Page 1
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VS-2N681, VS-2N5205 Series
RMS SCRs, 25 A, 35 A
FEATURES
• General purpose stud mounted
• Broad forward and reverse voltage range through 1200 V
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Vishay Semiconductors
TO-208AA (TO-48)
TYPICAL APPLICATIONS
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
PRODUCT SUMMARY
I
T(AV)
I
T(RMS)
V
DRM/VRRM
V
TM
I
GT
T
J
Package TO-208AA (TO-48)
Diode variation Single SCR
25 V to 1200 V
-40 °C to 125 °C
16 A, 22 A
25 A, 35 A
2.3 V
60 mA
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS 2N681-92 2N5205-07 UNITS
(1)
I
T(AV)
I
T(RMS)
I
TSM
I2t
I
GT
T
C
50 Hz 145 285
60 Hz 150
50 Hz 103 410
60 Hz 94 375
16
-65 to 65
(1)
25 35 A
(1)
40 40 mA
dV/dt - 100
dI/dt 75 to 100 100 A/μs
V
V
T
DRM
RRM
J
Range 25 to 800 600 to 1200 V
Range 25 to 800 600 to 1200 V
-65 to 125
(1)
Note
(1)
JEDEC® registered value
(1)
22
-40 to 40 °C
(1)
300
(1)
-40 to 125
(1)
A
A
A2s
V/μs
°C
Revision: 18-Mar-14
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1
Document Number: 93706
Page 2
VS-2N681, VS-2N5205 Series
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS (APPLIED GATE VOLTAGE ZERO OR NEGATIVE)
TYPE NUMBER
V
RRM/VDRM
REVERSE AND OFF-STATE VOLTAGE
, MAXIMUM REPETITIVE PEAK
V
VS-2N681 25 35
VS-2N682 50 75
VS-2N683 100 150
VS-2N685 200 300
VS-2N687 300 400
VS-2N688 400 500
VS-2N689 500 600
VS-2N690 600 720
VS-2N691 700 840
VS-2N692 800 960
VS-2N5205 800 960
VS-2N5206 1000 1200
VS-2N5207 1200 1440
Note
• JEDEC registered values
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE (t
V
Vishay Semiconductors
< 5 ms)
p
T
J
-65 °C to 125 °C
-40 °C to 125 °C
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS 2N681-92 2N5205-07 UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t capability for fusing
2
t capability for
individual device fusing
Maximum I
2
t capability for
individual device fusing
Maximum peak on-state voltage V
Maximum holding current I
Notes
(1)
JEDEC registered value
(2)I2
t for time tx = I2t · t
x
(1)
I
T(RMS)
I
2
t
I
T(AV)
TSM
I
180° half sine wave conduction
25 35 A
50 Hz half cycle sine wave
or 6 ms rectangular pulse
60 Hz half cycle sine wave
or 5 ms rectangular pulse
50 Hz half cycle sine wave
or 6 ms rectangular pulse
60 Hz half cycle sine wave
or 5 ms rectangular pulse
t = 10 ms Rated V
t = 8.3 ms 94 375
2
t
t = 10 ms
t = 8.3 ms 135 530
t = 0.1 ms to 10 ms, initial TJ < 125 °C
(2)
TM
H
applied following surge = 0
V
RRM
TJ = 25 °C, I
I
= 22 A (70 A peak) 2N5204
T(AV)
= 16 A (50 A peak) 2N681,
T(AV)
Anode supply 24 V, initial IT = 1.0 A
Following any rated
load condition, and
with rated V
RRM
applied
following surge
Same conditions as
above except with
V
applied following
RRM
surge = 0
applied
RRM
following surge,
initial T
= 125 °C
J
V
= 0 following
RRM
surge, initial T
= 125 °C
J
16
-65 to 65
(1)
145 285
(1)
150
170 340
180 355
103 410
145 580
1450 5800 A
(1)
2
20 at 25 °C
(typical)
(1)
22
-40 to 40
(1)
300
(1)
2.3
(1)
at
200
-40 °C
(1)
A
°C
A
A
2
V
mA
2
s
s
Revision: 18-Mar-14
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2
Document Number: 93706
Page 3
VS-2N681, VS-2N5205 Series
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SWITCHING
PARAMETER SYMBOL TEST CONDITIONS 2N681-92 2N5205-07 UNITS
Maximum non-repetitive
rate of rise of turned-on
current
= 25 V to 600 V
V
DM
V
= 700 V to 800 V 75 -
DM
dI/dt
TC = 125 °C, VDM = Rated V
I
= 2 x dI/dt, gate pulse = 20 V,
TM
15 , t
= 6 μs, tr = 0.1 μs maximum
p
Per JEDEC standard RS-397, 5.2.2.6
= 125 °C, VDM = 600 V, ITM = 200 A at
T
C
400 Hz maximum, gate pulse = 20 V, 15 ,
t
= 6 μs, tr = 0.1 μs maximum
p
Per JEDEC standard RS-397, 5.2.2.6
Typical delay time t
TC = 25 °C, VDM = Rated V
DC resistive circuit, gate pulse = 10 V,
d
40 source, t
= 6 μs, tr = 0.1 μs
p
DRM
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS 2N681-92 2N5205-07 UNITS
= 125 °C, exponential
T
J
Minimum critical rate of
rise of off-state voltage
Maximum reverse
leakage current
Note
(1)
JEDEC registered value
V
V
V
V
V
V
V
RRM
RRM
RRM
RRM
RRM
RRM
RRM
dV/dt
, V
= 400 V
DRM
, V
= 500 V 3.5 -
DRM
, V
= 600 V 2.5 3.3
DRM
, V
= 700 V 2.2 -
DRM
, V
= 800 V 2 2.5
DRM
, V
= 1000 V - 2
DRM
, V
= 1200 V - 1.7
DRM
I
DRM
I
RRM
to 100 % rated V
= 125 °C, exponential
T
J
to 67 % rated V
,
TJ = 125 °C
DRM
DRM
Vishay Semiconductors
,
DRM
, ITM = 10 A
Gate open
circuited
100 -
- 100
11μs
100
(typical)
100
250
(typical)
3.5 -
(1)
250
A/μs
V/μs
mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS 2N681-92 2N5205-07 UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current +I
Maximum peak positive gate voltage +V
Maximum peak negative gate voltage -V
Maximum required DC gate
current to trigger
Typical DC gate current to trigger T
tp < 5 ms for 2N681 series;
GM
t
< 500 μs for 2N5204 series
p
G(AV)
GM
GM
GM
TC = min.
rated value
I
GT
T
= 25 °C 40 40
C
= 125 °C 18.5 20
T
C
= 25 °C, + 6 V anode to cathode 30 30
C
Maximum required gate trigger current
is the lowest value which will trigger all
units with + 6 V anode to cathode
Maximum required gate trigger voltage
Maximum required DC gate
voltage to trigger
V
GT
Typical DC gate voltage to trigger T
TC = - 65 °C
T
= 25 °C 2 2
C
= 25 °C, + 6 V anode to cathode 1.5 1.5
C
is the lowest value which will trigger all
units with + 6 V anode to cathode
Maximum gate voltage not to trigger is
Maximum DC gate voltage
not to trigger
V
GD
TC = 125 °C
the maximum value which will not
trigger any unit with rated V
DRM
anode
to cathode
Note
(1)
JEDEC registered value
Revision: 18-Mar-14
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
5
0.5
2
10
5
80
3
0.25
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
60
(1)
0.5
2A
-
(1)
5
(1)
80
(1)
3
(1)
0.25
Document Number: 93706
W
V
mA
V
V
Page 4
VS-2N681, VS-2N5205 Series
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
01234567
1.0
4
10
200
4
10
2
4
10
-1
TJ = 125 °C
T
J
= 25 °C
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS 2N681-92 2N5205-07 UNITS
Operating junction and
storage temperature range
Maximum internal thermal resistance,
junction to case
Typical thermal resistance,
case to sink
to nut
Mounting torque
± 10 %
to device Lubricated threads
Approximate weight
Case style TO-208AA (TO-48)
Note
(1)
JEDEC registered value
T
, T
J
Stg
R
thJC
R
thCS
DC operation 1.5 1.5
Mounting surface, smooth, flat and greased 0.35 0.35
Lubricated threads
(Non-lubricated threads)
Vishay Semiconductors
-65 to 125
(1)
-40 to 125
20 (27.5) lbf · in
0.23 (0.32) kgf · cm
2.3 (3.1) N · m
25 lbf · in
0.29 kgf · cm
2.8 N · m
14 14 g
0.49 0.5 oz.
(1)
(1)
°C
°C/W
180
160
140
120
100
80
60
40
20
0
Average On-State Current Over Full Cycle (A)
Maximum Allowable Case Temperature (°C)
+30°
0 2 4 6 8 10 12 14 16 18 20 22 24
Sinusoidal Current Waveform
+90°
+60°
Fig. 1 - Maximum Allowable Case Temperature
vs. Average On-State Current,
2N681 Series
Ø
Conduction Period
T
= 125 °C
J
+180°
+120°
DC
Fig. 2 - Maximum On-State Voltage vs. Current,
2N681 Series
Revision: 18-Mar-14
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Document Number: 93706
Page 5
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0
0
10
20
50
60
70
30
40
4 8
12 16 20 24 28 32 36
Average Forward Power Loss
Over Full Cycle (W)
Average On-State Current Over Full Cycle (A)
+30°
+60°
+90°
+120°
+180°
DC
Conduction Angle
Ø
TJ = 125 °C
Sinusoidal
Current
Waveform
Controlled
Rectier
Turned
Fully On
I
F
-Average
Forward Power Loss
Over Full Cycle (W)
Average On-State Current Over Full Cycle (A)
1.0
1.0 10 10
2
4
10
4
44 10
3
4
10
2
4
10
3
4
10
4
TJ = 125 °C
Sinusoidal Current Waveform
Controlled Rectier
Turned Fully On
Conduction Angle
Ø
+30°
+60°
+90°
+120°
+180°
DC
t - Square Wave Pulse Duration (s)
Z
thJC
-
Transient Thermal Impedance (°C/W)
Free Convection
Mounted on Innite Heatsink
and 4" x 4" x 1/16" Copper Fin
Forced Convection at 1000 LFM
Long Time Durations
Innite Heatsink
1.0 10 10
2
4
10
-2
44410
3
410
4
4
10
-1
10
-1
10
-5
10
-4
10
-3
44410
-2
410
-1
4
10
-6
4
1.0
4
10
-2
10
-1
4
1.0
4
10
1
Short Time Durations
VS-2N681, VS-2N5205 Series
Vishay Semiconductors
Fig. 3 - Maximum Low Level On-State Power Loss vs.
Current (Sinusoidal Current Waveform),
2N681 Series
10
Instantaneous Gate Voltage (V)
9
8
7
6
Area of Certain Triggering
5
Area of All Possible
4
Triggering Points
Maximum Allowable
Instantaneous Gate
Power Dissipation
5.0 W
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Gate Current (A)
Fig. 5 - Gate Characteristics,
2N681 Series
3
-65 °C
2
25 °C
Fig. 4 - Maximum High Level On-State Power Loss vs. Current
(Sinusoidal Current Waveform),
Revision: 18-Mar-14
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1
Gate Voltage (V)
125 °C
VGD (Max.) = 0.25 V
0
0 25 50 75 100 125
Gate Current (mA)
Fig. 5a - Area of All Possible Triggering Points vs. Temperature,
2N681 Series
2N681 Series
Fig. 6 - Maximum Transient Thermal Impedance, Junction to Case, vs. Pulse Duration,
2N681 Series
5
Document Number: 93706
Page 6
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Peak Half Sine Wave On-State Current (A)
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
0
50
100
150
02468
10 20 40 60
60 Hz
50 Hz
At Any Maximum Rated Load Condition
And With Rated V
RRM
Applied Following Surge
Average On-State Current Over Full Cycle (A)
Maximum Allowable Case Temperature (°C)
004 8 12 16 20 24 28 32 36 40
20
40
60
80
100
120
140
+30°
+60°
+90°
+120°
+180°
Conduction Period
Ø
Sinusoidal Current Waveform
T
J
= 125 °C
DC
Average On-State Current Over Full Cycle (A)
Maximum Allowable Case Temperature (°C)
004 8 12 16 20 24 28 32 36 40
20
40
60
80
100
120
140
Conduction Period
Rectangular Current
Waveform T
J
= 125 °C
Ø
+60°
+90°
+120°
+180°
DC
Fig. 7 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses,
2N681 Series
VS-2N681, VS-2N5205 Series
Vishay Semiconductors
90
Ø
= 125 °C
T
J
DC
80
+30°
70
+60°
60
+90°
+120°
50
+180°
40
30
Over Full Cycle (W)
20
10
Average Forward Power Loss
005 101520 25303540 4550
Controlled Rectier Turned Fully On
Conduction Angle
Sinusoidal Current Waveform
Average On-State Current Over Full Cycle (A)
Fig. 10 - Maximum Low-Level On-State Power Loss vs.
Average On-State Current (Sinusoidal Current Waveform),
2N5205 Series
Fig. 8 - Maximum Allowable Case Temperature vs. Average
On-State Current (Sinusoidal Current Waveform),
2N5205 Series
Fig. 9 - Maximum Allowable Case Temperature vs.
Average On-State Current (Rectangular Current Waveform),
Revision: 18-Mar-14
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2N5205 Series
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
10
5
2
10
Forward Power Loss
5
+30°
+60°
+90°
+120°
+180°
DC
+30°
+60°
+90°
Over Full Cycle (W)
2
-Average
F
I
Controlled Rectier
Turned Fully On
1.0
1.0 10 10
25 25 2510
Conduction Angle
Sinusoidal Current
Waveform
2
Average On-State Current Over Full Cycle (A)
Fig. 11 - Maximum High-Level On-State Power Loss vs.
Average On-State Current (Sinusoidal Current Waveform),
2N5205 Series
90
80
70
+60°
60
+90°
+120°
50
+180°
40
30
Over Full Cycle (W)
20
10
Average Forward Power Loss
0051015202530
Rectangular Current Waveform
Controlled Rectier Turned Fully On
Conduction Period
DC
Ø
= 125 °C
T
J
35 40 45 50
Average On-State Current Over Full Cycle (A)
Fig. 12 - Maximum Low-Level On-State Power Loss vs.
Average On-State Current (Rectangular Current Waveform),
2N5205 Series
6
Document Number: 93706
+120°
+180°
DC
TJ = 125 °C
Ø
4
10
5
2
3
10
5
2
2
10
3
Page 7
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Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
0
1234567
10
4
10
2
4
10
3
4
1.0
TJ = 125 °C
T
J
= 25 °C
t - Square Wave Pulse Duration (s)
Z
thJC
-
Transient Thermal Impedance (°C/W)
Long Time Durations
Steady State Value = 1.5 °C/W
1.0 10 10
2
10
-2
10
3
10
4
10
-1
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
-6
1.0
10
-2
10
-1
1.0
10
1
Short Time Durations
5
2
5
2
5
2
5
2
5
2
5
10
2
5252525252
5
2
5
2
5
2
5
2
5
2
VS-2N681, VS-2N5205 Series
Vishay Semiconductors
2
10
5
2
10
Forward Power Loss
5
+60°
+90°
+120°
+180°
DC
+60°
+90°
+120°
+180°
DC
10
5
2
10
5
Over Full Cycle (W)
2
-Average
F
I
Controlled Rectier
1.0
Turned Fully On
1.0 10 10
25 25 2510
Ø
Conduction Period
TJ = 125 °C
2
2
10
3
Average On-State Current Over Full Cycle (A)
Fig. 13 - Maximum High-Level On-State Power Loss vs.
Average On-State Current (Rectangular Current Waveform),
2N5205 Series
4
3
2
Fig. 14 - Maximum Instantaneous On-State Voltage vs.
Instantaneous On-State Current,
2N5205 Series
Dimensions www.vishay.com/doc?95333
Revision: 18-Mar-14
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Fig. 15 - Maximum Transient Thermal Resistance,
Junction to Case vs. Pulse Duration,
2N5205 Series
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
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