Datasheet VS-26MB40A, VS-36MB10A, VS-26MB10A, VS-26MB160A Specification

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D-34

PRODUCT SUMMARY

I

O

V

RRM

Package D-34

Circuit Single Phase Bridge

VS-MB High Voltage Series

Single Phase Bridge

(Power Modules), 25 A/35 A

FEATURES

• Universal, 3 way terminals:

push-on, wrap around or solder

• High thermal conductivity package, electrically
insulated case

• Center hole fixing

• Excellent power/volume ratio

• Nickel plated terminals solderable using lead (Pb)-free
solder; solder alloy Sn/Ag/Cu (SAC305); solder
temperature 260 °C to 275 °C

• UL E300359 approved

• Designed and qualified for industrial and consumer level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

25 A to 35 A

1400 V to 1600 V

DESCRIPTION

A range of extremely compact, encapsulated single phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and
instrumentation applications.

Vishay Semiconductors

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS

I

O

I

FSM

2

I

V

T

t

RRM

J

T

C

50 Hz 400 475

60 Hz 420 500

50 Hz 790 1130

60 Hz 725 1030

Range 1400 to 1600 V



ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM REPETITIVE

TYPE
NUMBER

26MB..A
36MB..A

VOLTAGE

CODE

140 1400 1500

160 1600 1700

RRM

PEAK REVERSE VOLTAGE

V

VALUES

26MB-A

25 35 A

70 55 °C

- 55 to 150 °C

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

VALUES

36MB-A

I

RRM

AT T

UNITS

A

A2s

MAXIMUM

MAXIMUM

J

mA

2

Revision: 10-Jul-13

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Document Number: 93564

VS-MB High Voltage Series

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FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum DC output current
at case temperature

Maximum peak, one cycle
non-repetitive forward current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t

Low level of threshold voltage V

High level of threshold voltage V

Low level forward slope resistance r

High level forward slope resistance r

Maximum forward voltage drop V

Maximum DC reverse current per diode I

RMS isolation voltage base plate V

I

O

I

FSM

F(TO)1

F(TO)2

t1

t2

FM

RRM

ISOL

Resistive or inductive load 25 35

Capacitive load 20 28

t = 10 ms

t = 8.3 ms 420 500

t = 10 ms

t = 8.3 ms 350 420

t = 10 ms

t = 8.3 ms 725 1030

t = 10 ms

t = 8.3 ms 512 730

2

t for time tx = I2t x tx;

I

0.1  t

 10 ms, V

x

(16.7 % x  x I
T

maximum

J

(I >  x I
(16.7 % x  x I

T

maximum

J

(I >  x I

No voltage
reapplied

100 % V
reapplied

RRM

No voltage
reapplied

100 % V
reapplied

RRM

< I <  x I

F(AV)

), TJ maximum 0.75 0.79

F(AV)

< I <  x I

F(AV)

), TJ maximum 6.4 5.2

F(AV)

RRM

= 0 V

F(AV)

F(AV)

), 

), 

TJ = 25 °C, IFM = 40 Apk (26MB)

T

= 25 °C, IFM = 55 Apk (36MB)

J

TJ = 25 °C, at V

RRM

f = 50 Hz, t = 1 s 2700 2700 V

Vishay Semiconductors

VALUES

26MB-A

400 475

335 400

Initial 
T

= TJ maximum

J

790 1130

560 800

5.6 11.3 kA

0.70 0.74

7.0 5.5

t

= 400 μs 1.25 1.3 V

p

VALUES

36MB-A

65 60 °C

10 10 µA

UNITS

A

A

A2s

2

s

V

m

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Junction and storage
temperature range

Maximum thermal resistance,
junction to case per bridge

Maximum thermal resistance,
case to heatsink

, T

T

J

Stg

R

thJC

R

thCS

Mounting surface, smooth, flat and greased 0.2

VALUES

26MB-A

1.7 1.35

Mounting torque ± 10 % Bridge to heatsink 2.0 Nm

Approximate weight 20 g

Revision: 10-Jul-13

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VALUES

36MB-A

- 55 to 150 °C

Document Number: 93564

UNITS

K/W

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Average Forward Current (A)

Maximum Allowable Case temperature (°C)

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

1

10

100

1000

0.5 1 1.5 2 2.5 3 3.5

26MB..A Series

Tj = 25°C

Tj = 150°C

50

150

250

350

450

0.01 0.1 1

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration.

26MB..A Series

Initial Tj = 150 ° C

No Voltage Reapplied

Rated Vrrm Reapplied

Peak Half Sine Wave Forward Current (A)

Pulse Train Duration (s)

150

VS-MB High Voltage Series

Vishay Semiconductors

130

26MB..A Series

110

180°

90

(Rect)

180°

70

(Sine)

50

0 5 10 15 20 25 30

Fig. 1 - Current Ratings Characteristics Fig. 2 - Forward Voltage Drop Characteristics

50

2 K/W

3 K/W

4 K/W

5 K/

7 K/W

RthSA = 1 K/W

- Delta R

W

26MB..A Series
Tj = 150°C

40

30

20

180°

(Sine)

180°

(Rect)

400

350

300

250

200

150

100

Peak Half Sine Wave Forward Current (A)

110100

Number of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current

10

0

Maximum Average Forward Power Loss (W)

0 5 10 15 20 25

Average Forward Current (A)

At Any Rated Load Condition And With

Rated Vrrm Applied Following Surge

Initial Tj = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

26MB..A series

10 K/W

0 25 50 75 100 125 150

Maximum Allowable Ambient Temperature (°C)

Fig. 3 - Total Power Loss Characteristics

Revision: 10-Jul-13

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0

Number of Equal Amplitude Half Cycle Current Pulses (N)

Peak Half Sine Wave Forward Current (A)

100

150

200

250

300

350

400

450

1 10 100

At Any Rated Load Condition And With

Rated Vrrm Applied Following Surge.

Initial Tj = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

36MB..A Series

Peak Half Sine Wave Forward Current (A)

Pulse Train Duration (s)

100

150

200

250

300

350

400

450

500

0.01 0.1 1

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration.

Initial Tj = 150°C

No Voltage Reapplied

Rated Vrrm Reapplied

36MB..A Series

VS-MB High Voltage Series

Vishay Semiconductors

150

1000

36MB..A Series

130

Tj = 150°C

100

110

180°

90

(Rect)

10

Tj = 25°C

180°

70

50

Maximum Allowable Case temperature (°C)

0 5 10 15 20 25 30 35 40

Average Forward Current (A)

(Sine)

Instantaneous Forward Current (A)

1

0.5 1 1.5 2 2.5 3 3.5

Instantaneous Forward Voltage (V)

36MB..A Series

Fig. 6 - Current Ratings Characteristics Fig. 7 - Forward Voltage Drop Characteristics

80

36MB..A Series
Tj = 150°C

60

40

20

180°

(Sine)

180°

(Rect)

RthSA = 0.7 K/W - Delta R

1 K/W

2 K/W

3 K/W

4 K/W

5 K/W

7 K/W

0

Maximum Average Forward Power Loss (W)

0 5 10 15 20 25 30

Revision: 10-Jul-13

Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current

For technical questions within your region: [e-mail]

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Average Forward Current (A)

Fig. 8 - Total Power Loss Characteristics

0 25 50 75 100 125 15

35

Maximum Allowable Ambient Temperature (°C)

4

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Document Number: 93564

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+

-

~

ORDERING INFORMATION TABLE

VS-MB High Voltage Series

Vishay Semiconductors

Device code

CIRCUIT CONFIGURATION

36VS- MB 160 A

1

1 - Vishay Semiconductors product

2 - Current rating code

3

- Circuit configuration:

MB = Single phase european coding

- Voltage code x 10 = V

4

- Diode bridge rectifier:

5

A = 26 MB, 36 MB series

32 4 5

RRM

26 = 25 A (average)
36 = 35 A (average)

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95326

Revision: 10-Jul-13

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Document Number: 93564

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

D-34

+ 1.0

21.5

- 0.5

+ 0.039

(0.85 )

- 0.020

9.5 ± 0.5

(0.37 ± 0.020)

Not to scale

0.8 ± 0.05

(0.03 ± 0.002)

-

~

5.25 ± 0.15

(0.21 ± 0.006)

6.35 ± 0.1

(0.25 ± 0.004)

10.5 ± 0.15

(0.41 ± 0.006)

20.3 ± 0.15

(0.80 ± 0.006)

~

28.5 ± 0.15

(1.12 ± 0.006)

12.7 ± 0.1

(0.5 ± 0.004)

+

12.7 ± 0.1

(0.5 ± 0.004)

28.5 ± 0.15

(1.12 ± 0.006)

200 N max; axially applied to fast-on terminals

Document Number: 95326 For technical questions, contact: [e-mail]
Revision: 07-Jul-08 1

Suggested plugging force:

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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12

1

Document Number: 91000

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