Datasheet VS-30ETH06PBF Specification

VS-30ETH06PbF

TO-220AC

Vishay Semiconductors

Hyperfast Rectifier, 30 A FRED Pt

PRODUCT SUMMARY

Package TO-220AC

I

F(AV)

V

R

V

at I

F

F

t

(typ.) See Recovery table

rr

T

max. 175 °C

J

Diode variation Single die

cathode

1

Cathode

600 V

2.60 V

Base

30 A

2

Anode

®

FEATURES

• Reduced Qrr and soft recovery

• 175 °C TJ maximum

• For PFC CRM/CCM operation

• Low forward voltage drop

3

• Low leakage current

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.

The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.

These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.

Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Peak repetitive reverse voltage V

Average rectified forward current I

Non-repetitive peak surge current I

Operating junction and storage temperatures T

F(AV)

FSM

, T

J

RRM

TC = 103 °C 30

TJ = 25 °C 200

Stg

600 V

A

- 65 to 175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

,

V

BR

V

R

IR = 100 μA 600 - -

R

IF = 30 A - 2.0 2.6

F

I

= 30 A, TJ = 150 °C - 1.34 1.75

F

VR = VR rated - 0.3 50

T

= 150 °C, VR = VR rated - 60 500

J

VR = 600 V - 33 - pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

V

μA

Document Number: 94019 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 [e-mail]

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

, [e-mail], [e-mail] 1

www.vishay.com/doc?91000

VS-30ETH06PbF

Vishay Semiconductors

Hyperfast Rectifier, 30 A FRED Pt

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 28 35

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

= 25 °C

J

T

= 125 °C - 77 -

J

TJ = 25 °C - 3.5 -

T

= 125 °C - 7.7 -

J

= 30 A

I

F

dI

/dt = 200 A/μs

F

V

= 200 V

R

TJ = 25 °C - 65 -

T

= 125 °C - 345 -

J

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and
storage temperature range

Thermal resistance,
junction to case per leg

Thermal resistance,
junction to ambient per leg

Thermal resistance,
case to heatsink

Weight

Mounting torque

Marking device Case style TO-220AC 30ETH06

, T

T

J

Stg

R

-0.71.1

thJC

Typical socket mount - - 70

Mounting surface, flat, smooth
and greased

R

R

thJA

thCS

®

-31-

- 65 - 175 °C

-0.2-

-2.0- g

-0.07- oz.

6.0

(5.0)

-

12

(10)

kgf · cm

(lbf · in)

nsT

A

nC

°C/W

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94019
2 [e-mail]

, [e-mail], [e-mail] Revision: 28-Apr-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Hyperfast Rectifier, 30 A FRED Pt

1

10

TJ = 175 °C
T

J

= 150 °C

T

J

= 25 °C

1000

0 3.51.5

1

2.5

VF - Forward Voltage Drop (V)

I

F

- Instantaneous
Forward Current (A)

100

0.5 2 3

0.01

0.1

1

10

100

0 200 400

VR - Reverse Voltage (V)

I

R

- Reverse Current (µA)

300

TJ = 175 °C

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 25 °C

100

0.001

1000

600500

0.0001

100

1000

0 200 400 500 600

10

VR - Reverse Voltage (V)

C

T

- Junction Capacitance (pF)

300100

TJ = 25 °C

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

Single pulse

(thermal resistance)

.

.

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

10

0.001

10

VS-30ETH06PbF

®

Vishay Semiconductors

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Document Number: 94019 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 [e-mail]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 4 - Maximum Thermal Impedance Z

, [e-mail], [e-mail] 3

This datasheet is subject to change without notice.

thJC

Characteristics

www.vishay.com/doc?91000

VS-30ETH06PbF

0 5 10 15 20 25

Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

140

160

180

See note (1)

120

DC

100

80

30 35 40 45

Square wave (D = 0.50)
Rated V

R

applied

0 1020304045

Average Power Loss (W)

I

F(AV)

- Average Forward Current (A)

0

10

30

40

50

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

DC

20

RMS limit

5 152535

60

70

80

90

0

Vishay Semiconductors

Hyperfast Rectifier, 30 A FRED Pt

®

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

90

80

70

60

50

(ns)

rr

40

t

30

20

VR = 200 V

= 125 °C

T

J

10

T

= 25 °C

J

0

100 1000

dIF/dt (A/µs)

Fig. 7 - Typical Reverse Recovery Time vs. dI

1200

VR = 200 V

= 125 °C

T

800

600

400

J

= 25 °C

T

J

IF = 30 A

= 15 A

I

F

(nC)

rr

Q

1000

IF = 30 A

= 15 A

I

F

/dt

F

Note

(1)

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94019
4 [e-mail]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 6 - Forward Power Loss Characteristics

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

x VFM at (I

F(AV)

REV

) x R

;

thJC

/D) (see fig. 6);

F(AV)

This datasheet is subject to change without notice.

200

0

100 1000

dIF/dt (A/µs)

Fig. 8 - Typical Stored Charge vs. dI

R

/dt

F

, [e-mail], [e-mail] Revision: 28-Apr-11

www.vishay.com/doc?91000

Hyperfast Rectifier, 30 A FRED Pt

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

V

= 200 V

R

0.01 Ω

L = 70 μH

D.U.T.

VS-30ETH06PbF

®

Vishay Semiconductors

dIF/dt
adjust

G

D

IRFP250

S

Fig. 9 - Reverse Recovery Parameter Test Circuit

Document Number: 94019 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 [e-mail]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 10 - Reverse Recovery Waveform and Definitions

, [e-mail], [e-mail] 5

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

VS-30ETH06PbF

Vishay Semiconductors

ORDERING INFORMATION TABLE

Hyperfast Rectifier, 30 A FRED Pt

®

Device code

Dimensions www.vishay.com/doc?95221

Part marking information www.vishay.com/doc?95224

SPICE model www.vishay.com/doc?95422

VS- 30 E T H 06 PbF

51 32 4 6 7

- Vishay Semiconductors product

1

2 - Current rating (30 = 30 A)

3 - E = Single diode

4 - Package:

T = TO-220

- H = Hyperfast recovery

5

- Voltage rating (06 = 600 V)

6

7

- PbF = Lead (Pb)-free

Tube standard pack quantity: 50 pieces

LINKS TO RELATED DOCUMENTS

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94019
6 [e-mail]

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

, [e-mail], [e-mail] Revision: 28-Apr-11

www.vishay.com/doc?91000

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1