Datasheet VS-30ETH06PBF Specification

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VS-30ETH06PbF

TO-220AC

Vishay Semiconductors

Hyperfast Rectifier, 30 A FRED Pt

PRODUCT SUMMARY

Package TO-220AC

F(AV)

at I

(typ.) See Recovery table

max. 175 °C

Diode variation Single die

cathode

Cathode

600 V

2.60 V

Base

30 A

Anode

FEATURES

• Reduced Qrr and soft recovery

• 175 °C TJ maximum

• For PFC CRM/CCM operation

• Low forward voltage drop

• Low leakage current

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery.

The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes.

Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Peak repetitive reverse voltage V

Average rectified forward current I

Non-repetitive peak surge current I

Operating junction and storage temperatures T

F(AV)

FSM

, T

RRM

TC = 103 °C 30

TJ = 25 °C 200

Stg

600 V

- 65 to 175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage, blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

IR = 100 μA 600 - -

IF = 30 A - 2.0 2.6

= 30 A, TJ = 150 °C - 1.34 1.75

VR = VR rated - 0.3 50

= 150 °C, VR = VR rated - 60 500

VR = 600 V - 33 - pF

Measured lead to lead 5 mm from package body - 8.0 - nH

μA

Document Number: 94019 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 [email protected]

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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VS-30ETH06PbF

Vishay Semiconductors

Hyperfast Rectifier, 30 A FRED Pt

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 28 35

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

RRM

= 25 °C

= 125 °C - 77 -

TJ = 25 °C - 3.5 -

= 125 °C - 7.7 -

= 30 A

/dt = 200 A/μs

= 200 V

TJ = 25 °C - 65 -

= 125 °C - 345 -

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range

Thermal resistance, junction to case per leg

Thermal resistance, junction to ambient per leg

Thermal resistance, case to heatsink

Weight

Mounting torque

Marking device Case style TO-220AC 30ETH06

, T

Stg

-0.71.1

thJC

Typical socket mount - - 70

Mounting surface, flat, smooth and greased

thJA

thCS

-31-

- 65 - 175 °C

-0.2-

-2.0- g

-0.07- oz.

6.0

(5.0)

(10)

kgf · cm

(lbf · in)

nsT

°C/W

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94019 2 [email protected]

, [email protected], [email protected] Revision: 28-Apr-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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Page 3

Hyperfast Rectifier, 30 A FRED Pt

TJ = 175 °C T

= 150 °C

= 25 °C

1000

0 3.51.5

2.5

VF - Forward Voltage Drop (V)

- Instantaneous Forward Current (A)

100

0.5 2 3

0.01

0.1

100

0 200 400

VR - Reverse Voltage (V)

- Reverse Current (µA)

300

TJ = 175 °C

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 25 °C

100

0.001

1000

600500

0.0001

100

1000

0 200 400 500 600

VR - Reverse Voltage (V)

- Junction Capacitance (pF)

300100

TJ = 25 °C

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

thJC

- Thermal Impedance (°C/W)

Single pulse

(thermal resistance)

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01

0.001

VS-30ETH06PbF

Vishay Semiconductors

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Document Number: 94019 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 [email protected]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 4 - Maximum Thermal Impedance Z

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This datasheet is subject to change without notice.

thJC

Characteristics

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VS-30ETH06PbF

0 5 10 15 20 25

Allowable Case Temperature (°C)

F(AV)

- Average Forward Current (A)

140

160

180

See note (1)

120

100

30 35 40 45

Square wave (D = 0.50) Rated V

applied

0 1020304045

Average Power Loss (W)

F(AV)

- Average Forward Current (A)

D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50

RMS limit

5 152535

Vishay Semiconductors

Hyperfast Rectifier, 30 A FRED Pt

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

(ns)

VR = 200 V

= 125 °C

= 25 °C

100 1000

dIF/dt (A/µs)

Fig. 7 - Typical Reverse Recovery Time vs. dI

1200

VR = 200 V

= 125 °C

800

600

400

= 25 °C

IF = 30 A

= 15 A

(nC)

1000

IF = 30 A

= 15 A

/dt

Note

(1)

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Fig. 6 - Forward Power Loss Characteristics

Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

x VFM at (I

F(AV)

REV

) x R

;

thJC

/D) (see fig. 6);

F(AV)

This datasheet is subject to change without notice.

200

100 1000

dIF/dt (A/µs)

Fig. 8 - Typical Stored Charge vs. dI

/dt

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Page 5

Hyperfast Rectifier, 30 A FRED Pt

0.5 I

RRM

(rec)M

/dt

0.75 I

RRM

dIF/dt

(1)

(2)

(3)

(4)

(5)

(1) dI

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

- reverse recovery time measured from zero crossing point of negative going I

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

- area under curve dened by t

and I

RRM

trr x I

RRM

(5) dI

(rec)M

/dt - peak rate of change of

current during t

portion of t

= 200 V

0.01 Ω

L = 70 μH

D.U.T.

VS-30ETH06PbF

Vishay Semiconductors

dIF/dt adjust

IRFP250

Fig. 9 - Reverse Recovery Parameter Test Circuit

Document Number: 94019 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 [email protected]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 10 - Reverse Recovery Waveform and Definitions

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This datasheet is subject to change without notice.

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VS-30ETH06PbF

Vishay Semiconductors

ORDERING INFORMATION TABLE

Hyperfast Rectifier, 30 A FRED Pt

Device code

Dimensions www.vishay.com/doc?95221

Part marking information www.vishay.com/doc?95224

SPICE model www.vishay.com/doc?95422

VS- 30 E T H 06 PbF

51 32 4 6 7

- Vishay Semiconductors product

2 - Current rating (30 = 30 A)

3 - E = Single diode

4 - Package:

T = TO-220

- H = Hyperfast recovery

- Voltage rating (06 = 600 V)

- PbF = Lead (Pb)-free

Tube standard pack quantity: 50 pieces

LINKS TO RELATED DOCUMENTS

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94019 6 [email protected]

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

, [email protected], [email protected] Revision: 28-Apr-11

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Vishay

Disclaimer

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Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1