Datasheet VSB1545-M3 Specification

VSB1545-M3

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Vishay General Semiconductor

Photovoltaic Solar Cell Protection Schottky Rectifier

Ultra Low VF = 0.33 V at IF = 5.0 A

FEATURES

• Trench MOS Schottky technology

TMBS

P600

®

• Low forward voltage drop, low power losses

• High efficiency operation

• High forward surge capability

• ESD capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

•T

200 °C max. in solar bypass mode application

J

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

I

F(AV)

V

RRM

I

FSM

V

at IF = 15 A 0.44 V

F

T

max. (AC mode) 150 °C

OP

T

max. (DC forward current) 200 °C

J

Package P600

Diode variation Single die

15 A

45 V

200 A

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.

MECHANICAL DATA

Case: P600
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade

Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VSB1545 UNIT

Device marking code V1545

Maximum repetitive peak reverse voltage V

Maximum average forward rectified current (fig. 1)

Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load

Operating junction temperature range T

Storage temperature range T

Junction temperature in DC forward current without
reverse bias, t  1 hp

Notes

(1)

With heatsink

(2)

Without heatsink, free air

(3)

Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test

I

F(AV)

I

F(AV)

I

T

RRM

FSM

OP

STG

J

(1)

(2)

(3)

45 V

15

6

200 A

-40 to +150 °C

-40 to +175 °C

 200 °C

A

Revision: 22-Nov-13

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VSB1545-M3

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ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT

= 5.0 A

I

F

T

= 25 °C

A

V

F

T

= 125 °C

A

T

= 25 °C

A

T

= 125 °C 7.5 25 mA

A

I

R

Instantaneous forward voltage

Reverse current V

I

= 7.5 A 0.46 -

F

I

= 15 A 0.51 0.59

F

I

= 5.0 A

F

IF = 7.5 A 0.36 -

I

= 15 A 0.44 0.54

F

= 45 V

R

Typical junction capacitance 4.0 V, 1 MHz C

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

(2)

Pulse test: 40 ms pulse width

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VSB1545 UNIT

(1)

R

Thermal resistance

Typical thermal resistance R

Notes

(1)

Without heatsink, free air; units mounted on PCB with 2 mm x 2 mm copper pad areas at 9.5 mm lead length

(2)

Leads clipped at 3 mm lead length from plastic body on 7.0 cm x 2.2 cm x 1.9 cm x 2 heatsink

JA

(1)

R

JL

(2)

JL

Vishay General Semiconductor

0.44 -

(1)

(2)

J

0.33 -

11.6 800 μA

1290 - pF

55

3.5

2.5 °C/W

V

°C/W

IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(T

= 25 °C unless otherwise noted)

A

STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE

JESD22-A114 Human body model (contact mode) C = 150 pF, R = 1.5 

V

JESD22-A115 Machine model (contact mode) C = 200 pF, R = 0  C > 400 V

IEC 61000-4-2

(2)

Air discharge mode

(1)

C = 150 pF, R = 330  4 > 15 kV

C

3B > 8 kV

Notes

(1)

Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 25 kV

(2)

System ESD standard

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

VSB1545-M3/54 1.88 54 800 13" diameter paper tape and reel

VSB1545-M3/73 1.88 73 300 Ammo pack packaging

Revision: 22-Nov-13

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Ambient Temperature (°C)

DC Forward Current (A)

8

7

6

5

1

0

0 25 50 75 100 175

4

3

125 150

2

Free Air, without Heatsink

120

0

0 50 100 150 200

Ambient Temperature (°C)

Percentage of Rated Current (%)

100

80

60

40

20

25 75 125 175

DC Current with Heatsink

20 40 60 80 100

1000

100

10

1

100 000

10 000

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Current (µA)

TA = 150 °C

T

A

= 25 °C

TA = 100 °C

TA = 125 °C

100

10 000

0.1 1 10 100

Reverse Voltage (V)

Junction Capacitance (pF)

TJ = 25 °C
f = 1.0 MHz
V

sig

= 50 mV

p-p

1000

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RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve

Vishay General Semiconductor

100

TA = 150 °C

TA = 125 °C

10

1

Instantaneous Forward Current (A)

0.1

0.1 0.2 0.4 0.8

Fig. 4 - Typical Instantaneous Forward Characteristics

0.3 0.5 0.7

Instantaneous Forward Voltage (V)

VSB1545-M3

TA = 100 °C

TA = 25 °C

0.6

Fig. 2 - Rated Forward Current vs. Ambient Temperature

10

9

8

7

6

5

4

3

Average Power Loss (W)

2

1

0

Revision: 22-Nov-13

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

D = 0.2

D = 0.1

02 6 10 1618

Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics

Fig. 5 - Typical Reverse Leakage Characteristics

D = 0.5

D = 0.3

D = 0.8

D = tp/T t

12

D = 1.0

T

p

1448

Fig. 6 - Typical Junction Capacitance

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Document Number: 89390

0.052 (1.32)

0.048 (1.22)

0.360 (9.1)

0.340 (8.6)

DIA.

1.0 (25.4)
MIN.

0.360 (9.1)

0.340 (8.6)

1.0 (25.4)
MIN.

P600

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PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

VSB1545-M3

Vishay General Semiconductor

Revision: 22-Nov-13

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Revision: 13-Jun-16

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