Datasheet VS-60EPU02PbF, VS-60APU02PbF DataSheet (Vishay)

TO-247AC modified

TO-247AC

2

1

3

Cathode

Anode

Base

common

cathode

2

Anode

1

Anode

3

Base

common

cathode

VS-60EPU02PbF VS-60APU02PbF

VS-60EPU02PbF, VS-60APU02PbF

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 60 A FRED Pt

PRODUCT SUMMARY

Package

I

F(AV)

V

R

at I

V

F

F

t

typ. See Recovery table

rr

T

max. 175 °C

J

Diode variation Single die

TO-247AC modified (2 pins)

TO-247AC,

60 A

200 V

1.08 V

®

FEATURES

• Ultrafast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Output rectification

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION/APPLICATIONS

These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Continuous forward current I

Maximum repetitive forward current I

Operating junction and storage temperatures T

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

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Revision: 17-Feb-11 [e-mail]

R

F(AV)

FSM

FRM

, T

J

Stg

V

,

BR

V

R

S

IR = 100 μA 200 - -

R

IF = 60 A - 0.98 1.08

F

T

= 60 A, TJ = 175 °C - 0.81 0.88

I

F

VR = VR rated - - 50 μA

T

= 150 °C, VR = VR rated - - 2 mA

J

VR = 200 V - 87 - pF

Measured lead to lead 5 mm from package body - 8.0 - nH

, [e-mail], [e-mail] 1

TC = 127 °C 60

TC = 25 °C 800

Square wave, 20 kHz 120

200 V

ASingle pulse forward current I

- 55 to 175 °C

V

VS-60EPU02PbF, VS-60APU02PbF

Vishay Semiconductors

Ultrafast Soft Recovery Diode,

60 A FRED Pt

®

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - - 35

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

= 25 °C

J

T

= 125 °C - 50 -

J

TJ = 25 °C - 4 -

T

= 125 °C - 8 -

J

rr

TJ = 25 °C - 59 -

T

= 125 °C - 220 -

J

= 60 A

I

F

dI

/dt = 200 A/μs

F

= 160 V

V

R

-28-

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Thermal resistance,
junction to case

Thermal resistance,
case to heatsink

Weight

Mounting torque --1.2N  m

Marking device

R

- - 0.70

thJC

R

thCS

Mounting surface, flat, smooth
and greased

Case style TO-247AC modified 60EPU02

Case style TO-247AC 60APU02

-0.2-

-5.5- g

-0.2-oz.

nsT

A

nC

K/W

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1

10

1000

0 2.51.5

1

VF - Forward Voltage Drop (V)

I

F

- Instantaneous
Forward Current (A)

100

0.5 2

TJ = 175 °C
T

J

= 150 °C

T

J

= 25 °C

VS-60EPU02PbF, VS-60APU02PbF

Ultrafast Soft Recovery Diode,

60 A FRED Pt

®

1000

100

10

1

0.1

- Reverse Current (µA)

R

0.01

I

0.001
0 100

Vishay Semiconductors

TJ = 175 °C

TJ = 125 °C

TJ = 25 °C

50

200150

VR - Reverse Voltage (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

10 000

1000

TJ = 25 °C

100

- Junction Capacitance (pF)

T

C

10

0 100 1000

10

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

1

0.1

D = 0.50
D = 0.20
D = 0.10

- Thermal Impedance (°C/W)

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1 1

Single pulse

(thermal resistance)

D = 0.05
D = 0.02
D = 0.01

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

P

DM

t

1

t

2

.

1/t2

+ T

thJC

C

.

10

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0204060

Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

140

160

180

See note (1)

120

DC

100

80 100

Square wave (D = 0.50)
80 % rated V

R

applied

170

110

130

150

0 40 60 80 100

Average Power Loss (W)

I

F(AV)

- Average Forward Current (A)

0

40

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

DC

20

20

60

80

100

RMS limit

10

100 1000

t

rr

(ns)

dIF/dt (A/µs)

40

60

30

50

70

0

20

VR = 160 V
T

J

= 125 °C

T

J

= 25 °C

IF = 90 A
I

F

= 60 A

I

F

= 30 A

100 1000

Q

rr

(nC)

dIF/dt (A/µs)

600

400

800

VR = 160 V
T

J

= 125 °C

T

J

= 25 °C

0

200

IF = 30 A
I

F

= 60 A

I

F

= 90 A

700

500

300

100

VS-60EPU02PbF, VS-60APU02PbF

Vishay Semiconductors

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

Ultrafast Soft Recovery Diode,

60 A FRED Pt

®

Fig. 7 - Typical Reverse Recovery Time vs. dI

/dt

F

Fig. 6 - Forward Power Loss Characteristics

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V

REV

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REV

x VFM at (I

F(AV)

) x R

;

thJC

/D) (see fig. 6);

F(AV)

Fig. 8 - Typical Stored Charge vs. dI

R

/dt

F

, [e-mail], [e-mail] Revision: 17-Feb-11

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

VS-60EPU02PbF, VS-60APU02PbF

Ultrafast Soft Recovery Diode,

60 A FRED Pt

V

R

L = 70 μH

dIF/dt

adjust

Fig. 9 - Reverse Recovery Parameter Test Circuit

G

®

= 200 V

0.01 Ω

D.U.T.

D

IRFP250

S

Vishay Semiconductors

Document Number: 94021 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 17-Feb-11 [e-mail]

Fig. 10 - Reverse Recovery Waveform and Definitions

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2

- Current rating (60 = 60 A)

4

- Package:

P = TO-247AC (modified)

5

- Type of silicon:

U = Ultrafast recovery

6

- Voltage rating (02 = 200 V)

3

- Circuit configuration:

E = Single diode

A = Single diode, 3 pins

Device code

51 32 4 6 7

VS- 60 E P U 02 PbF

1 - Vishay Semiconductors product

7 - PbF = Lead (Pb)-free

Tube standard pack quantity: 25 pieces

VS-60EPU02PbF, VS-60APU02PbF

Vishay Semiconductors

ORDERING INFORMATION TABLE

Ultrafast Soft Recovery Diode,

60 A FRED Pt

®

LINKS TO RELATED DOCUMENTS

Dimensions

Part marking information

SPICE model www.vishay.com/doc?95416

TO-247AC modified www.vishay.com/doc?95253

TO-247AC www.vishay.com/doc?95223

TO-247AC modified www.vishay.com/doc?95255

TO-247AC www.vishay.com/doc?95226

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www.vishay.com

0.10 AC

M M

E

N

(2)

(3)

(4)

(4)

(2) R/2

B

2 x R

S

D

See view B

2 x e

b4

3 x b

2 x b2

L

C

(5) L1

1

2

3

Q

D

A

A2

A

A

A1

C

Ø K BD

M M

A

(6)

Ø P

(Datum B)

FP1

D1 (4)

4

E1

0.01 BD

M M

View A - A

Thermal pad

D2

DDE E

C

C

View B

(b1, b3, b5)

Base metal

c1

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting

Lead assignments

Diodes

1. - Anode/open

2. - Cathode

3. - Anode

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay Semiconductors

SYMBOL

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC

b1 0.99 1.35 0.039 0.053 FK 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144

c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275

c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216

D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5M-1994

(2)

(3)

(4)

(5)

(6)

(7)

Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at

the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c

Revision: 16-Jun-11

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

1

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 95223

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DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay Semiconductors

(2) R/2

2 x R

(5) L1

0.10 AC

Planting

B

Q

(2)

C

2 x b2

3 x b

M M

(c)

Section C - C, D - D, E - E

E

1

2

b4

(b1, b3, b5)

(b, b2, b4)

(3)

N

3

(4)

2 x e

S

D

L

Base metal

c1

See view B

A

A2

A

D

A

C

A1

DDE E

View B

A

(6)

ΦP

M M

Ø K BD

D2

Thermal pad

Lead assignments

Diodes

1. - Anode/open

C

C

2. - Cathode

3. - Anode

(Datum B)

ΦP1

D1 (4)

4

(4)

E1

View A - A

SYMBOL

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC

b1 0.99 1.35 0.039 0.053 K 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144

c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275

c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC

Notes

(1)

Dimensioning and tolerance per ASME Y14.5M-1994

(2)

Contour of slot optional

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(4)

Thermal pad contour optional with dimensions D1 and E1

(5)

Lead finish uncontrolled in L1

(6)

P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")

(7)

Outline conforms to JEDEC outline TO-247 with exception of dimension c

Revision: 21-Jun-11

For technical questions within your region: [e-mail]

1

, [e-mail], [e-mail]

Document Number: 95253

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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