Datasheet VS-8ETL06SPbF, VS-8ETL06-1PbF DataSheet (Vishay)

Page 1
V
VS-8ETL06SPbF, VS-8ETL06-1PbF
Vishay High Power Products
Ultralow VF Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
S-8ETL06SPbF
Base
cathode
2
1
N/C
D2PAK
3
Anode
PRODUCT SUMMARY
VF (typical) 0.96 V
I
F(AV)
V
R
VS-8ETL06-1PbF
2
1
N/C
TO-262
3
Anode
8 A
600 V
FEATURES
• Benchmark ultralow forward voltage drop
• Hyperfast recovery time
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
State of the art, ultralow VF, soft-switching hyperfast rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). The minimized conduction loss, optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. The device is also intended for use as a freewheeling diode in power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units and DVD ac-to-dc power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current I
Peak repetitive forward current I
Operating junction and storage temperatures T
F(AV)
FSM
, T
J
RRM
TC = 160 °C 8
TJ = 25 °C 175
FM
Stg
600 V
ANon-repetitive peak surge current I
16
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94029 For technical questions, contact: diodestech@vishay.com Revision: 11-Mar-10 1
,
V
BR
V
R
IR = 100 μA 600 - -
R
IF = 8 A - 0.96 1.05
F
T
S
= 8 A, TJ = 150 °C - 0.81 0.86
I
F
VR = VR rated - 0.05 5
T
= 150 °C, VR = VR rated - 20 100
J
VR = 600 V - 17 - pF
Measured lead to lead 5 mm from package body - 8.0 - nH
V
μA
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VS-8ETL06SPbF, VS-8ETL06-1PbF
Vishay High Power Products
Ultralow VF Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 60 100
= 8 A, dIF/dt = 100 A/μs, VR = 30 V - 150 250
I
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 250 -
T
J
TJ = 25 °C - 15 -
T
= 125 °C - 20 -
J
= 8 A
I
F
dI
/dt = 200 A/μs
F
V
= 390 V
R
- 170 -
TJ = 25 °C - 1.3 -
T
= 125 °C - 2.6 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range
Thermal resistance, junction to case per leg
Thermal resistance, junction to ambient per leg
Thermal resistance, case to heatsink
Weight
Mounting torque
Marking device
, T
T
J
Stg
R
-1.42
thJC
R
Typical socket mount - - 70
thJA
Mounting surface, flat, smooth and
R
thCS
greased
- 65 - 175 °C
-0.5-
-2.0- g
-0.07- oz.
Case style D
6.0
(5.0)
2
PAK 8ETL06S
-
Case style TO-262 8ETL06-1
12
(10)
kgf · cm
(lbf · in)
ns
A
μC
°C/W
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Document Number: 94029
2 Revision: 11-Mar-10
Page 3
VS-8ETL06SPbF, VS-8ETL06-1PbF
100
10
Current (A)
1
- Instantaneous Forward
F
I
0.1
V
- Forward Voltage Drop (V)
F
Ultralow VF Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
100
10
TJ = 175 °C
= 150 °C
T
J
T
= 25 °C
J
1.20.80.4
1.6
2.0
0.1
- Reverse Current (µA)
0.01
R
I
0.001
Vishay High Power Products
®
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
1
200 400
VR - Reverse Voltage (V)
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
300100
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
(pF)
600500
TJ = 25 °C
Junction Capacitance
-
T
C
10
0 200 400 500 600
V
R
300100
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
P
DM
D = 0.50
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1/t2
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
t
1
thJC
t
2
+ T
C
Document Number: 94029 For technical questions, contact: diodestech@vishay.com
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Revision: 11-Mar-10 3
Page 4
VS-8ETL06SPbF, VS-8ETL06-1PbF
Vishay High Power Products
180
175
170
165
DC
160
Square wave (D = 0.50) Rated V
applied
R
155
Allowable Case Temperature (°C)
Average Power Loss (W)
See note (1)
150
02 6 10 14
I
48
- Average Forward Current (A)
F(AV)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
12
10
8
6
4
2
0
02 6 1012
I
DC
48
- Average Forward Current (A)
F(AV)
RMS limit
D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50
Fig. 6 - Forward Power Loss Characteristics
Ultralow VF Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
450
400
350
300
250
(ns)
rr
200
t
150
100
IF = 16 A
50
= 8 A
I
F
12
0
100 1000
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
5000
IF = 16 A
4500
I
= 8 A
F
4000
3500
3000
(nC)
rr
2500
Q
2000
1500
1000
500
100 1000
Fig. 8 - Typical Stored Charge vs. dI
®
VR = 390 V
= 125 °C
T
J
= 25 °C
T
J
dIF/dt (A/µs)
VR = 390 V
= 125 °C
T
J
T
= 25 °C
J
dIF/dt (A/µs)
/dt
F
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
x VFM at (I
F(AV)
REV
) x R
;
thJC
/D) (see fig. 6);
F(AV)
R
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Document Number: 94029
4 Revision: 11-Mar-10
Page 5
VS-8ETL06SPbF, VS-8ETL06-1PbF
Ultralow VF Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
= 200 V
V
R
0.01 Ω
L = 70 μH
D.U.T.
(3)
a
(2)
D
IRFP250
S
t
rr
t
b
I
RRM
0.75 I
RRM
(4) Q
- area under curve dened by t
rr
and I
RRM
(5) dI current during t
/dt - peak rate of change of
(rec)M
dIF/dt
adjust
G
Fig. 9 - Reverse Recovery Parameter Test Circuit
I
F
0
dIF/dt
(1)
(1) dI
/dt - rate of change of current
F
through zero crossing
- peak reverse recovery current
(2) I
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative going I through 0.75 I extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
t
Vishay High Power Products
®
(4)
Q
rr
0.5 I
RRM
(rec)M
Q
=
rr
(5)
/dt
trr x I
RRM
2
portion of t
b
rr
rr
dI
Document Number: 94029 For technical questions, contact: diodestech@vishay.com
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Revision: 11-Mar-10 5
Page 6
VS-8ETL06SPbF, VS-8ETL06-1PbF
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
VS- 8 E T L 06 S TRL PbF
1 - HPP product suffix
- Current rating (8 A)
2
- E = Single diode
3
4 - T = TO-220, D2PAK
- L = Ultralow V
5
- Voltage rating (06 = 600 V)
6
7
-
S = D2PAK
-1 = TO-262
-
8
9
None = Tube (50 pieces)
TRL = Tape and reel (left oriented, for D
TRR = Tape and reel (right oriented, for D
- PbF = Lead (Pb)-free
Ultralow VF Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
324
F
51
hyperfast recovery
6789
2
PAK package)
2
PAK package)
®
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95014
Part marking information www.vishay.com/doc?95008
Packaging information www.vishay.com/doc?95032
www.vishay.com For technical questions, contact: diodestech@vishay.com 6 Revision: 11-Mar-10
Document Number: 94029
Page 7
D2PAK, TO-262
DIMENSIONS FOR D2PAK in millimeters and inches
Outline Dimensions
Vishay High Power Products
Conforms to JEDEC outline D
(2)(3)
E
(3)
L1
D
L2
2 x
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
4
132
BB
e
2
H
2 x b2
2 x b
0.010
PAK (SMD-220)
A
Detail A
(2)
C
MM
A
Lead tip
B
A
c2
AA
A
c
M
± 0.004
B
Gauge
0° to 8°
plane
L3
B
L
L4
Detail “A”
Rotated 90 °CW
Scale: 8:1
(E)
E1
View A - A
A1
(3)
(D1)
17.90 (0.70)
15.00 (0.625)
2.32
(0.08)
Plating
Seating
plane
2.64 (0.103)
2.41 (0.096)
(3)
H
B
Pad layout
11.00 MIN.
(0.43)
MIN.
(4)
b1, b3
(c)
(b, b2)
Section B - B and C - C
Scale: None
9.65
(0.38)
3.81
(0.15)
c1
MIN.
MIN.
Base Metal
(4)
SYMBOL
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall not
(7)
Outline conforms to JEDEC outline TO-263AB
exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Datum A and B to be determined at datum plane H
(6)
Controlling dimension: inch
Document Number: 95014 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 31-Mar-09 For technical questions concerning module products, contact: ind-modules@vishay.com
NOTES
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1
Page 8
Outline Dimensions
Vishay High Power Products
D2PAK, TO-262
DIMENSIONS FOR TO-262 in millimeters and inches
Modified JEDEC outline TO-262
(Datum A)
(3)
L1
D
(2) (3)
E
1
L2
B
B
2 x e
MM
0.010 A B
Lead tip
A
2
3
C
C
L
(2)
3 x b2
3 x b
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
c
A
c2
A1
B
A
Seating
plane
A
E
E1
Section A - A
Plating
(4)
b1, b3
c
(b, b2)
Section B - B and C - C
Scale: None
(3)
Base metal
c1
(4)
(3)D1
SYMBOL
MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190
A1 2.03 3.02 0.080 0.119
b 0.51 0.99 0.020 0.039
b1 0.51 0.89 0.020 0.035 4
b2 1.14 1.78 0.045 0.070
b3 1.14 1.73 0.045 0.068 4
c 0.38 0.74 0.015 0.029
c1 0.38 0.58 0.015 0.023 4
c2 1.14 1.65 0.045 0.065
D 8.51 9.65 0.335 0.380 2
D1 6.86 8.00 0.270 0.315 3
E 9.65 10.67 0.380 0.420 2, 3
E1 7.90 8.80 0.311 0.346 3
e 2.54 BSC 0.100 BSC
L 13.46 14.10 0.530 0.555
L1 - 1.65 - 0.065 3
L2 3.56 3.71 0.140 0.146
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Controlling dimension: inches
(6)
Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline
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NOTES
Document Number: 95014
Revision: 31-Mar-09
Page 9
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Vishay

Disclaimer

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