Datasheet VS-8ETL06PbF, VS-8ETL06FPPbF DataSheet (Vishay)

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Ultralow VF Hyperfast Rectifier for

TO-220AC TO-220 FULL-PAK

Anode

Cathode

Base

cathode

Anode

Cathode

VS-8ETL06PbF VS-8ETL06FPPbF

Discontinuous Mode PFC, 8 A FRED Pt

PRODUCT SUMMARY

Package TO-220AC, TO-220FP

F(AV)

at I

typ. 60 ns

max. 175 °C

Diode variation Single die

8 A

600 V

1.05 V

VS-8ETL06PbF, VS-8ETL06FPPbF

Vishay Semiconductors

FEATURES

• Hyperfast recovery time

• Benchmark ultralow forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Fully isolated package (V

• UL E78996 pending

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

State of the art, ultralow VF, soft-switching hyperfast rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC).

The minimized conduction loss, optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

The device is also intended for use as a freewheeling diode in power supplies and other power switching applications.

APPLICATIONS

AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units and DVD AC/DC power supplies.

= 2500 V

INS

RMS

)

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Repetitive peak reverse voltage V

Average rectified forward current I

Non-repetitive peak surge current I

Repetitive peak forward current I

Operating junction and storage temperatures T

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage, blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

Document Number: 94028 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 [email protected]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

RRM

FULL-PAK T

IR = 100 μA 600 - -

IF = 8 A - 0.96 1.05

= 8 A, TJ = 150 °C - 0.81 0.86

VR = VR rated - 0.05 5

= 150 °C, VR = VR rated - 20 100

VR = 600 V - 17 - pF

Measured lead to lead 5 mm from package body - 8.0 - nH

F(AV)

FSM

, T

This datasheet is subject to change without notice.

600 V

TC = 160 °C

= 142 °C

TJ = 25 °C 175

Stg

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- 65 to 175 °C

μA

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VS-8ETL06PbF, VS-8ETL06FPPbF

TJ = 175 °C T

= 150 °C

= 25 °C

0.4

0.8

VF - Forward Voltage Drop (V)

- Instantaneous Forward Current (A)

100

1.2 1.6

2.0

0.1

Vishay Semiconductors

Ultralow VF Hyperfast Rectifier for

Discontinuous Mode PFC, 8 A FRED Pt

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 60 100

= 8 A, dIF/dt = 100 A/μs, VR = 30 V - 150 250

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

RRM

= 25 °C

= 125 °C - 250 -

TJ = 25 °C - 15 -

= 125 °C - 20 -

= 8 A

/dt = 200 A/μs

= 390 V

- 170 -

TJ = 25 °C - 1.3 -

= 125 °C - 2.6 -

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range

Thermal resistance, junction to case

Thermal resistance, junction to ambient per leg

Thermal resistance, case to heatsink

Weight

Mounting torque

Marking device

(FULL-PAK) - 3.4 4.3

, T

Stg

thJC

thJA

thCS

Typical socket mount - - 70

Mounting surface, flat, smooth and greased

- 65 - 175 °C

-1.42

-0.5-

-2.0- g

-0.07- oz.

6.0

(5.0)

(10)

kgf · cm

(lbf · in)

Case style TO-220AC 8ETL06

Case style TO-220 FULL-PAK 8ETL06FP

μC

°C/W

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100

0.1

- Reverse Current (µA)

0.01

0.001 100 200 400

TJ = 175 °C

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

300

VR - Reverse Voltage (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

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This datasheet is subject to change without notice.

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600500

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VS-8ETL06PbF, VS-8ETL06FPPbF

100

0 200 400 500 600

VR - Reverse Voltage (V)

- Junction Capacitance (pF)

300100

TJ = 25 °C

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

thJC

- Thermal Impedance (°C/W)

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

Single pulse

(thermal resistance)

D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

thJC

- Thermal Impedance (°C/W)

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

Single pulse

(thermal resistance)

10 100

D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01

Ultralow VF Hyperfast Rectifier for

Discontinuous Mode PFC, 8 A FRED Pt

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Vishay Semiconductors

Fig. 4 - Maximum Thermal Impedance Z

Document Number: 94028 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 [email protected]

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Fig. 5 - Maximum Thermal Impedance Z

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thJC

Characteristics (FULL-PAK)

thJC

Characteristics

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VS-8ETL06PbF, VS-8ETL06FPPbF

02 6 10 14

Allowable Case Temperature (°C)

F(AV)

- Average Forward Current (A)

150

160

165

170

175

180

155

Square wave (D = 0.50) Rated V

applied

See note (1)

02 6 10 14

Allowable Case Temperature (°C)

F(AV)

- Average Forward Current (A)

100

120

140

160

180

Square wave (D = 0.50) Rated V

applied

See note (1)

100 1000

(nC)

dIF/dt (A/µs)

5000

500

IF = 16 A I

= 8 A

3500

2500

1500

1000

VR = 390 V T

= 125 °C

= 25 °C

4500

3000

2000

4000

Vishay Semiconductors

Fig. 6 - Maximum Allowable Case Temperature vs.

Average Forward Current

Fig. 7 - Maximum Allowable Case Temperature vs.

Average Forward Current (FULL-PAK)

Ultralow VF Hyperfast Rectifier for

Discontinuous Mode PFC, 8 A FRED Pt

Average Power Loss (W)

02 6 1012

F(AV)

Fig. 8 - Forward Power Loss Characteristics

450

400

350

300

250

(ns)

200

150

100

IF = 16 A

= 8 A

100 1000

Fig. 9 - Typical Reverse Recovery Time vs. dI

- Average Forward Current (A)

VR = 390 V

= 125 °C

= 25 °C

dIF/dt (A/µs)

RMS limit

D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50

/dt

Note

(1)

Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I

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x VFM at (I

F(AV)

REV

Fig. 10 - Typical Stored Charge vs. dI

) x R

;

thJC

/D) (see fig. 8); Pd

F(AV)

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

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This datasheet is subject to change without notice.

/dt

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VS-8ETL06PbF, VS-8ETL06FPPbF

0.5 I

RRM

(rec)M

/dt

0.75 I

RRM

dIF/dt

(1)

(2)

(3)

(4)

(5)

(1) dI

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

- reverse recovery time measured from zero crossing point of negative going I

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

- area under curve dened by t

and I

RRM

trr x I

RRM

(5) dI

(rec)M

/dt - peak rate of change of

current during t

portion of t

Ultralow VF Hyperfast Rectifier for

Discontinuous Mode PFC, 8 A FRED Pt

= 200 V

0.01 Ω

L = 70 μH

D.U.T.

dIF/dt

adjust

Fig. 11 - Reverse Recovery Parameter Test Circuit

IRFP250

Vishay Semiconductors

Document Number: 94028 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 [email protected]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 12 - Reverse Recovery Waveform and Definitions

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This datasheet is subject to change without notice.

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VS-8ETL06PbF, VS-8ETL06FPPbF

1 - Vishay Semiconductors product

2 - Current rating (8 = 8 A)

3 - E = Single diode

- T = TO-220, D2PAK

5 - L = Ultralow VF hyperfast recovery

6 - Voltage rating (06 = 600 V)

7 - None = TO-220AC

FP = TO-220 FULL-PAK

- PbF = Lead (Pb)-free

Tube standard pack quantity: 50 pieces

Device code

51 32 4 6 7 8

VS- 8 E T L 06 FP PbF

Vishay Semiconductors

Discontinuous Mode PFC, 8 A FRED Pt

ORDERING INFORMATION TABLE

Ultralow VF Hyperfast Rectifier for

LINKS TO RELATED DOCUMENTS

Dimensions

Part marking information

TO-220AC FULL-PAK www.vishay.com/doc?95005

TO-220AC FULL-PAK www.vishay.com/doc?95009

TO-220AC www.vishay.com/doc?95221

TO-220AC www.vishay.com/doc?95224

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THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

, [email protected], [email protected] Revision: 28-Apr-11

This datasheet is subject to change without notice.

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Page 7

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5° ± 0.5°

3.3

3.1

5° ± 0.5°

0.9

0.7

2.54 TYP.

10.6

10.4

3.7

3.2

7.31

6.91

0.61

0.38

2.85

2.65

2.8

2.6

1.4

1.3

10°

4.8

4.6

16.0

15.8

16.4

15.4

(2 places)

R 0.7 R 0.5

Hole Ø

3.4

3.1

TYP.

1.15

1.05

13.56

13.05

Lead assignments

Diodes 1 + 2 - Cathode

3 - Anode

Conforms to JEDEC outline TO-220 FULL-PAK

DIMENSIONS in millimeters

Outline Dimensions

Vishay Semiconductors

Revision: 20-Jul-11

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Document Number: 95005

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DIMENSIONS in millimeters and inches

(6)

(7)

(6)

Ø P

0.014 AB

Detail B

(6)

(7)

TO-220AC

Seating

plane

Outline Dimensions

Vishay Semiconductors

123

Thermal pad

D2 (6)

E1 (6)

2 x b2 2 x b

Lead assignments

Diodes 1 + 2 - Cathode

3 - Anode

Detail B

Lead tip

SYMBOL

0.015 AB

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

View A - A

Conforms to JEDEC outline TO-220AC

MILLIMETERS INCHES

NOTES

A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6

A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7

A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105

b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208

b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7

b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552

b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2

c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084

c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2

D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147

D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118

D2 11.68 12.88 0.460 0.507 6  90° to 93° 90° to 93°

E 10.11 10.51 0.398 0.414 3, 6

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body

(4)

Dimension b1, b3 and c1 apply to base metal only

(5)

Controlling dimension: inches

(6)

Thermal pad contour optional within dimensions E, H1, D2 and E1

(7)

Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed

(8)

Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline

Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 07-Mar-11 [email protected]

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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

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