Datasheet VSC7709X, VSC7709WD, VSC7709WC, VSC7709WB, VSC7709WA Datasheet (VITESSE)

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7709

1.25Gb/s Photodetector/Transimpedance Amplifier for Optical Communication

G52362-0, Rev 2.1 Page 1 04/02/01

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

Features Applications

General Description

The VSC7709 integrated PIN Photodetector/Transimpedance Amplifier provides a highly integrated solution for converting 1300 nm light from a fiber optic communications channel into a differential output voltage. The benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide a very high bandwidth and low noise a mplifier. The PIN detector is 75

µm in diameter. The detector bias is supplied

internally eliminating the need for a separate bias connection. The sens itivity, duty cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. The VSC7709 is available in flat-windowed or lensed packages. The transimpedance amplifier is also available in bare die form.

The use of a photodetector and transimpedance amplifier hybrid, reduces the input capacitance, resulting in higher sensitivity and bandwidth and improved speed of response. These parts can easily be used in developing Fibre Channel and Gigabit Ethernet electro-optic receivers for the 900nm-1600nm spectral range which exhibit very high performance and ease of use.

Block Diagram

• High Bandwidth: 1100MHz

• Low Input Noise Equivalent Power: 0.5mW

• Single 3.3V Supply

• 1.25Gb/s Data Rate

• 75mm Optically Active Area (PIN diode)

• Integrated AGC

• Package: TO-46, TO-56, Bare Die

+3.3V

D0

D1

• Gigabit Ethernet Optical Receivers

• Fibre Channel Optical Receivers

• ATM Optical Receivers

• System Interconnect

• SONET/SDH

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7709

1.25Gb/s Photodetector/ Transimpedance Amplifier for Optical Communication

Page 2 G52362-0, Rev 2.1

04/02/01

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

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Electrical Characteristics

Table 1: Electro-Optic Specifications

NOTES: (1) Applicable to packaged pa rt s with assembled 1300nm photodetect or with responsivity = 0.8A/W. (2) Applicable to bare dice.

(3) By characterization. See Measurements and Application section.

Absolute Maximum Ratings

(1)

Power Supply Voltage (VDD)...........................................................................................................................+6V

Maximum Junction Temperature Range......................................................................................-55°C to +125°C

Storage Temperature Range.........................................................................................................-55°C to +125°C

Incident Optical Power (P

INC

)....................................................................................................................+3dBm

NOTE: (1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without caus-

ing permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may affect device reliability.

Recommended Operating Conditions

Positive Voltage Rail (VDD)........................................................ ..........................................................3.0 to 3.6V

Negative Voltage Rail (GND)............................................................................................................................0V

Operating Temperature Range (T

A

)...........................................................................0°C Ambient to +85°C Case

Symbol Parameter Min Typ Max Units Conditions

λ Wavelength 1270 1355 nm V

DD

Power Supply Voltage 3.0 3.6 V

I

S

Power Supply Current 30 mA

PSRR Power Supply Rejection Ratio TBD dB

f = 0.3MHz to 40MHz. Hybrid differential with external filter.

BW Optical Modulation Bandwidth 1000 MHz

See Measurements an d Applications section

f

C

Low Frequency Cutoff 2 MHz

See Measurements an d Applications section

R

D

Differential Responsivity 2.5 mV/µW

T

Z

Differential Transimpedance 2000 Ω RL = 100Ω

(1)

R

O

Single-Ended Outp ut Impedance 25 Ω RL = 100Ω

(2)

V

N

Output Noise Voltage 1.2 mV rms BW = 800MHz, P = 0mW

NEP

O

Input Noise Equivalent Optical Power 0.5 µW rms BW = 800MHz, P = 0mW

S Sensitivity -26 dBm BER 10

-12

, B = 1250Mb/s

(3)

∆V Bias Offset Voltage 200 mV P = -3dBm V

D

Differential Output Voltage 0.25 V P = -3dBm, R = 100Ω

PDJ Pattern Dependent Jitter 60 ps

P = -3dBm, ±10% volta ge

window DCD Duty Cycle Distortion 5 % P = -3dBm T

R

/T

F

Rise and Fall Times 400 ps 20% to 80%, P = -3dBm

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7709

1.25Gb/s Photodetector/Transimpedance Amplifier for Optical Communication

G52362-0, Rev 2.1 Page 3 04/02/01

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

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Package Descriptions

Figure 1: Pin Diagram

Table 2: Pin Identification for TO-46 (ball lens) and Bare Die

Symbol Description

D+OUT Data output normal (with reference to incident light) D

–

OUT Data output complement (inverting, with reference to incident light) VDD Power supply GND Ground (package case)

VSS

DOUTN

DOUTP

GND

TO Package BottomView

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7709

1.25Gb/s Photodetector/ Transimpedance Amplifier for Optical Communication

Page 4 G52362-0, Rev 2.1

04/02/01

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Figure 2: Pad Assignments

Pad 3 CLOP

Pad 2

VGND

Pad 10

ANODE

MINUS

Pad 1

VGND

Pad 6

VDD

Pad 9 ANODE MINUS

Pad 8

CATHODE

PLUS

Pad 5

VGND

Pad 4

CLON

Bond Pad

Die Size: 861µm x 1798µm (33.9mil x 70.8mil) Actual Die Size: 961µm x 1898µm (37.8mil x 74.7mil) Die Thickness: 254µm (10mil) Pad Size (A): 110µm x 110µm (4.3mil x 4.3mil) Pad Passivation Opening (A): 86µm x 86µm (3.3mil x 3.3mil)

1798µm (70.8mil)

1898µm (74.7mil)

961

µm (37.8mil)

861

µm (33.9mil)

Pad Size (B): 220µm x 110µm (8.6mil x 4.3mil) Pad Passivation Opening (B): 196µm x 86µm (7.7mil x 3.3mil)

(A)

(A) (A) (A)

(A)

(B) (B)

(A)

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7709

1.25Gb/s Photodetector/Transimpedance Amplifier for Optical Communication

G52362-0, Rev 2.1 Page 5 04/02/01

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

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Table 3: Pad Coordinates

Signal

Name

Pad

Number

Coordinat es (µm)

Description

X Y

VGND 1 110.00 55.00 Ground VGND 2 55.00 1582.40 Ground CLOP 3 55.00 1742.70 Data Output, True (with reference to incident light)

CLON 4 806.00 1742.70

Data Output, Complement (inverting, with reference to

incident light) VGND 5 806.00 1582.40 Ground VDD 6 751.00 55.00 Power Supply CATHODE/PLUS 7 482.50 530.50 Photodetector Cathode Connection CATHODE/PLUS 8 576.50 999.50 Photodetector Cathode Connection ANODE/MINUS 9 301.50 999.50 Photodetector Anode Conn ection ANODE/MINUS 10 181.50 999.50 Photodetector Anode Connection

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7709

1.25Gb/s Photodetector/ Transimpedance Amplifier for Optical Communication

Page 6 G52362-0, Rev 2.1

04/02/01

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

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Package Information

Reference Isometric

TO-46 Flat Window Package

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7709

1.25Gb/s Photodetector/Transimpedance Amplifier for Optical Communication

G52362-0, Rev 2.1 Page 7 04/02/01

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

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TO-56 Flat Window Package

Reference Isometric

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7709

1.25Gb/s Photodetector/ Transimpedance Amplifier for Optical Communication

Page 8 G52362-0, Rev 2.1

04/02/01

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

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TO-46 Ball Lens Package—7mm Lead Length

Reference Isometric

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7709

1.25Gb/s Photodetector/Transimpedance Amplifier for Optical Communication

G52362-0, Rev 2.1 Page 9 04/02/01

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

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TO-46 Ball Lens Package—13mm Lead Length

Reference Isometric

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7709

1.25Gb/s Photodetector/ Transimpedance Amplifier for Optical Communication

Page 10 G52362-0, Rev 2.1

04/02/01

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

Ordering Informatio n

The order number for this product is formed by a combination of the device type and package type.

Notice

Vitesse Semiconductor Corporation (“Vitesse”) provides this document for informational purposes only. This document contains pre-production information about Vitesse products in their conce pt, development and/or testi ng phase. All informaiton in t his document, including de scriptions of features, functions, performan ce, technical specifications and availability, is s ubject to change without notice at any time. Nothing contained in this document shall be co nstru ed as e xten ding an y w arran ty or pr omise , e xpress or imp lied , that any Vitesse product wi ll b e av ail able as described or will be suitable for or will accompli sh any particular task.

Vitesse products are not intended for use in life support applia nc es, devices or systems. Use of a Vitesse product in such applications without written consent is prohibited.

VSC7709

xx

Device Type

Package

Photodetector/Transimpedance Amplifier

WA: TO-46 Flat Window with 1300nm PD WB: TO-56 Flat Window with 1300nm PD WC: TO-46 Ball Lens (7mm leads) with 1300nm PD WD: TO-46 Ball Lens (13mm leads) with 1300nm PD X: Bare Dice without PD

Note: PD = 75µm photodetector

for Optical Communication