Datasheet VS-20MQ100NPbF DataSheet (Vishay)

Page 1
SMA
Schottky Rectifier, 2.1 A
Cathode Anode
VS-20MQ100NPbF
Vishay High Power Products
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
F(AV)
V
R
2.1 A
100 V
DESCRIPTION
The VS-20MQ100NPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 2.1 A
100 V
tp = 5 μs sine 120 A
2 Apk, TJ = 125 °C 0.72 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-20MQ100NPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current See fig. 4
Maximum peak one cycle non-repetitive surge current See fig. 6
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
AS
50 % duty cycle at TC = 113 °C, rectangular waveform On PC board 9 mm
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 30
TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ
2
island (0.013 mm thick copper pad area)
Following any rated load condition and with rated V
RRM
applied
2.1 A
120
A
0.5 A
Document Number: 94591 For technical questions, contact: diodestech@vishay.com Revision: 04-Mar-10 1
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Page 2
VS-20MQ100NPbF
Vishay High Power Products
Schottky Rectifier, 2.1 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
2 A
1.5 A 0.85
Maximum forward voltage drop See fig. 1
V
FM
1 A 0.78
(1)
2 A
1.5 A 0.68
1 A 0.63
Maximum reverse leakage current See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Typical junction capacitance C
Typical series inductance L
F(TO)
t
S
TJ = 25 °C
(1)
T
J
TJ = TJ maximum
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz 38 pF
T
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
= 25 °C
T
J
T
= 125 °C
J
V
= Rated V
= 125 °C 1
R
R
R
0.91
0.72
0.1
0.52 V
78.4 mΩ
10 000 V/μs
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to ambient
Approximate weight
Marking device Case style SMA (similar D-64) V2J
Note
dP
(1)
------------­dT
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------< R
thJA
(1)
, T
T
J
Stg
R
thJA
DC operation 80 °C/W
- 55 to 150 °C
0.07 g
0.002 oz.
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Document Number: 94591
2 Revision: 04-Mar-10
Page 3
VS-20MQ100NPbF
Schottky Rectifier, 2.1 A
10
F
T = 150°C
J
T = 125°C
J
1
Insta ntaneo us Forwa rd Curre nt - I (A )
0.1
0.4 0.6 0.8 1 1.2 1.4 1.6
Forw ard Vo ltage Drop - V (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
T = 25 ° C
J
FM
Vishay High Power Products
100
T
10
Junction Capacitance - C (pF)
1
020406080100
Fig. 3 - Typical Junction Capacitance vs.
160
150
140
130
120
110
100
Allowable case temperature (°C)
D = 0.20 D = 0.25 D = 0.33 D = 0.50
90
D = 0.75
Square wave (D=0.50)
80
rated Vr applied
70
see note (1)
60
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Average forward current- I
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
T = 25 ° C
J
Re ve r se V o l t a g e - V ( V )
R
Reverse Voltage
DC
F(AV)
(A)
1
T = 150°C
J
125°C
100°C
75°C
50°C
25°C
0
020406080100
Reve rse Volt age - V (V)
R
R
Re ve rse C urren t - I (mA)
0.0001
0.1
0.01
0.001
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
3
D = 0.20 D = 0.25
2.5
D = 0.33 D = 0.50 D = 0.75
2
1.5
RMS Limit
DC
1
Average power loss (Watts)
0.5
0
00.511.522.53
Average forward current- I
F(AV)
(A)
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I
x VFM at (I
F(AV)
REV
) x R
;
thJC
/D) (see fig. 6); Pd
F(AV)
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
R
Document Number: 94591 For technical questions, contact: diodestech@vishay.com
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Revision: 04-Mar-10 3
Page 4
VS-20MQ100NPbF
Vishay High Power Products
(A)
FSM
Non - Repetitive Surge Current - I
Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration
ORDERING INFORMATION TABLE
Device code
VS- 20 M Q 100 N TR PbF
Schottky Rectifier, 2.1 A
100
Tj = 25˚C
At Any Rated Load Condition And With Rated Vrrm Applied Following Surge
10
10 100 1000 10000
Square Wave Pulse Duration - tp (microsec)
51324678
1
- HPP product suffix
2 - Current rating
3 - M = SMA
4
- Q = Schottky “Q” series
5 - Voltage rating (100 = 100 V)
- N = New SMA
6
7 -
None = Box (1000 pieces)
TR = Tape and reel (7500 pieces)
- PbF = Lead (Pb)-free
8
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95018
Part marking information www.vishay.com/doc?95029
Packaging information
Tape and reel www.vishay.com/doc?95034
Bulk www.vishay.com/doc?95397
www.vishay.com For technical questions, contact: diodestech@vishay.com 4 Revision: 04-Mar-10
Document Number: 94591
Page 5
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay High Power Products
SMA
1.40 (0.055)
1.60 (0.062)
2.00 (0.078)
2.44 (0.096)
0.76 (0.030)
1.52 (0.060)
4.00 (0.157)
4.60 (0.181)
4.80 (0.188)
5.28 (0.208)
2.50 (0.098)
2.90 (0.114)
0.152 (0.006)
0.305 (0.012)
0.103 (0.004)
0.203 (0.008)
12
Polarity Part Number
1
1.47 MIN.
(0.058 MIN.)
1.27 MIN.
(0.050 MIN.)
2
2.10 MAX.
(0.085 MAX. )
5.53 (0.218)
Soldering pad
Document Number: 95018 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 25-Jun-07 For technical questions concerning module products, contact: ind-modules@vishay.com
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1
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Legal Disclaimer Notice
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