Datasheet VS-8ETX06PbF, VS-8ETX06FPPbF DataSheet (Vishay)

Page 1
VS-8ETX06PbF, VS-8ETX06FPPbF
TO-220AC
TO-220 FULL-PAK
Anode
1
3
Cathode
Base
cathode
2
Anode
1
3
Cathode
VS-8ETX06PbFVS-8ETX06FPPbF
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
PRODUCT SUMMARY
Package TO-220AC, TO-220FP
I
F(AV)
V
R
V
at I
F
F
t
(typ.) 15 ns
rr
T
max. 175 °C
J
Diode variation Single die
8 A
600 V
3.0 V
FEATURES
• Hyperfast recovery time
• Benchmark ultralow forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (V
= 2500 V
INS
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.
These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
RMS
)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage V
Average rectified forward current I
Non-repetitive peak surge current I
Repetitive peak forward current I
Operating junction and storage temperatures T
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94032 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 [email protected]
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
FULL-PAK T
,
V
BR
V
R
IR = 100 μA 600 - -
R
IF = 8 A - 2.3 3.0
F
I
= 8 A, TJ = 150 °C - 1.4 1.7
F
VR = VR rated - 0.3 50
T
= 150 °C, VR = VR rated - 35 500
J
VR = 600 V - 17 - pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
This datasheet is subject to change without notice.
RRM
F(AV)
FSM
FM
, T
J
TC = 143 °C
= 106 °C
C
TJ = 25 °C 110
Stg
600 V
8
A
18
- 65 to 175 °C
V
μA
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Page 2
VS-8ETX06PbF, VS-8ETX06FPPbF
1
10
TJ = 175 °C T
J
= 150 °C
T
J
= 25 °C
100
0 0.5 2.51.5
1.0
3.0 3.5 4.02.0
VF - Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
4.5
0.1
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 15 19
= 8 A, dIF/dt = 100 A/μs, VR = 30 V - 16 24
I
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 40 -
T
J
TJ = 25 °C - 2.3 -
T
= 125 °C - 4.5 -
J
= 8 A
I
F
/dt = 200 A/μs
dI
F
V
= 390 V
R
TJ = 25 °C - 20 -
T
= 125 °C - 100 -
J
I
= 8 A
TJ = 125 °C
F
/dt = 600 A/μs
dI
F
V
= 390 V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDTIONS MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range
Thermal resistance, junction to case
(FULL-PAK) - 3.4 4.3
Thermal resistance, junction to ambient per leg
Thermal resistance, case to heatsink
Weight
Mounting torque
Marking device
T
, T
J
Stg
R
thJC
R
R
thJA
thCS
Typical socket mount - - 70
Mounting surface, flat, smooth and greased - 0.5 -
Case style TO-220AC 8ETX06
Case style TO-220 FULL-PAK 8ETX06FP
®
-17-
-31-ns
-12- A
- 195 - nC
- 65 - 175 °C
-1.42
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
ns
A
nC
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94032 2 [email protected]
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1000
TJ = 175 °C
100
10
1
0.1
0.01
- Reverse Current (µA)
R
I
0.001
0.0001 0 100 200 300 400 500 600
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
VR - Reverse Voltage (V)
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
Reverse Voltage
, [email protected], [email protected] Revision: 28-Apr-11
This datasheet is subject to change without notice.
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Page 3
VS-8ETX06PbF, VS-8ETX06FPPbF
TJ = 25 °C
0
100 200 300 500 600400
1000
100
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
1
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
10
100
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
Hyperfast Rectifier, 8 A FRED Pt
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
®
Vishay Semiconductors
Fig. 4 - Maximum Thermal Impedance Z
Fig. 5 - Maximum Thermal Impedance Z
Document Number: 94032 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 [email protected]
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
Characteristics (FULL-PAK)
thJC
Characteristics
thJC
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Page 4
VS-8ETX06PbF, VS-8ETX06FPPbF
See note (1)
Square wave (D = 0.50) Rated V
R
applied
02468 12
180
170
160
150
140
130
120
I
F(AV)
(A) Average Forward Current
Allowable Case Temperature (°C)
10
DC
Allowable Case Temperature (°C)
DC
See note (1)
Square wave (D = 0.50) Rated V
R
applied
140
100
60
40
180
02468 12
I
F(AV)
- Average Forward Current (A)
80
120
160
10
Average Power Loss (W)
0
2
DC
RMS limit
D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5
0 4 8 10 12 14
I
F(AV)
- Average Forward Current (A)
20
18
16
14
12
6
10
4
8
26
50
40
20
10
100
1000
dIF/dt (A/µs)
t
rr
(ns)
30
IF = 16 A
IF = 8 A
IF = 16 A
IF = 8 A
VR = 390 V T
J
= 125 °C
T
J
= 25 °C
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
®
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Note
(1)
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94032 4 [email protected]
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I
F(AV)
(nC)
rr
Q
) x R
REV
x VFM at (I
Fig. 9 - Typical Reverse Recovery Time vs. dI
300
VR = 390 V
= 125 °C
T
250
200
150
100
J
= 25 °C
T
J
IF = 16 A
IF = 16 A
50
0
100 1000
IF = 8 A
IF = 8 A
dIF/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dI
;
thJC
/D) (see fig. 8); Pd
F(AV)
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
, [email protected], [email protected] Revision: 28-Apr-11
This datasheet is subject to change without notice.
Fig. 8 - Forward Power Loss Characteristics
/dt
F
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/dt
F
R
Page 5
VS-8ETX06PbF, VS-8ETX06FPPbF
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dIF/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured from zero crossing point of negative going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
trr x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Hyperfast Rectifier, 8 A FRED Pt
= 200 V
V
R
0.01 Ω
L = 70 μH
D.U.T.
®
Vishay Semiconductors
dIF/dt
adjust
G
D
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
Document Number: 94032 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 [email protected]
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 12 - Reverse Recovery Waveform and Definitions
This datasheet is subject to change without notice.
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Page 6
VS-8ETX06PbF, VS-8ETX06FPPbF
Tube standard pack quantity: 50 pieces
2 - Current rating (8 = 8 A)
4
- T = TO-220, DPAK
5
- X = Hyperfast rectifier
6
- Voltage rating (06 = 600 V)
3 - E = Single diode
1
- Vishay Semiconductors product
Device code
51 32 4 6 7 8
VS- 8 E T X 06 FP PbF
7
-
FP = TO-220 FULL-PAK
None = TO-220AC
8
- PbF = Lead (Pb)-free
Vishay Semiconductors
ORDERING INFORMATION TABLE
Hyperfast Rectifier, 8 A FRED Pt
®
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model www.vishay.com/doc?95393
TO-220AC FULL-PAK www.vishay.com/doc?95005
TO-220AC FULL-PAK www.vishay.com/doc?95009
TO-220AC www.vishay.com/doc?95221
TO-220AC www.vishay.com/doc?95224
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94032 6 [email protected]
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
, [email protected], [email protected] Revision: 28-Apr-11
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 7
www.vishay.com
5° ± 0.5°
3.3
3.1
5° ± 0.5°
0.9
0.7
2.54 TYP.
2.54 TYP.
10.6
10.4
3.7
3.2
7.31
6.91
0.61
0.38
2.85
2.65
2.8
2.6
1.4
1.3
10°
4.8
4.6
16.0
15.8
16.4
15.4
(2 places)
R 0.7 R 0.5
Hole Ø
3.4
3.1
TYP.
1.15
1.05
13.56
13.05
Lead assignments
Diodes 1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220 FULL-PAK
DIMENSIONS in millimeters
Outline Dimensions
Vishay Semiconductors
Revision: 20-Jul-11
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1
Document Number: 95005
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 8
DIMENSIONS in millimeters and inches
(6)
E
(7)
E2
Q
(6)
D
D1
13
L3
L4
2
A
Ø P
0.014 AB
Detail B
L
MM
C
(6)
H1
(7)
TO-220AC
B
Seating
plane
A
A
A1
Outline Dimensions
Vishay Semiconductors
123
D
H1
θ
D
E
Thermal pad
D2 (6)
E1 (6)
2 x b2 2 x b
Lead assignments
Diodes 1 + 2 - Cathode
3 - Anode
CC
Detail B
Lead tip
L1
SYMBOL
e1
MM
0.015 AB
c
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A
A2
NOTES SYMBOL
View A - A
Conforms to JEDEC outline TO-220AC
MILLIMETERS INCHES
NOTES
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2
D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6 90° to 93° 90° to 93°
E 10.11 10.51 0.398 0.414 3, 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
(4)
Dimension b1, b3 and c1 apply to base metal only
(5)
Controlling dimension: inches
(6)
Thermal pad contour optional within dimensions E, H1, D2 and E1
(7)
Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8)
Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 07-Mar-11 [email protected]
Page 9
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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1
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