Datasheet VS-6EWX06FN-M3 Specification

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New Product

2, 4

3 Anode

N/C

VS-6EWX06FN-M3

Vishay Semiconductors

Hyperfast Rectifier, 6 A FRED Pt

D-PAK (TO-252AA)

PRODUCT SUMMARY

Package D-PAK (TO-252AA)

F(AV)

at I

(typ.) 14 ns

max. 175 °C

Diode variation Single die

6 A

600 V

3.1 V

FEATURES

• Hyperfast recovery time, extremely low Q

• 175 °C maximum operating junction temperature

• For PFC CCM operation

• Low forward voltage drop

• Low leakage current

• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

• Compliant to RoHS Directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21 definition

DESCRIPTION/APPLICATIONS

State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Peak repetitive reverse voltage V

Average rectified forward current I

Peak repetitive forward current I

Operating junction and storage temperatures T

F(AV)

FSM

, T

RRM

TC = 136 °C 6

TJ = 25 °C 50

TC = 136 °C, f = 20 kHz, d = 50 % 12

Stg

600 V

ANon-repetitive peak surge current I

- 65 to 175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage, blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

IR = 100 μA 600 - -

IF = 6 A - 2.50 3.1

= 6 A, TJ = 150 °C - 1.65 1.9

VR = VR rated - - 20

= 150 °C, VR = VR rated - - 250

VR = 600 V - 3.5 - pF

Measured lead to lead 5 mm from package body - 8 - nH

μA

Document Number: 93249 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 31-Mar-11 [email protected]

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

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Page 2

New Product

VS-6EWX06FN-M3

Vishay Semiconductors

Hyperfast Rectifier, 6 A FRED Pt

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 14 21

= 1 A, dIF/dt = 50 A/μs, VR = 30 V - 16 -

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

RRM

= 25 °C

= 125 °C - 27 -

TJ = 25 °C - 3.0 -

= 125 °C - 4.0 -

= 6 A

/dt = 200 A/μs

= 390 V

TJ = 25 °C - 28 -

= 125 °C - 57 -

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range

Thermal resistance, junction to case per leg

Approximate weight

Marking device Case style D-PAK (TO-252AA) 6EWX06FN

, T

Stg

--3°C/W

thJC

-19-

- 65 - 175 °C

0.3 g

0.01 oz.

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93249 2 [email protected]

, [email protected], [email protected] Revision: 31-Mar-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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Page 3

New Product

- Instantaneous Forward Current (A)

VF - Forward Voltage Drop (V)

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0.1

100

93249_01

TJ = 175 °C

TJ = 125 °C

TJ = 25 °C

- Reverse Current (μA)

VR - Reverse Voltage (V)

0 100 200 300 500400 600

0.001

0.01

0.1

100

1000

93249_02

TJ = 125 °C

TJ = 175 °C

TJ = 150 °C

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

- Junction Capacitance (pF)

VR - Reverse Voltage (V)

0 100 200 400 500300 600

100

93249_03

0.1

0.00001

93249_04

0.0001 0.001 0.01 0.1

t1 - Rectangular Pulse Duration (s)

thJC

- Thermal Impedance (°C/W)

Single pulse

(thermal resistance)

D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01

Hyperfast Rectifier, 6 A FRED Pt

VS-6EWX06FN-M3

Vishay Semiconductors

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Document Number: 93249 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 31-Mar-11 [email protected]

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 4 - Maximum Thermal Impedance Z

This document is subject to change without notice.

Characteristics

thJC

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VS-6EWX06FN-M3

Allowable Case Temperature (°C)

F(AV)

- Average Forward Current (A)

8642

150

170

180

110

130

140

160

120

93249_05

Square wave (D = 0.50) Rated V

applied

See note (1)

Average Power Loss (W)

F(AV)

- Average Forward Current (A)

93249_06

D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC

RMS limit

(ns)

dIF/dt (A/μs)

100

93249_07

1000

IF = 6 A, TJ = 25 °C

IF = 6 A, TJ = 125 °C

(nC)

dIF/dt (A/μs)

100

93249_08

1000

140

100

120

IF = 6 A, TJ = 25 °C

IF = 6 A, TJ = 125 °C

Vishay Semiconductors

New Product

Hyperfast Rectifier, 6 A FRED Pt

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

Fig. 6 - Forward Power Loss Characteristics

Note

(1)

Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

x VFM at (I

F(AV)

REV

) x R

;

thJC

/D) (see fig. 6);

F(AV)

Fig. 7 - Typical Reverse Recovery Time vs. dI

Fig. 8 - Typical Stored Charge vs. dI

/dt

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93249 4 [email protected]

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

, [email protected], [email protected] Revision: 31-Mar-11

This document is subject to change without notice.

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Page 5

New Product

0.5 I

RRM

(rec)M

/dt

0.75 I

RRM

dIF/dt

(1)

(2)

(3)

(4)

(5)

(1) dI

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

- reverse recovery time measured from zero crossing point of negative going I

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

- area under curve dened by t

and I

RRM

trr x I

RRM

(5) dI

(rec)M

/dt - peak rate of change of

current during t

portion of t

Hyperfast Rectifier, 6 A FRED Pt

= 200 V

0.01 Ω

L = 70 μH

D.U.T.

VS-6EWX06FN-M3

Vishay Semiconductors

dIF/dt adjust

IRFP250

Fig. 9 - Reverse Recovery Parameter Test Circuit

Document Number: 93249 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 31-Mar-11 [email protected]

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 10 - Reverse Recovery Waveform and Definitions

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VS-6EWX06FN-M3

Vishay Semiconductors

ORDERING INFORMATION TABLE

Hyperfast Rectifier, 6 A FRED Pt

New Product

Device code

VS- 6 E W X 06 FN TRL -M3

51 32 4 6 7 8 9

1 - Vishay Semiconductors product

2 - Current rating (6 = 6 A)

3 - Circuit configuration:

E = Single diode

- Package identifier:

W = D-PAK

- X = Hyperfast recovery time

- Voltage rating (06 = 600 V)

- FN = TO-252AA

None = Tube

TR = Tape and reel

TRL = Tape and reel (left oriented)

TRR = Tape and reel (right oriented)

- Environmental digit:

-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION

VS-6EWX06FN-M3 75 3000 Antistatic plastic tube

VS-6EWX06FNTR-M3 2000 2000 13" diameter reel

VS-6EWX06FNTRL-M3 3000 3000 13" diameter reel

VS-6EWX06FNTRR-M3 3000 3000 13" diameter reel

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95016

Part marking information www.vishay.com/doc?95176

Packaging information www.vishay.com/doc?95033

SPICE model www.vishay.com/doc?95216

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93249 6 [email protected]

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

, [email protected], [email protected] Revision: 31-Mar-11

www.vishay.com/doc?91000

Page 7

D-PAK (TO-252AA)

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay High Power Products

Ø 2

(2) L5

SYMBOL

(5)

(3)

L3 (3)

D (5)

0.010

Lead tip

0.010

CAB

Detail “C”

Ø 1

Detail “C”

Rotated 90 °CW

Scale: 20:1

Gauge

plane

2 x

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

Seating plane

(L1)

3241

NOTES SYMBOL

0.488 (12.40)

0.409 (10.40)

0.06

(1.524)

0.093 (2.38)

0.085 (2.18)

(7)

Seating

plane

MILLIMETERS INCHES

MIN.

Pad layout

0.265 MIN.

(6.74)

0.245 (6.23)

0.089 (2.28)

NOTES

A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC

A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410

b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070

b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.

b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC

c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3

c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040

D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2

D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10°

E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15°

E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension uncontrolled in L5

(3)

Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad

(4)

Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip

(5)

Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body

(6)

Dimension b1 and c1 applied to base metal only

(7)

Datum A and B to be determined at datum plane H

(8)

Outline conforms to JEDEC outline TO-252AA

MIN.

Document Number: 95016 For technical questions concerning discrete products, contact: [email protected] Revision: 04-Nov-08 For technical questions concerning module products, contact: [email protected]

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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

Document Number: 91000