Datasheet VS-6CUT04, VS-6CWT04FN DataSheet (Vishay)

Page 1
High Performance Schottky Generation 5.0, 2 x 3 A
I-PAK (TO-251AA)
D-PAK (TO-252AA)
VS-6CUT04 VS-6CWT04FN
Base
common
cathode
Anode Anode
Common
cathode
4
3
2
1
Base common cathode
Anode Anode
Common
cathode
4
3
2
1
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
at I
F
F
I
max. 3 mA at 125 °C
RM
T
max. 175 °C
J
Diode variation Common cathode
E
AS
D-PAK (TO-252AA),
I-PAK (TO-251AA)
2 x 3 A
45 V
0.54 V
14 mJ
VS-6CUT04, VS-6CWT04FN
Vishay Semiconductors
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Specific for PV cells pybass diode
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
vs. IR trade off for high efficiency
F
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
RRM
V
F
T
J
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS
Maximum DC reverse voltage V
Document Number: 94650 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 04-Jan-11 [email protected]
45 V
3 Apk, TJ = 125 °C (typical, per leg) 0.46 V
Range - 55 to 175 °C
VS-6CUT04
VS-6CWT04FN
R
TJ = 25 °C 45 V
UNITS
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VS-6CUT04, VS-6CWT04FN
Vishay Semiconductors
High Performance Schottky
Generation 5.0, 2 x 3 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
Maximum peak one cycle non-repetitive surge current per leg
Non-repetitive avalanche energy per leg
per leg
per device 6
I
F(AV)
I
FSM
E
50 % duty cycle at TC = 166 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load condition and with rated
10 ms sine or 6 ms rect. pulse 70
TJ = 25 °C, IAS = 1.3 A, L = 16 mH 14 mJ
AS
V
RRM
applied
Limited by frequency of operation and time pulse duration
Repetitive avalanche current per leg I
AR
so that T
< TJ max. IAS at TJ max. as a function of time pulse
J
(see fig. 8)
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
3 A
Forward voltage drop per leg V
FM
(1)
3 A
6 A 0.615 0.680
6 A 0.570 0.640
Reverse leakage current per leg I
Junction capacitance per leg C
Series inductance per leg L
RM
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 240 - pF
T
Measured lead to lead 5 mm from package body 8.0 - nH
S
TJ = 25 °C
(1)
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
= 125 °C - 3 mA
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated VR
R
3
440
I
at
AS
T
max.
J
0.535 0.600
0.485 0.540
-25μA
- 10 000 V/μs
A
A
A
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case per leg
Maximum thermal resistance, junction to case per device
Typical thermal resistance, case to heatsink
Approximate weight
Marking device
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T
, T
J
Stg
R
DC operation
thJC
R
thCS
- 55 to 175 °C
4.7
2.35
0.3
0.3 g
0.01 oz.
Case style I-PAK 6CUT04
Case style D-PAK 6CWT04FN
, [email protected], [email protected] Revision: 04-Jan-11
°C/W
Page 3
Forward Voltage Drop - VFM (V)
Instantaneous Forward Current - I
F
(A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.1
1
10
100
Tj = 25°C
Tj = 125°C
Tj = 175°C
Reverse Current - I
R
(mA)
Reverse Voltage - VR (V)
0 5 10 15 20 25 30 35 40 45
0.0001
0.001
0.01
0.1
1
10
75°C
100°C
50°C
125°C
150°C
175°C
25°C
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance ZthJC (°C/W)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.2
D = 0.25
D = 0.33
D = 0.5
D = 0.75
VS-6CUT04, VS-6CWT04FN
High Performance Schottky
Generation 5.0, 2 x 3 A
Fig. 2 - Typical Values of Reverse Current vs.
1000
Vishay Semiconductors
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Document Number: 94650 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 04-Jan-11 [email protected]
Fig. 4 - Maximum Thermal Impedance Z
(pF)
T
100
Junction Capacitance - C
10
0 5 10 15 20 25 30 35 40 45
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Characteristics
thJC
Reverse Voltage
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VS-6CUT04, VS-6CWT04FN
Average Forward Current - IF
(AV)
(A)
Allowable Case Temperature (°C)
0 1 2 3 4 5
145
150
155
160
165
170
175
180
DC
Square wave (D=0.50) 80% rated Vr applied
see note (1)
Average Forward Current - I
F
(AV)
(A)
Average Power Loss - (Watts)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
0
0.5
1
1.5
2
2.5
d=1/2 d=1/3
DC
RMS Limit
d=1/4
d=1/5
d=3/4
Square Wave Pulse Duration - tp(microsec)
Non-Repetitive Surge Current - IFSM(A)
10 100 1000 10000
10
100
1000
Vishay Semiconductors
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
High Performance Schottky
Generation 5.0, 2 x 3 A
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
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Fig. 7 - Maximum Non-Repetitive Surge Current
) x R
;
thJC
/D) (see fig. 6);
F(AV)
R
x VFM at (I
F(AV)
REV
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Page 5
001011
1
10
100
Tj = 25°C
Tj = 125°C
Tj = 175°C
Rectangular Pulse Duration ( μsec)
Avalanche Energy (mJ)
VS-6CUT04, VS-6CWT04FN
High Performance Schottky
Vishay Semiconductors
Generation 5.0, 2 x 3 A
100
10
Tj = 25°C
1
Avalanche Current (A)
0.1
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
Tj = 125°C
Tj = 175°C
001011
Rectangular Pulse Duration ( μsec)
Document Number: 94650 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 04-Jan-11 [email protected]
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Page 6
VS-6CUT04, VS-6CWT04FN
2 - Current rating (6 A)
1 - Vishay Semiconductors product
5
- T = Trench
6 - Voltage rating (04 = 45 V)
4
- Package:
U = I-PAK
W = D-PAK
3
- Circuit configuration:
C = Common cathode
8
- D-PAK, I-PAK:
None = Tube (75 pieces)
D-PAK only:
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
7
- TO-252AA (D-PAK)
Device code
51 32 4 6 7 8
VS- 6 C U T 04 FN TRL
Vishay Semiconductors
ORDERING INFORMATION TABLE
High Performance Schottky
Generation 5.0, 2 x 3 A
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95024
Part marking information www.vishay.com/doc?95025
Packaging information www.vishay.com/doc?95033
SPICE model www.vishay.com/doc?95038
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94650 6 [email protected]
, [email protected], [email protected] Revision: 04-Jan-11
Page 7
I-PAK - S, D-PAK
E
D
L5
L4
ee
A
c2
L
c
H
D1
123
4
b
b3
b2
b3 E1
DIMENSIONS FOR I-PAK - S in millimeters
Outline Dimensions
Vishay Semiconductors
SYMBOL
E 6.40 6.60 6.70
L 3.98 4.13 4.28
L4 0.66 0.76 0.86
L5 1.96 2.16 2.36
D 6.00 6.10 6.20
H 11.05 11.25 11.45
b 0.64 0.76 0.88
b2 0.77 0.84 1.14
b3 5.21 5.34 5.46
b4 0.41 0.51 0.61
e 2.286 BSC
A 2.20 2.30 2.38
c 0.40 0.50 0.60
c2 0.40 0.50 0.60
D1 5.30 - -
E1 4.40 - -
DIMENSIONAL REQUIREMENTS
MIN. NOM. MAX.
Document Number: 95024 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 05-Jan-11 [email protected]
Page 8
Outline Dimensions
Vishay Semiconductors
I-PAK - S, D-PAK
DIMENSIONS FOR D-PAK in millimeters and inches
(5)
(2) L5
Ø 2
(3)
3
A
L3 (3)
D (5)
b
0.010
Lead tip
0.010
B
L4
M
M
CAB
Detail “C”
CAB
Rotated 90 °CW
Ø 1
Detail “C”
Scale: 20:1
Gauge
plane
L2
E
b3
4
1
2
b2
e
2 x
A
Seating plane
Ø
C
c2
c
C
C
L
A
H
A
(L1)
D1
A1
E1
3241
C
H
(7)
Seating
plane
0.488 (12.40)
0.409 (10.40)
0.06 MIN.
(1.524)
0.093 (2.38)
0.085 (2.18)
Pad layout
0.265 MIN.
(6.74)
0.245 (6.23)
0.089 (2.28)
MIN.
MIN.
SYMBOL
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC
A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410
b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070
b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.
b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC
c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3
c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040
D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2
D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10°
E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15°
E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension uncontrolled in L5
(3)
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4)
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5)
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
(6)
Dimension b1 and c1 applied to base metal only
(7)
Datum A and B to be determined at datum plane H
(8)
Outline conforms to JEDEC outline TO-252AA
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, [email protected], [email protected] Revision: 05-Jan-11
Page 9
Legal Disclaimer Notice
Vishay

Disclaimer

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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1
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