Datasheet VS-40CTQ150SPbF, VS-40CTQ150-1PbF DataSheet (Vishay)

Page 1
D2PAK TO-262
V
S-40CTQ150SPbFVS-40CTQ150-1PbF
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Schottky Rectifier, 2 x 20 A
• AEC-Q101 qualified
• Very low forward voltage drop
• Halogen-free according to IEC 61249-2-21 definition
• 175 °C T
• Center tap TO-220 package
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Compliant to RoHS Directive 2002/95/EC
operation
J
Vishay Semiconductors
PRODUCT SUMMARY
Package TO-262AA, TO-263AB (D2PAK)
I
F(AV)
V
R
V
at I
F
F
I
RM
T
max. 175 °C
J
Diode variation Common cathode
E
AS
15 mA at 125 °C
2 x 20 A
150 V
0.71 V
1 mJ
DESCRIPTION
The VS-40CTQ... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 40 A
150 V
tp = 5 μs sine 1500 A
20 Apk, TJ = 125 °C (per leg) 0.71 V
- 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
VS-40CTQ150SPbF
VS-40CTQ150-1PbF
150 V
UNITS
Document Number: 94215 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 04-Jan-11 DiodesAmericas@vishay.com
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Page 2
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
per leg
forward current See fig. 5
per device 40
Maximum peak one cycle non-repetitive surge current per leg See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 140 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load condition and with rated
10 ms sine or 6 ms rect. pulse 250
TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH 1.0 mJ
AS
V
RRM
applied
Current decaying linearly to zero in 1 μs Frequency limited by T
maximum VA = 1.5 x VR typical
J
20
1500
1.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
20 A
Maximum forward voltage drop per leg See fig. 1
V
FM
40 A 1.16
(1)
20 A
40 A 0.85
Maximum reverse leakage current per leg See fig. 2
I
RM
Maximum junction capacitance per leg C
Typical series inductance per leg L
TJ = 25 °C
(1)
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 450 pF
T
Measured lead to lead 5 mm from package body 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
= 125 °C 15 mA
R
R
R
0.93
0.71
50 μA
10 000 V/μs
A
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case per leg
Maximum thermal resistance, junction to case per package
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
minimum
maximum 12 (10)
Marking device
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, T
T
J
Stg
DC operation See fig. 4
R
thJC
DC operation 0.75
R
thCS
Mounting surface, smooth and greased 0.5
- 55 to 175 °C
1.5
°C/W
2g
0.07 oz.
Non-lubricated threads
2
Case style D
PAK 40CTQ150S
6 (5)
kgf cm
(lbf in)
Case style TO-262 40CTQ150-1
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Page 3
1
10
100
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.4 0.8 1.2 1.60
TJ = 175 °C T
J
= 125 °C
T
J
= 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
40 80
160
120
0
TJ = 25 °C
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Schottky Rectifier, 2 x 20 A
1000
100
10
1
0.1
- Reverse Current (mA)
R
0.01
I
0.001
0
Vishay Semiconductors
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
4020 60 80
V
- Reverse Voltage (V)
R
100 120 140
160
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10
1
0.1
- Thermal Impedance (°C/W)
Document Number: 94215 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 04-Jan-11 DiodesAmericas@vishay.com
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
D = 0.75
Single pulse
(thermal resistance)
D = 0.50 D = 0.33 D = 0.25 D = 0.20
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
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P
DM
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1/t2
t
1
thJC
t
2
+ T
C
100 10
Page 4
100
120
140
160
180
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
1051520
3025
0
DC
Square wave (D = 0.50) 80 % V
R
applied
See note (1)
100
10 000
1000
I
FSM
- Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000
10 000
10
At any rated load condition and with rated V
RRM
applied
following surge
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Vishay Semiconductors
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Schottky Rectifier, 2 x 20 A
25
20
15
10
5
Average Power Loss (W)
0
0
Fig. 6 - Forward Power Loss Characteristics
RMS limit
1051520
I
- Average Forward Current (A)
F(AV)
DC
DC = 0.20 DC = 0.25 DC = 0.33 DC = 0.50 DC = 0.75
3025
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % VR applied
REV
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x VFM at (I
F(AV)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
) x R
REV
;
thJC
/D) (see fig. 6);
F(AV)
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Page 5
2 - Current rating (40 A)
4 - T = TO-220
5 - Schottky “Q” series
6 - Voltage rating (150 = 150 V)
7 - S = D2PAK
-1 = TO-262
8 - None = Tube (50 pieces)
TRL = Tape and reel (left oriented - for D2PAK only)
TRR = Tape and reel (right oriented - for D2PAK only)
- PbF = Lead (Pb)-free
9
1 - Vishay Semiconductors product
Device code
51 32 4 6 7 8 9
VS- 40 C T Q 150 S TRL PbF
- Circuit configuration:
C = Common cathode
3
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
ORDERING INFORMATION TABLE
Schottky Rectifier, 2 x 20 A
Vishay Semiconductors
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95014
Part marking information www.vishay.com/doc?95008
Packaging information www.vishay.com/doc?95032
SPICE model www.vishay.com/doc?95434
Document Number: 94215 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 04-Jan-11 DiodesAmericas@vishay.com
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Page 6
D2PAK, TO-262
DIMENSIONS FOR D2PAK in millimeters and inches
Outline Dimensions
Vishay High Power Products
Conforms to JEDEC outline D
(2)(3)
E
(3)
L1
D
L2
2 x
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
4
132
BB
e
2
H
2 x b2
2 x b
0.010
PAK (SMD-220)
A
Detail A
(2)
C
MM
A
Lead tip
B
A
c2
AA
A
c
M
± 0.004
B
0° to 8°
Gauge
plane
L3
B
L
L4
Detail “A”
Rotated 90 °CW
Scale: 8:1
(E)
E1
View A - A
A1
(3)
(D1)
17.90 (0.70)
15.00 (0.625)
2.32
(0.08)
Plating
Seating
plane
2.64 (0.103)
2.41 (0.096)
(3)
H
B
Pad layout
11.00 MIN.
(0.43)
MIN.
(4)
b1, b3
(c)
(b, b2)
Section B - B and C - C
Scale: None
9.65
(0.38)
3.81
(0.15)
c1
MIN.
MIN.
Base Metal
(4)
SYMBOL
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall not
(7)
Outline conforms to JEDEC outline TO-263AB
exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Datum A and B to be determined at datum plane H
(6)
Controlling dimension: inch
Document Number: 95014 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 31-Mar-09 For technical questions concerning module products, contact: ind-modules@vishay.com
NOTES
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1
Page 7
Outline Dimensions
Vishay High Power Products
D2PAK, TO-262
DIMENSIONS FOR TO-262 in millimeters and inches
Modified JEDEC outline TO-262
(Datum A)
(3)
L1
D
(2) (3)
E
1
L2
B
B
2 x e
MM
0.010 A B
Lead tip
A
2
3
C
C
L
(2)
3 x b2
3 x b
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
c
A
A1
c2
B
A
Seating
plane
A
E
E1
Section A - A
Plating
(4)
b1, b3
c
(b, b2)
Section B - B and C - C
Scale: None
(3)
Base metal
c1
(3)D1
(4)
SYMBOL
MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190
A1 2.03 3.02 0.080 0.119
b 0.51 0.99 0.020 0.039
b1 0.51 0.89 0.020 0.035 4
b2 1.14 1.78 0.045 0.070
b3 1.14 1.73 0.045 0.068 4
c 0.38 0.74 0.015 0.029
c1 0.38 0.58 0.015 0.023 4
c2 1.14 1.65 0.045 0.065
D 8.51 9.65 0.335 0.380 2
D1 6.86 8.00 0.270 0.315 3
E 9.65 10.67 0.380 0.420 2, 3
E1 7.90 8.80 0.311 0.346 3
e 2.54 BSC 0.100 BSC
L 13.46 14.10 0.530 0.555
L1 - 1.65 - 0.065 3
L2 3.56 3.71 0.140 0.146
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Controlling dimension: inches
(6)
Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline
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NOTES
Document Number: 95014
Revision: 31-Mar-09
Page 8
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