUTP and DOUTN are back-terminated to 25Ω.

G52363-0, Rev 2.1 Page 1
04/05/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

VITESSE

SEMICONDUCTOR CORPORATION

Photodetector/Transimpedance Amplifier
Family for Optical Communication

Table 1: Electro-Optical Specifications

Symbol Parameters Min Typ

V

SS

I

DD

PSRR Power Supply Rejection Ratio - -10 - dB

λ Wavelength 700 840 850 nm
F

c

BW Optical Modulation Bandwidt h - 1300 - MHz -3dB, P = -15dBm
S Sensitivity - 20 - dBm 2.488Gb/s, BER10
R

o

V

D

R

D

V

DC

∆V

DC

NEP
V

NO

DCD Duty Cycle Distortion - - 4.5 % P = -5dBm
I

OUT

PDJ Pattern Dependent Jitter - - 40 ps

PPJ PP Jitter - 190 200 ps P = -5dBm
T

R

T

F

NOTES: (1) Specified over 10°C to 90°C junction. (2) Typical conditions 25°C and 3.3V power supply. (3) See Note 1 in Appli-

Supply Voltage 3.0 3.3 3.6 V
Supply Current - - 40 mA

Low Frequency Cutoff - 1.0 2.5 MHz -3dB, P

Single-Ended Ou tput Impedance - 25 - Ω

Differential Output Voltag e 0.2 - - V

Differential Responsivity 1.6 2.0 - mV/µW

Output Bias Voltage 1.0 - - V
Bias Off s e t Voltage - - 200 mV
Input Noise Equivalent Power - 1 2.2 µW rms P = 0mW

O

Output Noise Voltage - - 1.25 mV rms P = 0mW

Output Drive Current 2.0 2.6 - mA P = -5dBm

Optically Active Area - 70 - µm Diameter

Rise Time - - 200 ps 20% to 80% P = -5dBm
Fall Time - - 200 ps 20% to 80% P = -5dBm

cation Note 48. (4) P = Incident Optical Power. (5) See Note 2 In Application Note 48.

(1)

(2)

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VSC7807

Max Units Conditions

Frequencies up to 40MHz.
Use external filter to get PSRR
of -35dB

P = -5 dBm,
R

R
At 50MHz

P = -5dBm
+/-10% Voltage Window

(3)

.

(4)

= -15dBm

= 100Ω differe ntial

L

= 100Ω

L

-12(5)

Page 2 G52363-0, Rev 2.1

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

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Internet: www.vitesse.com

04/05/01

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7807

Absolute Maximum Ratings

Power Supply Voltage (VSS).............................................................................................................................. 6V

Storage Humidity s(relative humidity, including condensation)........................................................... 5% to 95%

Operating Humidity (relative humidity, excluding condensation)........................................................ 8% to 80%

Impact Shock (IS)

Incident Optical Power................................................................................................................................+3dBm

Storage Temperature Range (case temperature under bias)

NOTES: (1) CAUTION: Stresses listed under “Absolute Ma ximum Rat ings ” may be appl ied to devi ces one at a tim e without ca using perm anent

damage. Functionality at or a bove the val ues li sted is no t im plied. E xposure to these v alue s for ex tend ed pe riods may affe ct device reli­ability. (2) Half sine wave, pulse duration 1 ±0.5ms, 3 blows in each di rection.

(2)

....................................................................................................................................... 500G

(1)

Photodetector/Transimpedance Amplifier

Family for Optical Communication

........................................................−55°C to +125°C

Recommended Operating Conditions

Positive Voltage Rail (VSS) ................................................................................................................3.0V to 3.6V

Optical Power................................................................................................................................................ 0dBm

Operating Temperature Range (T

Figure 1: Pin Diagram (TO-46 and TO-56 packages)

)............................................................................0°C Ambient to +85°C Case

A

BottomView

VSS

DOUTP

GND

Table 2: Pin Table Specifications for Ball Lens Packages, Flat Window Packages and Bare Die

Symbol Description

DOUTP Data output normal (with reference to incident light)
DOUTN Data output complement (inverting) (with reference to incident light)

VSS Power supply

GND Ground (package case)

DOUTN

G52363-0, Rev 2.1 Page 3
04/05/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

VITESSE

SEMICONDUCTOR CORPORATION

Photodetector/Transimpedance Amplifier
Family for Optical Communication

Figure 2: Pad Assignments

Pad 3

CLON

835µm

(32.9mils)

Pad 2

CLOP

Pad 4

VGND

Pad 1

VGND

1481

µm (58.3mils)

VSC7807

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VSC7807

Pad 5

VGND

Pad 6

VDD

Die Size: 835µm x 1481µm (32.9mils x 58.3mils)
Die Thickness: 635µm (26mils)
Pad Sizes: 108µm x 108µm (4.3mils x 4.3mils)

Pad Passivation Openings:

Scribe Size: 157µm (6.2mils)

244µm x 108µm (9.6mils x 4.3mils)

86µm x 86µm (3.4mils x 3.4mils)

223µm x 86µm (8.8mils x 3.4mils)

157

µm

(6.2mils)

Table 3: Pad Coordinates

Signal

Name

VGND 1 55 943.6 Ground
CLOP 2 55 1093.6 Data output, true (with reference to incident light)
CLON 3 780 1093.6 Data output, complement (with reference to incident light)
VGND 4 780 943.6 Ground
VGND 5 596.7 61.4 Ground
VDD 6 244.2 61.4 Power Supply

Pad

Number

Coordinates (µm)

Description

X Y

Page 4 G52363-0, Rev 2.1

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Internet: www.vitesse.com

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VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7807

Package Information

TO-46 Flat Window Package

Photodetector/Transimpedance Amplifier

Family for Optical Communication

Reference Isometric

G52363-0, Rev 2.1 Page 5
04/05/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

VITESSE

SEMICONDUCTOR CORPORATION

Photodetector/Transimpedance Amplifier
Family for Optical Communication

TO-56 Flat Window Package

Advance Product Information

VSC7807

Reference Isometric

Page 6 G52363-0, Rev 2.1

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

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Internet: www.vitesse.com

04/05/01

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7807

TO-46 Ball Lens Package—7mm Lead Length

Photodetector/Transimpedance Amplifier

Family for Optical Communication

Reference Isometric

G52363-0, Rev 2.1 Page 7
04/05/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

VITESSE

SEMICONDUCTOR CORPORATION

Photodetector/Transimpedance Amplifier
Family for Optical Communication

TO-46 Ball Lens Package—13mm Lead Length

Advance Product Information

VSC7807

Reference Isometric

Page 8 G52363-0, Rev 2.1

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

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Internet: www.vitesse.com

04/05/01

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7807

Ordering Informatio n

The order number for this product is formed by a combination of the device type and package type.

Device Type

Photodetector/Transimpedance Amplifier

Family for Optical Communication

VSC7807

Photodetector/Transimpedance Amplifier

Family for Optical Communication

xx

Package

WA: TO-46 Flat Window
WB: TO-56 Flat Window
WC: TO-46 Ball Lens—7mm Lead Length
WD: TO-46 Ball Lens—13mm Lead Length
X: Bare Dice

Notice

Vitesse Semiconductor Corporation (“Vitesse”) provides this document for informational purposes only. This document contains pre-production
information about Vitesse products in their con ce pt , development and/or testing p hase . All i nformaiton in this document, including descriptions of
features, functions, performan ce, technical specifications and availability, is subject to change wi th o ut notice at any time. Nothing contained in this
document shall be c ons trued as e xten ding an y w arran ty or pr omise , e xp ress or imp lied , th at a ny Vitesse produ ct wi ll b e av ail able as described or
will be suitable for or will accomp lis h any particular task.

Vitesse products are not intended for use in life support applia nc es, devices or systems. Use of a Vitesse product in such applications without writ­ten consent is prohibited.

G52363-0, Rev 2.1 Page 9
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© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

VITESSE

SEMICONDUCTOR CORPORATION

Photodetector/Transimpedance Amplifier
Family for Optical Communication

Advance Product Information

VSC7807

Page 10 G52363-0, Rev 2.1

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: [phone] • Email: [e-mail]

Internet: www.vitesse.com

04/05/01