Datasheet VS-20UT04, VS-20WT04FN DataSheet (Vishay)

I-PAK (TO-251AA)

D-PAK (TO-252AA)

VS-20UT04 VS-20WT04FN

Base

cathode

Anode Anode

4, 2

3

1

Base

cathode

Anode Anode

4, 2

3

1

VS-20UT04, VS-20WT04FN

Vishay Semiconductors

High Performance Schottky Generation 5.0, 20 A

FEATURES

• 175 °C high performance Schottky diode

• Very low forward voltage drop

• Extremely low reverse leakage

• Optimized V

• Increased ruggedness for reverse avalanche capability

• RBSOA available

• Negligible switching losses

• Submicron trench technology

• Compliant to RoHS Directive 2002/95/EC

vs. IR trade off for high efficiency

F

PRODUCT SUMMARY

Package

I

F(AV)

V

R

at I

V

F

F

I

max. 7 mA at 125 °C

RM

T

max. 175 °C

J

Diode variation Single die

E

AS

Note

•V

measured at 125 °C, connecting 2 anode pins

F

D-PAK (TO-252AA),

I-PAK (TO-251AA)

20 A

45 V

0.53 V

108 mJ

APPLICATIONS

• Specific for PV cells bypass diode

• High efficiency SMPS

• High frequency switching

• Output rectification

• Reverse battery protection

• Freewheeling

• DC/DC systems

• Increased power density systems

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

V

V

T

RRM

F

J

20 Apk, TJ = 125 °C
(typical, measured connecting 2 anode pins)

Range - 55 to 175 °C

45 V

0.480 V

VOLTAGE RATINGS

PARAMETER SYMBOL TEST CONDITIONS

Maximum DC reverse voltage V

R

TJ = 25 °C 45 V

VS-20UT04

VS-20WT04FN

UNITS

Document Number: 94573 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 04-Jan-11 [email protected]

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VS-20UT04, VS-20WT04FN

Vishay Semiconductors

High Performance Schottky

Generation 5.0, 20 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

F(AV)

I

FSM

Non-repetitive avalanche energy E

Repetitive avalanche current I

AR

Note

(1)

Measured connecting 2 anode pins

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS

Forward voltage drop V

Reverse leakage current I

Junction capacitance C

Series inductance L

Maximum voltage rate of change dV/dt Rated V

Notes

(1)

Pulse width < 300 μs, duty cycle < 2 %

(2)

Only 1 anode pin connected

FM

RM

50 % duty cycle at TC = 153 °C, rectangular waveform 20 A

5 μs sine or 3 μs rect. pulse

Following any rated load

900

condition and with rated

10 ms sine or 6 ms rect. pulse 220

TJ = 25 °C, IAS = 7 A, L = 4.4 mH 108 mJ

AS

V

RRM

applied

Limited by frequency of operation and time pulse duration
so that T

10 A

20 A 0.570 0.610

(1)(2)

10 A

20 A 0.520 0.580

TJ = 25 °C

(1)

T

VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 1900 - pF

T

Measured lead to lead 5 mm from package body - - nH

S

< TJ max. IAS at TJ max. as a function of time pulse

J

T

= 25 °C

J

= 125 °C

T

J

V

= Rated VR

= 125 °C - 7 mA

J

R

R

(1)

I

AS

T

max.

J

0.505 0.540

0.415 0450

- 100 μA

- 10 000 V/μs

at

A

A

V

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and
storage temperature range

Maximum thermal resistance,
junction to case

Typical thermal resistance,
case to heatsink

Approximate weight

Marking device

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T

, T

J

Stg

R

DC operation 1.2

thJC

R

thCS

Case style I-PAK 20UT04

Case style D-PAK 20WT04FN

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- 55 to 175 °C

°C/W

0.3

2g

0.07 oz.

0.01

0.1

1

10

0.00001

94573_04

0.0001 0.001 0.01 0.1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

1

Single pulse

(thermal resistance)

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

VS-20UT04, VS-20WT04FN

High Performance Schottky

Vishay Semiconductors

Generation 5.0, 20 A

100

TJ = 175 °C

10

TJ = 25 °C

1

- Instantaneous Forward Current (A)

F

I

94573_01

0 0.2 0.4 0.8 1.20.6 1.0 1.4 1.6

VFM - Forward Voltage Drop (V)

TJ = 125 °C

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

10 000

100

TJ = 175 °C

10

1

0.1

0.01

- Reverse Current (mA)

R

0.001

I

0.0001

94573_02

TJ = 150 °C

0 5 10 15 3025 403520 45

VR - Reverse Voltage (V)

TJ = 125 °C

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

1000

- Junction Capacitance (pF)

T

C

100

01020 4030515 3525 45

94573_03

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

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Revision: 04-Jan-11 [email protected]

Fig. 4 - Maximum Thermal Impedance Z

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Characteristics

thJC

VS-20UT04, VS-20WT04FN

Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

201510525

30

0

160

180

120

140

150

170

130

94573_05

Square wave (D = 0.50)
80 % rated V

R

applied

See note (1)

DC

100

10 100

tp - Square Wave Pulse Duration (µs)

I

FSM

- Non-Repetitive Surge Current (A)

94573_07

1000 10 000

1000

Vishay Semiconductors

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

High Performance Schottky

Generation 5.0, 20 A

20

15

10

5

Average Power Loss (W)

0

0

94573_06

Fig. 6 - Forward Power Loss Characteristics

180°
120°

90°
60°
30°

DC

20 2515105

I

- Average Forward Current (A)

F(AV)

RMS limit

30

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V

REV

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Fig. 7 - Maximum Non-Repetitive Surge Current

) x R

REV

x VFM at (I

F(AV)

;

thJC

/D) (see fig. 6);

F(AV)

R

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VS-20UT04, VS-20WT04FN

1000

100

10

1

Avalanche Current (A)

0.1
110

94573_08

Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)

1000

High Performance Schottky

Generation 5.0, 20 A

TJ = 25 °C

TJ = 125 °C

TJ = 175 °C

Rectangular Pulse Duration (μs)

TJ = 25 °C

TJ = 125 °C

TJ = 175 °C

Vishay Semiconductors

100

Avalanche Energy (mJ)

94573_09

100

10

110

Rectangular Pulse Duration (μs)

Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)

100

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Revision: 04-Jan-11 [email protected]

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VS-20UT04, VS-20WT04FN

1 - Vishay Semiconductors product

2 - Current rating (20 A)

3

- Package:

U = I-PAK

W = D-PAK

4

- T = Trench

5 - Voltage code (45 V)

7

- D-PAK, I-PAK:

None = Tube (75 pieces)

D-PAK only:

TR = Tape and reel

TRL = Tape and reel (left oriented)

TRR = Tape and reel (right oriented)

6

- TO-252AA (D-PAK)

Device code

51 32 4 6 7

VS- 20 U T 04 FN TRL

Vishay Semiconductors

ORDERING INFORMATION TABLE

High Performance Schottky

Generation 5.0, 20 A

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95024

Part marking information www.vishay.com/doc?95025

Packaging information www.vishay.com/doc?95033

SPICE model www.vishay.com/doc?95027

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I-PAK - S, D-PAK

E

D

L5

L4

ee

A

c2

L

c

H

D1

123

4

b

b3

b2

b3

E1

DIMENSIONS FOR I-PAK - S in millimeters

Outline Dimensions

Vishay Semiconductors

SYMBOL

E 6.40 6.60 6.70

L 3.98 4.13 4.28

L4 0.66 0.76 0.86

L5 1.96 2.16 2.36

D 6.00 6.10 6.20

H 11.05 11.25 11.45

b 0.64 0.76 0.88

b2 0.77 0.84 1.14

b3 5.21 5.34 5.46

b4 0.41 0.51 0.61

e 2.286 BSC

A 2.20 2.30 2.38

c 0.40 0.50 0.60

c2 0.40 0.50 0.60

D1 5.30 - -

E1 4.40 - -

DIMENSIONAL REQUIREMENTS

MIN. NOM. MAX.

Document Number: 95024 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 05-Jan-11 [email protected]

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Outline Dimensions

Vishay Semiconductors

I-PAK - S, D-PAK

DIMENSIONS FOR D-PAK in millimeters and inches

(5)

(2) L5

Ø 2

(3)

3

A

L3 (3)

D (5)

b

0.010

Lead tip

0.010

B

L4

M

M

CAB

Detail “C”

CAB

Rotated 90 °CW

Ø 1

Detail “C”

Scale: 20:1

Gauge

plane

L2

E

b3

4

1

2

b2

e

2 x

A

Seating
plane

Ø

C

c2

c

C

C

L

A

H

A

(L1)

D1

A1

E1

3241

C

H

(7)

Seating

plane

0.488 (12.40)

0.409 (10.40)

0.06
MIN.

(1.524)

0.093 (2.38)

0.085 (2.18)

Pad layout

0.265
MIN.

(6.74)

0.245
(6.23)

0.089
(2.28)

MIN.

MIN.

SYMBOL

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC

A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410

b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070

b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.

b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC

c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3

c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040

D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2

D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10°

E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15°

E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension uncontrolled in L5

(3)

Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad

(4)

Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip

(5)

Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(6)

Dimension b1 and c1 applied to base metal only

(7)

Datum A and B to be determined at datum plane H

(8)

Outline conforms to JEDEC outline TO-252AA

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Disclaimer

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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