Datasheet VS-8ETH03PbF DataSheet (Vishay)

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VS-8ETH03PbF

TO-220AC

Vishay Semiconductors

Hyperfast Rectifier, 8 A FRED Pt

PRODUCT SUMMARY

Package TO-220AC

F(AV)

at I

typ. See Recovery table

max. 175 °C

Diode variation Single die

cathode

Cathode

300 V

1.25 V

Base

8 A

Anode

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

300 V series are the state of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time.

The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives.

Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Repetitive peak reverse voltage V

Average rectified forward current I

Non-repetitive peak surge current I

Operating junction and storage temperatures T

F(AV)

FSM

, T

RRM

TC = 155 °C 8

TC = 25 °C 100

Stg

300 V

- 65 to 175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage, blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

IR = 100 μA 300 - -

IF = 8 A - 1.0 1.25

= 8 A, TJ = 125 °C - 0.83 1.00

VR = VR rated - 0.02 20

= 125 °C, VR = VR rated - 6.0 200

VR = 300 V - 31 - pF

Measured lead to lead 5 mm from package body - 8 - nH

μA

Document Number: 94024 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 [email protected]

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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Page 2

VS-8ETH03PbF

Vishay Semiconductors

Hyperfast Rectifier, 8 A FRED Pt

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1 A, dIF/dt = - 50 A/μs, VR = 30 V - - 35

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

RRM

= 25 °C

= 125 °C - 40 -

TJ = 25 °C - 2.2 -

= 125 °C - 5.3 -

= 8 A

/dt = - 200 A/μs

= 200 V

TJ = 25 °C - 30 -

= 125 °C - 106 -

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range

Thermal resistance, junction to case per leg

Thermal resistance, junction to ambient per leg

Thermal resistance, case to heatsink

Weight

Mounting torque

Marking device Case style TO-220AC 8ETH03

, T

Stg

- 1.45 2.5

thJC

thJA

thCS

Typical socket mount - - 70

Mounting surface, flat, smooth and greased

-27-

- 65 - 175 °C

-0.2-

-2.0- g

-0.07- oz.

6.0

(5.0)

(10)

kgf · cm

(lbf · in)

nsT

°C/W

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94024 2 [email protected]

, [email protected], [email protected] Revision: 28-Apr-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Page 3

Hyperfast Rectifier, 8 A FRED Pt

TJ = 175 °C T

= 125 °C

= 25 °C

0.4 1.81.0

0.8

1.4

VF - Forward Voltage Drop (V)

- Instantaneous Forward Current (A)

100

0.6 1.2 1.6

2.0

0.01

0.1

100

0 100 200

VR - Reverse Voltage (V)

- Reverse Current (µA)

150

TJ = 175 °C

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 25 °C

0.001

1000

300250

100

1000

0 100 200 250 300

VR - Reverse Voltage (V)

- Junction Capacitance (pF)

15050

TJ = 25 °C

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

thJC

- Thermal Impedance (°C/W)

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01

Single pulse

(thermal resistance)

VS-8ETH03PbF

Vishay Semiconductors

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Document Number: 94024 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 [email protected]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 4 - Maximum Thermal Impedance Z

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This datasheet is subject to change without notice.

thJC

Characteristics

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VS-8ETH03PbF

0246

Allowable Case Temperature (°C)

F(AV)

- Average Forward Current (A)

160

170

180

See note (1)

150

140

130

8 101214

Square wave (D = 0.50) Rated V

applied

02 6 1012

Average Power Loss (W)

F(AV)

- Average Forward Current (A)

D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50

RMS limit

Vishay Semiconductors

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

Hyperfast Rectifier, 8 A FRED Pt

100

(ns)

100 1000

Fig. 7 - Typical Reverse Recovery Time vs. dI

1000

IF = 8 A , TJ = 125 °C

IF = 8 A , TJ = 25 °C

dIF/dt (A/µs)

/dt

IF = 8 A , TJ = 125 °C

100

(nC)

100 1000

IF = 8 A , TJ = 25 °C

dIF/dt (A/µs)

Fig. 6 - Forward Power Loss Characteristics

Fig. 8 - Typical Stored Charge vs. dI

/dt

Note

(1)

Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

x VFM at (I

F(AV)

REV

) x R

;

thJC

/D) (see fig. 6);

F(AV)

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94024 4 [email protected]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

, [email protected], [email protected] Revision: 28-Apr-11

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

Page 5

Hyperfast Rectifier, 8 A FRED Pt

0.5 I

RRM

(rec)M

/dt

0.75 I

RRM

dIF/dt

(1)

(2)

(3)

(4)

(5)

(1) dI

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

- reverse recovery time measured from zero crossing point of negative going I

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

- area under curve dened by t

and I

RRM

trr x I

RRM

(5) dI

(rec)M

/dt - peak rate of change of

current during t

portion of t

= 200 V

0.01 Ω

L = 70 μH

D.U.T.

VS-8ETH03PbF

Vishay Semiconductors

dIF/dt adjust

IRFP250

Fig. 9 - Reverse Recovery Parameter Test Circuit

Document Number: 94024 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 [email protected]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 10 - Reverse Recovery Waveform and Definitions

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This datasheet is subject to change without notice.

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VS-8ETH03PbF

Vishay Semiconductors

ORDERING INFORMATION TABLE

Hyperfast Rectifier, 8 A FRED Pt

Device code

Dimensions www.vishay.com/doc?95221

Part marking information www.vishay.com/doc?95224

VS- 8 E T H 03 PbF

51 32 4 6 7

1 - Vishay Semiconductors product

- Current rating (8 = 8 A)

- E = Single diode

- Package:

7 - PbF = Lead (Pb)-free

Tube standard pack quantity: 50 pieces

T = TO-220

- H = Hyperfast recovery

- Voltage rating (03 = 300 V)

LINKS TO RELATED DOCUMENTS

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94024 6 [email protected]

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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DIMENSIONS in millimeters and inches

(6)

(7)

(6)

Ø P

0.014 AB

Detail B

(6)

(7)

TO-220AC

Seating

plane

Outline Dimensions

Vishay Semiconductors

123

DL1D

Thermal pad

D2 (6)

E1 (6)

2 x b2 2 x b

Lead assignments

Diodes 1 + 2 - Cathode

3 - Anode

Detail B

Lead tip

SYMBOL

0.015 AB

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

View A - A

Conforms to JEDEC outline TO-220AC

MILLIMETERS INCHES

NOTES

A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6

A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7

A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105

b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208

b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7

b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552

b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2

c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084

c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2

D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147

D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118

D2 11.68 12.88 0.460 0.507 6  90° to 93° 90° to 93°

E 10.11 10.51 0.398 0.414 3, 6

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body

(4)

Dimension b1, b3 and c1 apply to base metal only

(5)

Controlling dimension: inches

(6)

Thermal pad contour optional within dimensions E, H1, D2 and E1

(7)

Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed

(8)

Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline

Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 07-Mar-11 [email protected]

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Disclaimer

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