Datasheet VS-20L15TPbF, VS-20L15T-N3 DataSheet (Vishay)

Page 1
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TO-220AC
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
V
R
V
at I
F
F
I
max. 600 mA at 100 °C
RM
T
max. 125 °C
J
Diode variation Single die
E
AS
VS-20L15TPbF, VS-20L15T-N3
Schottky Rectifier, 20 A
FEATURES
Base
cathode
2
1
Cathode
20 A
15 V
See Electrical table
10 mJ
3
Anode
• 125 °C TJ operation (VR < 5 V)
• Single diode configuration
• Optimized for OR-ing applications
• Ultra low forward voltage drop
• Guard ring for enhanced ruggedness and long term reliability
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition (-N3 only)
DESCRIPTION
The Schottky rectifier module has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems.
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 20 A
15 V
tp = 5 μs sine 700 A
19 Apk, TJ = 125 °C (typical) 0.25 V
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-20L15TPbF VS-20L15T-N3 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
15 15 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current See fig. 5
Maximum peak one cycle non-repetitive surge current See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 85 °C, rectangular waveform 20
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 330
TJ = 25 °C, IAS = 2 A, L = 6 mH 10 mJ
AS
Current decaying linearly to zero in 1 μs Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load condition and with rated
applied
V
RRM
700
2A
A
Revision: 26-Aug-11
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 94165
Page 2
VS-20L15TPbF, VS-20L15T-N3
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
19 A
Forward voltage drop
See fig. 1
V
FM
40 A - 0.52
(1)
19 A
40 A 0.37 0.50
Reverse leakage current See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance C
Typical series inductance L
F(TO)
TJ = 25 °C
(1)
T
J
TJ = TJ max.
t
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C - 2000 pF
T
Measured lead to lead 5 mm from package body 8 - nH
S
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
= 100 °C - 600
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
Vishay Semiconductors
-0.41
0.25 0.33
-10
R
0.182 V
7.6 m
10 000 V/µs
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case
Typical thermal resistance, case to heatsink
Maximum thermal resistance, junction to ambient
R
R
R
J
Stg
thJC
thCS
thJA
DC operation See fig. 4
Mounting surface, smooth and greased (for TO-220)
DC operation
2
(for D
PAK)
Approximate weight
Mounting torque
minimum
maximum 12 (10)
Non-lubricated threads
Marking device Case style TO-220AC 20L15T
- 55 to 125
- 50 to 150
°C
1.5
0.50
°C/W
40
2g
0.07 oz.
6 (5)
kgf ·cm
(lbf · in)
Revision: 26-Aug-11
2
Document Number: 94165
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 3
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VR - Reverse Voltage (V)
I
R
- Reverse Current (mA)
0.1
1
10
100
1000
0
3691215
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10 000
1000
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
100
5
20
10
15
TJ = 25 °C
1000
100
Current (A)
10
- Instantaneous Forward
F
I
1
0 1.40.2 0.4 0.6 0.8 1.0 1.2 1.6
VFM - Forward Voltage Drop (V)
T
= 125 °C
J
= 75 °C
T
J
TJ = 25 °C
VS-20L15TPbF, VS-20L15T-N3
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Revision: 26-Aug-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1
P
DM
t
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single pulse
(thermal resistance)
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
Characteristics
thJC
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1
1/t2
thJC
3
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
t
2
.
+ T
C
Document Number: 94165
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I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
70
75
80
85
90
95
100
048 12 16 20 24
See note (1)
Square wave (D = 0.50)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
VS-20L15TPbF, VS-20L15T-N3
Vishay Semiconductors
14
D = 0.20 D = 0.25
12
D = 0.33 D = 0.50
10
D = 0.75
8
6
4
Average Power Loss (W)
2
0
0 5 10 15 20 25 30
I
- Average Forward Current (A)
F(AV)
Fig. 6 - Forward Power Loss Characteristics
DC
RMS limit
1000
Current (A)
- Non-Repetitive Surge
FSM
I
100
At any rated load condition and with rated V following surge
10
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
D.U.T.
Current monitor
100
L
IRFP460
R
= 25 Ω
g
RRM
applied
1000
High-speed
Freewheel
diode
40HFL40S02
switch
10 000
= 25 V
V
d
+
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
Revision: 26-Aug-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 8 - Unclamped Inductive Test Circuit
) x R
x VFM at (I
F(AV)
REV
;
thJC
/D) (see fig. 6);
F(AV)
R
4
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 94165
Page 5
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2 - Current rating (20 = 20 A)
3 - Schottky “L” series
4 - Voltage code (15 = 15 V)
5 - Package
T = TO-220
Device code
62 43 5
20 L 15 T PbFVS-
1
1
- Vishay Semiconductors product
6 -
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
Environmental digit
ORDERING INFORMATION TABLE
VS-20L15TPbF, VS-20L15T-N3
Vishay Semiconductors
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-20L15TPbF 50 1000 Antistatic plastic tube
VS-20L15T-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95221
Part marking information
TO-220AC PbF www.vishay.com/doc?95224
TO-220AC -N3 www.vishay.com/doc?95068
Revision: 26-Aug-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5
Document Number: 94165
Page 6
DIMENSIONS in millimeters and inches
(6)
E
(7)
E2
Q
(6)
D
D1
13
L3
L4
2
A
Ø P
0.014 AB
Detail B
L
MM
C
(6)
H1
(7)
TO-220AC
B
Seating
plane
A
A
A1
Outline Dimensions
Vishay Semiconductors
123
DL1D
H1
θ
E
Thermal pad
D2 (6)
E1 (6)
2 x b2 2 x b
Lead assignments
Diodes 1 + 2 - Cathode
3 - Anode
CC
Detail B
Lead tip
SYMBOL
e1
MM
0.015 AB
c
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A
A2
NOTES SYMBOL
View A - A
Conforms to JEDEC outline TO-220AC
MILLIMETERS INCHES
NOTES
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2
D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6 90° to 93° 90° to 93°
E 10.11 10.51 0.398 0.414 3, 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
(4)
Dimension b1, b3 and c1 apply to base metal only
(5)
Controlling dimension: inches
(6)
Thermal pad contour optional within dimensions E, H1, D2 and E1
(7)
Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8)
Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 07-Mar-11 [email protected]
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Disclaimer
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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